Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
View Patent ↗A method for manufacturing a transistor with stable electric characteristics and little signal delay due to wiring resistance, used in a semiconductor device including an oxide semiconductor film. A semiconductor device including the transistor is provided. A high-performance display device including the transistor is provided.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film over the gate electrode with the gate insulating film interposed between the gate electrode and the oxide semiconductor film; and
forming a source electrode and a drain electrode over the oxide semiconductor film,
wherein the steps of forming the source electrode and the drain electrode comprise the steps of:
forming a first metal film;
forming a second metal film over the first metal film;
performing a first photolithography process on the second metal film and partly removing the second metal film by first etching;
forming a third metal film over the first metal film and the second metal film to cover the second metal film; and
performing a second photolithography process on the third metal film and partly removing the first metal film and the third metal film by second etching, and
wherein the second etching partly removes the first metal film and the third metal film at an outer side of end portions of the second metal film which is removed by the first etching.
2. The method for manufacturing a semiconductor device, according to claim 1 , further comprising the steps of:
forming a first insulating film over the source electrode and the drain electrode;
introducing oxygen into the first insulating film;
forming a second insulating film over the first insulating film;
forming an aluminum film over the second insulating film;
introducing oxygen into the aluminum film to form an aluminum oxide film; and
forming a planarization insulating film over the aluminum oxide film.
3. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein each of the first metal film and the third metal film is a metal film or a metal nitride film containing one or more elements selected from tungsten, tantalum, titanium, and molybdenum.
4. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second metal film contains a copper element.
5. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first etching is a wet etching method.
6. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second etching is a dry etching method.
7. The method for manufacturing a semiconductor device, according to claim 2 ,
wherein the step of introducing oxygen into the first insulating film is performed by plasma treatment using oxygen gas.
8. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film over the gate electrode with the gate insulating film interposed between the gate electrode and the oxide semiconductor film; and
forming a source electrode and a drain electrode over the oxide semiconductor film,
wherein the steps of forming the source electrode and the drain electrode comprise the steps of:
forming a first metal film;
forming a second metal film over the first metal film;
performing a first photolithography process on the second metal film and partly removing the second metal film by first etching;
forming a third metal film over the first metal film and the second metal film to cover the second metal film; and
performing a second photolithography process on the third metal film and partly removing the first metal film and the third metal film by second etching,
wherein an end portion of the first metal film and an end portion of the third metal film subjected to the second etching are extended to outside of an end portion of the second metal film subjected to the first etching,
wherein the end portion of the first metal film and the end portion of the third metal film subjected to the second etching are in contact with each other, and
wherein the second metal film includes copper.
9. The method for manufacturing a semiconductor device, according to claim 8 , further comprising the steps of:
forming a first insulating film over the source electrode and the drain electrode;
introducing oxygen into the first insulating film;
forming a second insulating film over the first insulating film;
forming an aluminum film over the second insulating film;
introducing oxygen into the aluminum film to form an aluminum oxide film; and
forming a planarization insulating film over the aluminum oxide film.
10. The method for manufacturing a semiconductor device, according to claim 8 ,
wherein each of the first metal film and the third metal film is a metal film or a metal nitride film containing one or more elements selected from tungsten, tantalum, titanium, and molybdenum.
11. The method for manufacturing a semiconductor device, according to claim 8 ,
wherein the first etching is a wet etching method.
12. The method for manufacturing a semiconductor device, according to claim 8 ,
wherein the second etching is a dry etching method.
13. The method for manufacturing a semiconductor device, according to claim 9 ,
wherein the step of introducing oxygen into the aluminum film is performed by plasma treatment using oxygen gas.
14. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film over the gate electrode with the gate insulating film interposed between the gate electrode and the oxide semiconductor film;
forming a source electrode and a drain electrode over the oxide semiconductor film;
forming a first insulating film over the oxide semiconductor film after forming the source electrode and the drain electrode; and
introducing oxygen into the first insulating film,
wherein the steps of forming the source electrode and the drain electrode comprise the steps of:
forming a first metal film;
forming a second metal film over the first metal film;
performing a first photolithography process on the second metal film and partly removing the second metal film by first etching;
forming a third metal film over the first metal film and the second metal film to cover the second metal film; and
performing a second photolithography process on the third metal film and partly removing the first metal film and the third metal film by second etching,
wherein an end portion of the first metal film and an end portion of the third metal film subjected to the second etching are extended to outside of an end portion of the second metal film subjected to the first etching,
wherein the end portion of the first metal film and the end portion of the third metal film subjected to the second etching are in contact with each other, and
wherein the second metal film includes copper.
15. The method for manufacturing a semiconductor device, according to claim 14 , further comprising the steps of:
forming a second insulating film over the first insulating film;
forming an aluminum film over the second insulating film;
introducing oxygen into the aluminum film to form an aluminum oxide film; and
forming a planarization insulating film over the aluminum oxide film.
16. The method for manufacturing a semiconductor device, according to claim 14 ,
wherein each of the first metal film and the third metal film is a metal film or a metal nitride film containing one or more elements selected from tungsten, tantalum, titanium, and molybdenum.
17. The method for manufacturing a semiconductor device, according to claim 14 ,
wherein the first etching is a wet etching method.
18. The method for manufacturing a semiconductor device, according to claim 14 ,
wherein the second etching is a dry etching method.
19. The method for manufacturing a semiconductor device, according to claim 14 ,
wherein the step of introducing oxygen into the first insulating film is performed by plasma treatment using oxygen gas.