Semiconductor devices having isolation insulating layers and methods of manufacturing the same

1. A method of manufacturing a semiconductor device, the method comprising:

forming a fin region protruding from a substrate and extending in a first direction, the fin region comprising opposing sidewalls that extend in the first direction;

forming an isolation insulating layer on the opposing sidewalls of the fin region, the isolation insulating layer exposing upper portions of the opposing sidewalls of the fin region;

after forming the isolation insulating layer, forming a discrete isolation insulating island in the fin region by oxidizing a portion of the fin region, thereby forming a first fin subregion and a second fin subregion separated from each other in the first direction by the discrete isolation insulating island, the isolation insulating layer exposing an upper portion of the discrete isolation insulating island; and

forming a gate extending on the discrete isolation insulating island in a second direction different from the first direction.

2. The method of claim 1 , wherein oxidizing the portion of the fin region comprises performing a plasma oxidation process or a thermal oxidation process.

3. The method of claim 1 , wherein oxidizing the portion of the fin region comprises implanting oxygen ions into the portion of the fin region and thermally treating the fin region.

4. The method of claim 1 , wherein the portion of the fin region comprises a first portion of the fin region, and

wherein the method further comprises injecting dopants into a second portion of the fin region underneath the discrete isolation insulating island to form a punch-through stop layer.

5. The method of claim 1 , wherein forming the gate comprises forming a first gate, a second gate and a third gate that extend in the second direction, and

wherein the first gate traverses the first fin subregion, the second gate traverses the second fin subregion, and the third gate extends on the discrete isolation insulating island.

6. The method of claim 5 , wherein oxidizing the portion of the fin region comprises:

forming a sacrificial gate dielectric layer on the fin region;

forming a first sacrificial gate and a second sacrificial gate spaced apart from each other on the sacrificial gate dielectric layer, the first and second sacrificial gates intersecting the fin region in the second direction;

forming a third sacrificial gate on the sacrificial gate dielectric layer, the third sacrificial gate intersecting the fin region between the first and second sacrificial gates in the second direction;

forming a gate spacer on a sidewall of each of the first, second and third sacrificial gates;

removing the third sacrificial gate and a portion of the sacrificial gate dielectric layer disposed under the third sacrificial gate to form a first groove exposing the portion of the fin region; and

oxidizing the portion of the fin region exposed by the first groove.

7. The method of claim 6 , wherein forming the first, second and third gates comprises:

removing the first sacrificial gate, the second sacrificial gate, and portions of the sacrificial gate dielectric layer disposed under the first and second sacrificial gates to form second grooves on the first and second fin subregions; and

forming a gate dielectric layer and a gate electrode in each of the first and second grooves to form the first gate and the second gate in respectively ones of the second grooves, and to form the third gate in the first groove,

wherein each of the first, second and third gates comprises the gate dielectric layer and the gate electrode.

8. The method of claim 5 , wherein oxidizing the portion of the fin region comprises:

forming a sacrificial gate dielectric layer on the fin region;

forming a first sacrificial gate and a second sacrificial gate spaced apart from each other on the sacrificial gate dielectric layer, the first and second sacrificial gates intersecting the fin region in the second direction;

forming a third sacrificial gate on the sacrificial gate dielectric layer, the third sacrificial gate intersecting the fin region between the first and second sacrificial gates in the second direction;

forming a gate spacer on a sidewall of each of the first, second and third sacrificial gates;

removing the third sacrificial gate and a portion of the sacrificial gate dielectric layer disposed under the third sacrificial gate to form a first groove exposing the portion of the fin region;

trimming the portion of the fin region exposed by the first groove; and

oxidizing the trimmed portion of the fin region exposed by the first groove.

9. The method of claim 5 , wherein oxidizing the portion of the fin region comprises:

forming a sacrificial gate dielectric layer on the fin region;

forming a first sacrificial gate and a second sacrificial gate spaced apart from each other on the sacrificial gate dielectric layer, the first and second sacrificial gates intersecting the fin region in the second direction;

forming a third sacrificial gate on the sacrificial gate dielectric layer, the third sacrificial gate intersecting the fin region between the first and second sacrificial gates in the second direction;

forming a gate spacer on a sidewall of each of the first, second and third sacrificial gates;

removing the third sacrificial gate and a portion of the sacrificial gate dielectric layer disposed under the third sacrificial gate to form a first groove exposing the portion of the fin region;

removing the portion of the fin region exposed by the first groove to form a recess region; and

oxidizing surfaces of the recess region.

10. The method of claim 9 , wherein the discrete isolation insulating island comprises an oxide layer having a U-shaped cross section.

11. The method of claim 9 , wherein the discrete isolation insulating island comprises a pair of oxide layers separated from each other in the first direction.

12. The method of claim 1 , wherein the gate is on opposing sidewalls of the upper portion of the discrete isolation insulating island.

13. A method of manufacturing a semiconductor device, the method comprising:

forming a fin region protruding from a surface of a substrate, the fin region comprising a first fin subregion and a second fin subregion spaced apart from each other in a first direction;

forming a first isolation insulating layer being in contact with sidewalls of the first and second fin subregions, which extend in the first direction, the first isolation insulating layer extending in the first direction;

forming a discrete isolation insulating island disposed between the first fin subregion and the second fin subregion, the discrete isolation insulating island separating the first fin subregion from the second fin subregion and comprising a lower surface facing the fin region, and the lower surface of the discrete isolation insulating island being at a level between a level of the surface of the substrate and a level of an upper surface of the first fin subregion;

forming a first gate intersecting the first fin subregion and extending in a second direction different from the first direction;

forming a second gate intersecting the second fin subregion and extending in the second direction; and

forming a third gate on a top surface and opposing sidewalls of the discrete isolation insulating island and extending in the second direction,

wherein each of the first to third gates comprises a gate dielectric layer and a gate electrode,

wherein the third gate intersects the first isolation insulating layer, and

wherein a bottom surface of the third gate disposed on the first isolation insulating layer is lower than a top surface of the first isolation insulating layer.

14. The method of claim 13 , further comprising:

forming first source/drain regions in the first fin subregion adjacent to sidewalls of the first gate, the first source/drain regions comprising one or more dopants of a first conductivity type; and

forming second source/drain regions in the second fin subregion adjacent to sidewalls of the second gate, the second source/drain regions comprising dopants of the first conductivity type.

15. The method of claim 14 , wherein the fin region further comprises a third fin subregion that is disposed underneath the discrete isolation insulating island, and

wherein the method further comprises forming a punch-through stop layer in the third fin subregion, the punch-through stop layer comprising dopants having a second conductivity type different from the first conductivity type.

16. The method of claim 14 , wherein at least one of the first and second source/drain regions includes an epitaxial layer.

17. The method of claim 13 , wherein the opposing sidewalls of the discrete isolation insulating island are parallel to the first direction and exposed by the fin region.

18. A method of manufacturing a semiconductor device, the method comprising:

forming a fin region extending in a first direction on a substrate;

forming gate spacers on the fin region, the gate spacers extending in a second direction different from the first direction and defining a groove that exposes a portion of the fin region;

forming a recess region in the fin region by removing the portion of the fin region exposed by the groove;

oxidizing surfaces of the recess region to form an oxide layer;

forming a filling insulation layer filling the recess region on the oxide layer to form an isolation insulating layer comprising the oxide layer and the filling insulation layer; and

forming a gate filling the groove on the filling insulation layer, the gate including a gate dielectric layer and a gate electrode.

19. The method of claim 18 , further comprising:

forming a punch-through stop layer including dopants in the fin region underneath the isolation insulating layer.