IP Library Granted Patent US 10,193,051
Granted Patent B2
US 10,193,051 · App. 14/704,552 · Granted Jan 29, 2019

Acoustic wave device

Inventor: Jun Tsutsumi (Tokyo, JP)
Assignee: TAIYO YUDEN CO., LTD.
H01L41/047H03H9/02559H03H9/02992H03H9/14538H03H9/14544
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Quick Facts
Patent No.
US 10,193,051
App. No.
14/704,552
Granted
Jan 29, 2019
Kind
B2
Abstract

An acoustic wave device includes: an IDT provided on a piezoelectric substrate; and gratings provided on both sides of the IDT, wherein: a slowness surface of an acoustic wave has a concave shape; a duty ratio of electrode fingers of the gratings is larger than that of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is larger than that of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is larger than that of an added film provided on the electrode fingers of the IDT; a pitch of the electrode fingers of the gratings is smaller than that of the electrode fingers of the IDT; and a resonant frequency of the gratings is substantially the same as that of the IDT.

Claims (39)

1. An acoustic wave device comprising:

a piezoelectric substrate that is a rotated Y-cut LiTaO 3 substrate;

an Interdigital Transducer (IDT) that is provided on the piezoelectric substrate and excites an acoustic wave; and

gratings that are provided on both sides of the IDT in an aperture direction thereof,

wherein:

a duty ratio of electrode fingers of the gratings is larger than a duty ratio of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is larger than a thickness of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is larger than a thickness of an added film provided on the electrode fingers of the IDT;

a pitch of the electrode fingers of the gratings is smaller than a pitch of the electrode fingers of the IDT; and

a resonant frequency of the gratings is substantially the same as a resonant frequency of the IDT.

2. An acoustic wave device comprising:

a piezoelectric substrate that is a rotated Y-cut LiTaO 3 substrate;

an IDT that is provided on the piezoelectric substrate and excites an acoustic wave; and

gratings that are provided on both sides of the IDT in an aperture direction thereof,

wherein:

a duty ratio of electrode fingers of the gratings is larger than a duty ratio of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is larger than a thickness of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is larger than a thickness of an added film provided on the electrode fingers of the IDT;

a pitch of the electrode fingers of the gratings is smaller than a pitch of the electrode fingers of the IDT; and

the electrode fingers of the gratings and the electrode fingers of the IDT are connected to each other via bended regions.

3. An acoustic wave device comprising:

a piezoelectric substrate that is a rotated Y-cut LiTaO 3 substrate;

an IDT that is provided on the piezoelectric substrate and excites an acoustic wave; and

gratings that are provided on both sides of the IDT in an aperture direction thereof,

wherein:

a duty ratio of electrode fingers of the gratings is larger than a duty ratio of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is larger than a thickness of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is larger than a thickness of an added film provided on the electrode fingers of the IDT; and

the electrode fingers of the gratings are inclined with respect to the aperture direction.

4. An acoustic wave device comprising:

a piezoelectric substrate that is a rotated Y-cut LiNbO 3 substrate;

an IDT that is provided on the piezoelectric substrate and excites an acoustic wave; and

gratings that are provided on both sides of the IDT in an aperture direction thereof,

wherein:

a duty ratio of electrode fingers of the gratings is smaller than a duty ratio of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is smaller than a thickness of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is smaller than a thickness of an added film provided on the electrode fingers of the IDT;

a pitch of the electrode fingers of the gratings is larger than a pitch of the electrode fingers of the IDT; and

a resonant frequency of the gratings is substantially the same as a resonant frequency of the IDT.

5. An acoustic wave device comprising:

a piezoelectric substrate that is a rotated Y-cut LiNbO 3 substrate;

an IDT that is provided on the piezoelectric substrate and excites an acoustic wave; and

gratings that are provided on both sides of the IDT in an aperture direction thereof,

wherein:

a duty ratio of electrode fingers of the gratings is smaller than a duty ratio of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is smaller than a thickness of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is smaller than a thickness of an added film provided on the electrode fingers of the IDT;

a pitch of the electrode fingers of the gratings is larger than a pitch of the electrode fingers of the IDT; and

the electrode fingers of the gratings and the electrode fingers of the IDT are connected to each other via bended regions.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 5, 2015
From: TSUTSUMI, JUN
To: TAIYO YUDEN CO., LTD.
Reel/Frame 035568/0905 →
Priority Claims (1)
JP 2014-106794 · May 23, 2014 · national
Continuity (1)
Related Publication 20150340587A1 · Nov 26, 2015
Cited By (1)
US 12,218,649