Method for producing an antireflection layer on a silicone surface and optical element
A method for producing an antireflection layer on a silicone surface is described. The method includes application of an organic layer, production of a nanostructure in the organic layer by a plasma etching process, and application of at least one cover layer onto the nanostructure. An optical element can be produced by the method.
1. A method for producing an antireflection layer, the method comprising:
forming an adhesion layer having a thickness of less than 50 nm on a silicone surface;
forming an organic layer on the adhesion layer;
forming a first reflection-reducing nanostructure in the organic layer using a plasma etching process;
forming a cover layer over the nanostructure;
after forming the first nanostructure, forming a second organic layer over the first nanostructure; and
forming a second nanostructure in the second organic layer using a second plasma etching process.
2. The method according to claim 1 , wherein the organic layer is thermally stable up to a temperature of at least 150° C.
3. The method according to claim 1 , wherein the organic layer is formed by thermal evaporation.
4. The method according to claim 1 , further comprising pretreating the silicone surface by ion bombardment before forming the organic layer.
5. The method according to claim 1 , wherein the organic layer comprises a material selected from the group consisting of:
melamine (2,4,6-triamino-1,3,5-triazine),
MBP (5,5′-di(4-biphenylyl)-2,2′-bithiophene),
TPD (N,N′-bis(3-methylphenyl)-N,N′-diphenyl-benzidine),
NPB (N,N-di(naphth-1-yl)-N,N′-diphenyl-benzidine),
TPB (N,N,N′,N′-tetraphenylbenzidine),
TCTA (tris(4-carbazoyl-9-ylphenyl)amine),
B2TP (5,5′-di-(4-byphenylyl)-2,2′-bithiophene), and
parylene.
6. The method according to claim 1 , wherein the first or second nanostructure has a depth of at least 30 nm.
7. The method according to claim 1 , wherein the cover layer has a thickness of no more than 40 nm.
8. A method for producing an antireflection layer, the method comprising:
forming an organic layer over a silicone surface;
forming a reflection-reducing nanostructure in the organic layer using a plasma etching process;
applying a second organic layer on the nanostructure;
producing a second nanostructure in the second organic layer by using a second plasma etching process; and
forming a cover layer over the second nanostructure.
9. The method according to claim 8 , wherein the organic layer is thermally stable up to a temperature of at least 150° C.
10. The method according to claim 8 , wherein the organic layer is formed by thermal evaporation.
11. The method according to claim 8 , further comprising pretreating the silicone surface by ion bombardment before forming the organic layer.
12. The method according to claim 8 , wherein the organic layer comprises a material selected from the group consisting of:
melamine (2,4,6-triamino-1,3,5-triazine),
MBP (5,5′-di(4-biphenylyl)-2,2′-bithiophene),
TPD (N,N′-bis(3-methylphenyl)-N,N′-diphenyl-benzidine),
NPB (N,N-di(naphth-1-yl)-N,N′-diphenyl-benzidine),
TPB (N,N,N′,N′-tetraphenylbenzidine),
TCTA (tris(4-carbazoyl-9-ylphenyl)amine),
B2TP (5,5′-di-(4-byphenylyl)-2,2′-bithiophene), and
parylene.
13. The method according to claim 8 , wherein the cover layer has a thickness of no more than 40 nm.