Optoelectronic component and method for producing an optoelectronic component
An optoelectronic component, comprising an electrically conductive layer, an electrically insulating layer formed above a partial region of the electrically conductive layer, an electrically weakly conductive encapsulation layer formed outside the partial region on the electrically conductive layer and above the partial region on the electrically insulating layer, a first electrode formed above the partial region on the electrically weakly conductive encapsulation layer, an organic functional layer structure formed on the first electrode, and a second electrode formed above the partial region on the organic functional layer structure and where the second electrode is formed outside the partial region on the electrically weakly conductive encapsulation layer.
1. An optoelectronic component, comprising
an electrically conductive layer,
an electrically insulating layer formed above a partial region from the electrically conductive layer,
an electrically weakly conductive encapsulation layer formed outside the partial region on the electrically conductive layer and above the partial region on the electrically insulating layer,
a first electrode formed above the partial region on the electrically weakly conductive encapsulation layer,
an organic functional layer structure formed on the first electrode, and
a second electrode formed above the partial region on the organic functional layer structure and where the second electrode is formed outside the partial region on the electrically weakly conductive encapsulation layer.
2. The optoelectronic component as claimed in claim 1 , wherein the electrically weakly conductive encapsulation layer has a thickness in a range from 10 nm to 150 nm.
3. The optoelectronic component as claimed in claim 1 , wherein the electrically weakly conductive encapsulation layer has a resistivity in a range from 0.01 Ωm to 10 000 Ωm.
4. The optoelectronic component according to claim 1 , wherein a minimum distance from the first electrode to the second electrode or to the electrically conductive layer along the electrically weakly conductive encapsulation layer is in a range from 0.01 mm to 50 mm.
5. The optoelectronic component according to claim 1 , wherein
the electrically weakly conductive encapsulation layer above the partial region is formed in direct physical contact with the electrically insulating layer, and/or
the electrically weakly conductive encapsulation layer outside the partial region is formed in direct physical contact with the electrically conductive layer, and/or
the first electrode is formed in direct physical contact with the electrically weakly conductive encapsulation layer, and/or
the second electrode is formed in direct physical contact with the electrically weakly conductive encapsulation layer.
6. The optoelectronic component according to claim 1 , wherein the electrically weakly conductive encapsulation layer comprises or is formed from aluminum zinc oxide and/or doped aluminum zinc oxide.
7. The optoelectronic component according to claim 1 , wherein the electrically conductive layer is formed as a substrate or a carrier of the optoelectronic component.
8. A method for producing an optoelectronic component, wherein
an electrically conductive layer is provided,
an electrically insulating layer is formed above a partial region of the electrically conductive layer,
an electrically weakly conductive encapsulation layer is formed outside the partial region on the electrically conductive layer and above the partial region on the electrically insulating layer,
a first electrode is formed above the partial region on the electrically weakly conductive encapsulation layer,
an organic functional layer structure is formed on the first electrode, and
a second electrode is formed above the partial region on the organic functional layer structure and is formed outside the partial region on the electrically weakly conductive encapsulation layer.
9. The method as claimed in claim 8 , wherein the electrically weakly conductive encapsulation layer is formed in an ALD process.
10. The method as claimed in claim 8 , wherein the electrically weakly conductive encapsulation layer is formed with a thickness in a range from 1 nm to 1000 nm.
11. The method as claimed in claim 8 , wherein the electrically weakly conductive encapsulation layer has a resistivity in a range from 0.01 Ωm to 10 000 Ωm.
12. The method as claimed in claim 8 , wherein a minimum distance from the first electrode to the second electrode or to the electrically conductive layer along the electrically weakly conductive encapsulation layer is in a range from 0.01 mm to 50 mm.
13. The method as claimed in claim 8 , wherein
the electrically weakly conductive encapsulation layer above the partial region is formed in direct physical contact with the electrically insulating layer, and/or
the electrically weakly conductive encapsulation layer outside the partial region is formed in direct physical contact with the electrically conductive layer, and/or
the first electrode is formed in direct physical contact with the electrically weakly conductive encapsulation layer, and/or
the second electrode is formed in direct physical contact with the electrically weakly conductive encapsulation layer.
14. The method as claimed in claim 8 , wherein the electrically weakly conductive encapsulation layer comprises or is formed from aluminum zinc oxide and/or doped aluminum zinc oxide.
15. The method as claimed in claim 8 , wherein the electrically conductive layer is used as a substrate or a carrier of the optoelectronic component.