Semiconductor device

1. A semiconductor device comprising:

a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface;

a collector electrode formed over the second major surface;

a collector region formed with a first conductivity type in contact with the collector electrode, near the second major surface of the semiconductor substrate;

a drift region formed with a second conductivity type different from the first conductivity type, over the collector region;

a first gate electrode and a second gate electrode that are formed from the first major surface to the second major surface and are extended along a first direction of the first major surface in plan view;

a first body region formed with the first conductivity type between the first gate electrode and the second gate electrode;

an emitter region formed with the second conductivity type over the first body region;

a third gate electrode and a fourth gate electrode that are formed from the first major surface to the second major surface and are extended along the first direction in plan view;

a second body region formed with the first conductivity type between the third gate electrode and the fourth gate electrode and extended along the first direction;

an interlayer insulating film covering the first major surface; and

an emitter electrode that is formed over the interlayer insulating film, is coupled to the first body region and the emitter region via a first contact groove formed over the interlayer insulating film, and is coupled to a continuous portion of the second body region via a plurality of second contact grooves formed over the interlayer insulating film,

wherein the second contact grooves are shorter than the first contact groove in the first direction, and

wherein a number of the second contact grooves are greater than a number of the first contact groove in the first direction.

2. The semiconductor device according to claim 1 ,

wherein the first conductivity type is p-type, and

wherein the second conductivity type is n-type.

3. The semiconductor device according to claim 1 , further comprising a first coupling part and a second coupling part that couple the third gate electrode and the fourth gate electrode and are arranged next to each other in the first direction,

wherein the second contact grooves are arranged between the first coupling part and the second coupling part.

4. The semiconductor device according to claim 1 ,

wherein the first body region is continuously extended in the first direction,

wherein the emitter regions are spaced in the first direction, and

wherein the first body region arranged between the adjacent emitter regions is coupled to the emitter electrode via the first contact groove.

5. The semiconductor device according to claim 4 ,

wherein the first contact groove extends over the adjacent emitter regions in the first direction.

6. The semiconductor device according to claim 1 ,

wherein the third gate electrode is adjacent to the second gate electrode, and

wherein the semiconductor device further includes a floating region that is arranged with the first conductivity type between the second gate electrode and the third gate electrode so as to be deeper than the second gate electrode and the third gate electrode.

7. The semiconductor device according to claim 1 ,

wherein the third gate electrode and the fourth gate electrode are coupled to the emitter electrode.

8. The semiconductor device according to claim 1 ,

wherein a distance between the third gate electrode and the fourth gate electrode is smaller than a distance between the first gate electrode and the second gate electrode.

9. A semiconductor device comprising:

a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface;

a collector electrode formed over the second major surface;

a collector region formed with a first conductivity type in contact with the collector electrode, near the second major surface of the semiconductor substrate;

a drift region formed with a second conductivity type different from the first conductivity type, over the collector region;

a first gate electrode and a second gate electrode that are formed from the first major surface to the second major surface and are extended along a first direction of the first major surface in plan view;

a first body region formed with the first conductivity type between the first gate electrode and the second gate electrode;

an emitter region formed with the second conductivity type over the first body region;

a third gate electrode and a fourth gate electrode that are formed from the first major surface to the second major surface and are extended along the first direction of the first major surface in plan view;

a first coupling part, a second coupling part, and a third coupling part that are extended in a second direction intersecting the first direction and couple the third gate electrode and the fourth gate electrode;

a second body region formed with the first conductivity type between the first coupling part and the second coupling part and a floating region formed with the first conductivity type between the second coupling part and the third coupling part, between the third gate electrode and the fourth gate electrode,

an interlayer insulating film covering the first major surface; and

an emitter electrode that is formed over the interlayer insulating film, is coupled to the second body region via a first contact groove formed over the interlayer insulating film, and is coupled to the floating region via a second contact groove formed over the interlayer insulating film,

wherein the first contact groove is longer than the second contact groove in the first direction, and

wherein a number of the second contact grooves are greater than a number of the first contact groove in the first direction.

10. The semiconductor device according to claim 9 ,

wherein the floating region is coupled to the emitter electrode via the second contact groove and another second contact groove.

11. The semiconductor device according to claim 9 ,

wherein the emitter electrode is coupled to the first body region and the emitter region via a third contact groove formed over the interlayer insulating film.

12. The semiconductor device according to claim 11 ,

wherein the third contact groove is longer than the first contact groove in the first direction.

13. The semiconductor device according to claim 9 , further comprising a third electrode arranged around the emitter electrode on the first major surface,

wherein the first coupling part is closer to the third electrode than the second coupling part and the third coupling part.

14. The semiconductor device according to claim 13 ,

wherein the first gate electrode and the second gate electrode are coupled to the third electrode.

15. The semiconductor device according to claim 9 ,

wherein the third gate electrode and the fourth gate electrode are coupled to the emitter electrode.