White-appearing semiconductor light-emitting devices having a temperature sensitive low-index particle layer
Systems for LED illumination products. Solutions to the problems attendant to delivering a white-appearing LED product without diminishing efficiency of white light generation are presented. Devices are designed and manufactured that include a specially-formulated off-state white-appearing layer to the LED apparatus. The composition of the specially-formulated off-state white-appearing layer is tuned for high-efficiency during the on-state.
1. A structure comprising:
a semiconductor light emitting device; a wavelength-converting layer disposed over the semiconductor light emitting device; and
a light-scattering layer disposed over the wavelength-converting layer, the light-scattering layer including a phase-changing material suspended in a binding material, the phase-changing material being arranged to transition from a solid phase into a liquid phase when the light-scattering layer is heated by the semiconductor light emitting device, the phase-changing material having a lower index of refraction in the liquid phase then in the solid phase.
2. The structure of claim 1 , wherein:
the light-scattering layer includes a concentration of scattering agents,
the binding material has a first index of refraction at a first temperature, and
the concentration of scattering agents having a second index of refraction at the first temperature, the second index of refraction being lower than the first index of refraction, and the first temperature being in a first range of about 0 degrees Celsius to about 45 degrees Celsius.
3. The structure of claim 2 , wherein the binding material has a third index of refraction at a second temperature, the third index of refraction being lower than the first index of refraction.
4. The structure of claim 3 , wherein the second temperature is in a second range of about 100 degrees Celsius to about 250 degrees Celsius.
5. The structure of claim 3 , wherein at least some of the scattering agents have a fourth index of refraction at the second temperature, the fourth index of refraction being lower than the second index of refraction.
6. The structure of claim 1 , wherein the phase-changing material exhibits a first index of refraction at a first temperature that is higher than a second index of refraction at a second temperature, the first temperature being in a first range of about 0 degrees Celsius to about 45 degrees Celsius, and the second temperature is in a second range of about 100 degrees Celsius to about 250 degrees Celsius.
7. The structure of claim 1 , further comprising a first reflective structure disposed adjacently to a first sidewall of the semiconductor light emitting device.
8. The structure of claim 7 , further comprising a second reflective structure disposed adjacently to a second sidewall of the semiconductor light emitting device.
9. The structure of claim 1 , further comprising a concentration of light absorbing particles embedded in the light-scattering layer.
10. The structure of claim 9 , wherein the light absorbing particles are black particles.
11. A method comprising:
providing a semiconductor light emitting device;
disposing a wavelength-converting layer over the semiconductor light emitting device; and
disposing a light-scattering layer over the wavelength-converting laver, the light-scattering layer including a phase-changing material suspended in a binding material, the phase-changing material being arranged to transition from a solid phase into a liquid phase when the light-scattering layer is heated by the semiconductor light emitting device, the phase-changing material having a lower index of refraction in the liquid phase then in the solid phase.
12. The method of claim 11 , wherein:
the light-scattering layer includes a concentration of scattering agents,
the binding material has a first index of refraction at a first temperature, and
the concentration of scattering agents having a second index of refraction at the first temperature, the second index of refraction being lower than the first index of refraction, and the first temperature being in a first range of about 0 degrees Celsius to about 45 degrees Celsius.
13. The method of claim 12 , wherein the binding material has a third index of refraction at a second temperature, the third index of refraction being lower than the first, index of refraction.
14. The method of claim 13 , wherein the second temperature is in a second range of about 100 degrees Celsius to about 250 degrees Celsius.
15. The method of claim 13 , wherein at least some of the scattering agents have a fourth index of refraction at the second temperature, the fourth index of refraction being lower than the second index of refraction.