IP Library › Granted Patent US 10,257,921
Granted Patent B1
US 10,257,921 · App. 15/951,717 · Granted Apr 9, 2019

Embedded air gap transmission lines

Inventors: Richard Roy (Santa Clara, CA); Pierre-luc Cantin (Palo Alto, CA); Teckgyu Kang (Saratoga, CA); Woon Seong Kwon (Cupertino, CA)
Assignee: Google LLC
H05K1/024H01P3/08H05K2201/0715
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Quick Facts
Patent No.
US 10,257,921
App. No.
15/951,717
Granted
Apr 9, 2019
Kind
B1
Abstract

Embedded air gap transmission lines and methods of fabrication are provided. An apparatus having an air gap transmission line can include a first conductive plane, a core dielectric layer having a bottom surface in contact with the first conductive plane, a conductor having a bottom surface in contact with a top surface of the core dielectric layer, and a second conductive plane positioned over, and spaced apart from, a top surface of the conductor such that a gap separates the conductor from the second conductive plane. The top surface of the conductor is separated from the bottom surface of the second conductive plane by a first distance measured along an axis normal to the first conductive plane, and the bottom surface of the conductor is separated from the first conductive plane by a second distance greater than the first distance measured along the axis.

Claims (36)

1. An apparatus comprising:

a first conductive plane;

a core dielectric layer having a bottom surface in contact with the first conductive plane;

a conductor having a bottom surface in contact with a top surface of the core dielectric layer; and

a second conductive plane positioned over, and spaced apart from, a top surface of the conductor such that a gap separates the top surface of the conductor from a bottom surface of the second conductive plane, wherein:

the top surface of the conductor is separated from the bottom surface of the second conductive plane by a first distance measured along an axis normal to the first conductive plane, and

the bottom surface of the conductor is separated from the first conductive plane by a second distance that is at least twice as great as the first distance measured along the axis.

2. The apparatus of claim 1 , comprising:

a carrier frame positioned on the top surface of the core dielectric layer and supporting the second conductive plane over the core dielectric layer, wherein:

a thickness of the carrier frame measured along the axis is greater than a thickness of the conductor measured along the axis, and

the carrier frame is separated from the conductor in a direction parallel to the first conductive plane by a second gap.

3. The apparatus of claim 2 , wherein the gap is substantially evacuated.

4. The apparatus of claim 2 , wherein the gap contains a gas.

5. The apparatus of claim 1 , wherein the core dielectric layer is a first core dielectric layer, the apparatus comprising: a second core dielectric layer having a bottom surface in contact with the top surface of the first core dielectric layer, and a top surface in contact with the bottom surface of the second conductive plane, wherein the second core dielectric layer supports the second conductive plane over the core dielectric layer, and the second core dielectric layer defines a cavity over and around the conductor.

6. The apparatus of claim 5 , wherein:

a region of the second core dielectric layer between the second conductive plane and the conductor has a thickness less than one quarter of the first distance.

7. The apparatus of claim 5 , wherein the gap is substantially evacuated.

8. The apparatus of claim 5 , wherein the gap contains a gas.

9. A method of fabricating an apparatus comprising: providing a first conductive plane; providing a core dielectric layer having a bottom surface in contact with the first conductive plane; providing a conductor having a bottom surface in contact with a top surface of the core dielectric layer; and providing a second conductive plane positioned over, and spaced apart from, a top surface of the conductor such that a gap separates the top surface of the conductor from a bottom surface of the second conductive plane, wherein: the top surface of the conductor is separated from the bottom surface of the second conductive plane by a first distance measured along an axis normal to the first conductive plane, and the bottom surface of the conductor is separated from the first conductive plane by a second distance that is at least twice as great as the first distance measured along the axis.

10. The method of claim 9 , comprising:

providing a carrier frame positioned on the top surface of the core dielectric layer and supporting the second conductive plane over the core dielectric layer, wherein:

a thickness of the carrier frame measured along the axis is greater than a thickness of the conductor measured along the axis, and

the carrier frame is separated from the conductor in a direction parallel to the first conductive plane by a second gap.

11. The method of claim 10 , comprising:

substantially evacuating the gap.

12. The method of claim 10 , comprising:

filling the gap with a gas.

13. The method of claim 9 , wherein the core dielectric layer is a first core dielectric layer, the method comprising: providing a second core dielectric layer having a bottom surface in contact with the top surface of the first core dielectric layer, and a top surface in contact with the bottom surface of the second conductive plane, wherein the second core dielectric layer supports the second conductive plane over the core dielectric layer, and the second core dielectric layer defines a cavity over and around the conductor.

14. The method of claim 13 , wherein:

a region of the second core dielectric layer between the second conductive plane and the conductor has a thickness less than one quarter of the first distance.

15. The method of claim 13 , comprising:

substantially evacuating the gap.

16. The method of claim 13 , comprising:

filling the gap with a gas.

17. The apparatus of claim 1 , wherein substantially the entire bottom surface of the core dielectric layer is in contact with the first conductive plane.

18. The method of claim 9 , wherein substantially the entire bottom surface of the core dielectric layer is in contact with the first conductive plane.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2018
From: ROY, RICHARD; CANTIN, PIERRE-LUC; KANG, TECKGYU; KWON, WOON SEONG
To: GOOGLE LLC
Reel/Frame 046270/0478 →
Cited By (1)
US 12,684,704