Method of forming fine interconnection for semiconductor devices
The present disclosure provides a method of forming fine interconnection for semiconductor devices. The method includes the following steps: A substrate is provided. A first core layer is formed over the substrate. The first core layer includes a base portion, a plurality of extending line portions extending from the base portion along a first direction, and a plurality of isolated line portions isolated from the base portion. Subsequently, a spacer is formed on the sidewalls of the first core layer. A second core layer is then formed to over the substrate. The second core layer includes a plurality of surrounding line portions surrounding the plurality of isolated line portions, and includes a plurality of enclosed line portions enclosed by the plurality of extending line portions. The spacer is removed to form a plurality of openings between the first core layer and the second core layer. The first core layer and the second core layer are alternately arranged along a second direction perpendicular to the first direction after removing the spacer.
1. A method of forming fine interconnection for semiconductor devices, comprising:
providing a substrate;
forming a first core layer over the substrate, wherein the first core layer includes a base portion, a plurality of extending line portions extending from the base portion along a first direction, and a plurality of isolated line portions isolated from the base portion;
forming a spacer on the sidewalls of the first core layer;
to forming a second core layer over the substrate, wherein the second core layer includes a plurality of surrounding line portions surrounding the plurality of isolated line portions, and includes a plurality of enclosed line portions enclosed by the plurality of extending line portions; and
removing the spacer to form a plurality of openings between the first core layer and the second core layer, wherein the first core layer and the second core layer are alternately arranged along a second direction perpendicular to the first direction after removing the spacer.
2. The method of claim 1 , wherein the plurality of isolated line portions are separated from the plurality of extending line portions by the plurality of surrounding line portions.
3. The method of claim 1 , in a cross-sectional view taken along the second direction, the widths in the second direction of the plurality of isolated line portions, the plurality of extending line portions, the plurality of surrounding line portions, and the plurality of enclosed line portions are essentially identical.
4. The method of claim 1 , wherein the first core layer and the second core layer comprise the same material.
5. The method of claim 1 , wherein forming the spacer on the sidewalls of the first core layer further comprises:
forming the spacer over the first sacrificial layer; and
removing the top portions of the spacer while leaving the side portions of the spacer on the sidewalls of the first core layer.
6. The method of claim 1 , wherein forming the second core layer further comprises:
forming a second sacrificial layer on the substrate; and
removing the top portions of the second sacrificial layer to expose the first core layer and the spacer covering the sidewalls of the first core layer.
7. The method of claim 1 , wherein the first core layer includes another base portion, wherein the plurality of extending line portions are connected between the two base portions.
8. The method of claim 7 , wherein the plurality of isolated line portions are isolated from the another base portion.
9. The method of claim 1 , wherein forming the first core layer further comprises:
forming a first sacrificial layer over the substrate;
forming a patterned photoresist over the first sacrificial layer; and
etching the first sacrificial layer through the patterned photoresist to form the first core layer.
10. The method of claim 9 , wherein forming the first core layer further comprises:
performing a trimming step on the patterned photoresist before etching the first sacrificial layer.
11. The method of claim 1 , wherein the plurality of isolated line portions, the plurality of extending line portions, the plurality of surrounding line portions, and the plurality of enclosed line portions are spaced apart from each other by the plurality of openings.
12. The method of claim 11 , wherein in a cross-sectional view taken along the second direction, the plurality of surrounding line portions are on the two sides of the plurality of isolated line portions and are separated from them by the plurality of openings.
13. The method of claim 11 , wherein in a cross-sectional view taken along the second direction, the plurality of extending line portions are on the two sides of the plurality of enclosed line portions and are separated from them by the plurality of openings.
14. The method of claim 1 , wherein the substrate further comprises a hard mask formed thereon.
15. The method of claim 14 , further comprising:
etching the hard mask through the plurality of openings to form a plurality of combination line portions; and
separating the plurality of combination line portions into a plurality of fine interconnections.
16. The method of claim 15 , wherein the plurality of fine interconnections include metal pads.
17. The method of claim 15 , wherein separating the plurality of combination line portions into the plurality of fine interconnections further comprises:
stripping the hard mask away;
forming a third sacrificial layer over the substrate;
forming a positive photoresist over the third sacrificial layer; and
etching the third sacrificial layer through the positive photoresist to form the plurality of fine interconnections.
18. The method of claim 15 , in a cross-sectional view taken along the second direction, the widths in the second direction of the plurality of fine interconnections are essentially identical.