Semiconductor device and method of manufacturing semiconductor device
A semiconductor device is provided, the semiconductor device including a base layer of a first conductivity type having a MOS gate structure formed on a front surface side thereof, a collector layer of a second conductivity type formed on a rear surface side of the base layer, and into which a first dopant and a second dopant which is different from the first dopant are implanted, and a collector electrode formed on a rear surface side of the collector layer, wherein an impurity concentration peak of the second dopant is at a deeper position from the rear surface of the collector layer than an impurity concentration peak of the first dopant, and magnitude of the impurity concentration peak of the second dopant is larger than 1/100 of magnitude of the impurity concentration peak of the first dopant.
1. A manufacturing method, comprising:
forming a base layer of a first conductivity type having a MOS gate structure formed on a front surface side thereof;
forming, on a rear surface side of the base layer, a collector layer of a second conductivity type including a first dopant and a second dopant which is a different element from the first dopant, the first dopant and the second dopant both being second conductivity type impurities; and
forming a collector electrode on a rear surface side of the collector layer,
wherein an impurity concentration peak of the second dopant is at a deeper position from the rear surface of the collector layer than an impurity concentration peak of the first dopant, and magnitude of the impurity concentration peak of the second dopant is more than 1/100 of magnitude of the impurity concentration peak of the first dopant.
2. The manufacturing method according to claim 1 , wherein forming the collector layer comprises ion-implanting the first dopant and the second dopant with an energy density of 4.0 J/cm 2 or more.
3. The manufacturing method according to claim 1 , wherein forming the collector layer comprises:
ion-implanting the first dopant and the second dopant;
forming a protective film on the rear surface side of the collector layer; and
performing laser annealing from the rear surface side of the collector layer.
4. The manufacturing method according to claim 3 , wherein a wavelength of a laser used for the laser annealing is 800 nm or more.
5. The manufacturing method according to claim 1 , wherein the second dopant is aluminum, and the second dopant is ion-implanted at an accelerating voltage of 150 keV.
6. The manufacturing method according to claim 1 , wherein the second dopant is gallium, and the second dopant is ion-implanted at an accelerating voltage of 150 keV.
7. The manufacturing method according to claim 1 , wherein
forming the base layer of the first conductivity type having the MOS gate structure formed on the front surface side thereof includes thinning a base substrate to form the base layer before forming the MOS gate structure.
8. The manufacturing method according to claim 1 , further comprising
thinning the base layer having the MOS gate structure from the rear surface of the base layer.
9. The manufacturing method according to claim 1 , wherein
forming the collector layer includes forming the collector layer directly on the rear surface side of the base layer.