Laser diode package
A laser package for use in a dermatological treatment device may include a conductive carrier, an insulation layer arranged over a first region of a first side of the conductive carrier, a semiconductor laser device mounted to a second region of the first side of the conductive carrier, and a conductive film secured to the semiconductor laser device and extending over at least a portion of the insulation layer, such that the conductive film is insulated from the conductive carrier by the insulation layer, and wherein a coefficient of thermal expansion of the semiconductor laser device differs from a coefficient of the conductive carrier to which it is mounted by more than 20%.
1. A dermatological treatment device, comprising:
a power supply; and
a laser package comprising:
an electrically conductive carrier having a first coefficient of thermal expansion;
an insulation layer arranged over a first region of a first side of the electrically conductive carrier;
a semiconductor laser device mounted to a second region of the first side of the electrically conductive carrier, the semiconductor laser device having a second coefficient of thermal expansion; and
an electrically conductive and physically continuous film including:
(a) a first planar surface region extending over a planar surface of the insulation layer opposite the electrically conductive carrier, such that the electrically conductive film is insulated from the electrically conductive carrier by the insulation layer; and
(b) a second planar surface region covering and secured directly to the semiconductor laser device;
such that the electrically conductive and physically continuous film extends in a continuous manner over both the insulation layer opposite the electrically conductive carrier and the semiconductor laser device;
wherein the first coefficient of thermal expansion exceeds the second coefficient of thermal expansion by more than 20%; and
wherein the semiconductor laser device is electrically coupled to the power supply via the electrically conductive carrier and the electrically conductive film.
2. The dermatological treatment device according to claim 1 , wherein the semiconductor laser device is mounted to the first side of the carrier by a solder having a melting temperature above 160° C.
3. The dermatological treatment device according to claim 1 , wherein the semiconductor laser device is mounted to the first side of the carrier by non-Indium solder.
4. The dermatological treatment device according to claim 1 , wherein the first coefficient of thermal expansion exceeds the second coefficient of thermal expansion by more than 100%.
5. The dermatological treatment device according to claim 1 , wherein:
the semiconductor laser device is secured to the first side of the electrically conductive carrier by a first solder material, and
the second planar surface region of the electrically conductive film extends over, and is secured directly to the semiconductor laser device by the first solder material, such that the semiconductor laser device is sandwiched between the electrically conductive film and the second planar surface region of the electrically conductive carrier.
6. The dermatological treatment device according to claim 5 , wherein:
the semiconductor laser device has an anode side and an opposing cathode side;
the anode side of the semiconductor laser device is mounted to the first side of the electrically conductive carrier; and
the second planar surface region of the electrically conductive film extends over, and is secured directly to, the cathode side of the semiconductor laser device.
7. The dermatological treatment device according to claim 1 , further comprising a printed circuit board;
wherein the power supply is electrically coupled to the semiconductor laser device via the printed circuit board;
wherein the printed circuit board is coupled to the semiconductor laser device for providing power to the semiconductor laser device via solder-free connection.
8. The dermatological treatment device according to claim 1 , further comprising:
control electronics coupled to the power supply and the laser package and configured to pulse the semiconductor laser device with a pulse duration of between 100 ms and 1000 ms.
9. The dermatological treatment device according to claim 1 , wherein the device is free of any lens downstream of the laser device.
10. The dermatological treatment device according to claim 1 , wherein the laser package includes exactly one electrically conductive film secured to the semiconductor laser device and having the planar surface extending over the planar surface of the insulation layer opposite the electrically conductive carrier.
11. The dermatological treatment device according to claim 1 , wherein the first planar surface region and the second planar surface region of the electrically conductive film are connected to each other by an intermediate planar surface region of the electrically conductive film and not by a wire bond.
12. The dermatological treatment device according to claim 1 , wherein the first planar surface region and the second planar surface region of the electrically conductive film lie in a common plane of the electrically conductive film.
13. A laser package for use in a dermatological treatment device, the laser package comprising:
an electrically conductive carrier having a first coefficient of thermal expansion;
an insulation layer arranged over a first region of a first side of the electrically conductive carrier;
a semiconductor laser device mounted to a second region of the first side of the electrically conductive carrier, the semiconductor laser device having a second coefficient of thermal expansion; and
an electrically conductive and physically continuous film secured to the semiconductor laser device and having a planar surface extending over a planar surface of the insulation layer opposite the electrically conductive carrier, such that the electrically conductive and physically continuous film is insulated from the electrically conductive carrier by the insulation layer;
wherein the semiconductor laser device is sandwiched between the electrically conductive and physically continuous film and the electrically conductive carrier, such that the electrically conductive and physically continuous film extends in a continuous manner over both the insulation layer opposite the electrically conductive carrier and the semiconductor laser device; and
wherein the first coefficient of thermal expansion exceeds the second coefficient of thermal expansion by more than 20%.
14. The laser package according to claim 13 , wherein the semiconductor laser device is mounted to the first side of the carrier by a solder having a melting temperature above 160° C.
15. The laser package according to claim 13 , wherein the semiconductor laser device is mounted to the first side of the carrier by non-Indium solder.
16. The laser package according to claim 13 , wherein the first coefficient of thermal expansion exceeds the second coefficient of thermal expansion by more than 100%.
17. The laser package according to claim 13 , wherein:
the semiconductor laser device is secured to the first side of the electrically conductive carrier by a first solder material, and
the electrically conductive film is secured to the semiconductor laser device by the first solder material.
18. The laser package according to claim 13 , wherein:
the semiconductor laser device has an anode side and an opposing cathode side;
the anode side of the semiconductor laser device is mounted to the first side of the electrically conductive carrier; and
the electrically conductive film is secured directly to the cathode side of the semiconductor laser device.
19. The laser package according to claim 13 , wherein the electrically conductive film includes:
a first portion extending over the insulation layer; and
a second portion extending over the semiconductor laser device.