Bumped resonator structure
A technique relates a structure. An inductive element is on a first surface. A capacitive element is on the first surface and a second surface. An interconnect structure is between the first surface and the second surface.
1. A structure comprising:
an inductive element on a first surface of a substrate;
a capacitive element comprising a first capacitor pad and a second capacitor pad, the first capacitor pad being directly on the first surface of the substrate and the second capacitor pad being directly on a second surface; and
an interconnect structure between the first surface and the second surface, such that the first capacitor pad is directly opposite the second capacitor pad;
wherein the inductive element is distinct from the capacitive element.
2. The structure of claim 1 , wherein the capacitive element comprises the interconnect structure.
3. The structure of claim 1 , wherein the inductive element is selected from the group consisting of a spiral coil, a spiral-like coil, a meandering wire, a kinetic inductor, a Josephson junction, and a series array of Josephson junctions.
4. The structure of claim 1 , wherein the inductive element is shunted to ground.
5. The structure of claim 1 , wherein the capacitive element is selected from the group consisting of a plate capacitor and an interdigitated capacitor.
6. The structure of claim 1 , wherein the interconnect structure is a solder bump.
7. The structure of claim 1 , wherein the interconnect structure is a through-silicon via.
8. The structure of claim 1 , wherein at least one signal delivery line is coupled to the inductive element.
9. The structure of claim 1 , wherein at least one signal delivery line is coupled to the capacitive element.
10. The structure of claim 1 , wherein at least one superconducting qubit is coupled to the inductive element.
11. The structure of claim 1 , wherein at least one superconducting qubit is coupled to the capacitive element.
12. The structure of claim 1 , wherein the inductive element, the capacitive element, and the interconnect structure comprise a superconducting metal.
13. The structure of claim 1 , wherein at least a portion of the capacitive element and at least a portion of the interconnect structure are equipotential.
14. The structure of claim 1 , wherein the first surface opposes the second surface.
15. A method of forming a structure, the method comprising:
disposing an inductive element on a first surface of a substrate;
disposing a capacitive element comprising a first capacitor pad and a second capacitor pad, the first capacitor pad being directly on the first surface of the substrate and the second capacitor pad being directly on a second surface; and
coupling an interconnect structure between the first surface and the second surface, such that the first capacitor pad is directly opposite the second capacitor pad;
wherein the inductive element is distinct from the capacitive element.
16. The method of claim 15 , wherein the capacitive element comprises the interconnect structure.
17. The method of claim 15 , wherein the inductive element is selected from the group consisting of a spiral coil, a spiral-like coil, a meandering wire, a kinetic inductor, a Josephson junction, and a series array of Josephson junctions.
18. The method of claim 15 , wherein the inductive element is shunted to ground.
19. The method of claim 15 , wherein the capacitive element is selected from the group consisting of a plate capacitor and an interdigitated capacitor.
20. The method of claim 15 , wherein the interconnect structure is selected from the group consisting of a solder bump and a through-silicon via.
21. A structure comprising:
a capacitive element comprising a first portion directly on a first surface of a substrate and a second portion directly on a second surface, the first and second portions having an equipotential, wherein the first capacitor pad is directly opposite the second capacitor pad; and
an inductive element disposed on the first surface of the substrate and absent from the second surface;
wherein the inductive element is distinct from the capacitive element.
22. The structure of claim 21 , wherein an interconnect connects the first and second portions to have the equipotential.
23. A method of forming a structure, the method comprising:
providing a capacitive element comprising a first portion directly on a first surface of a substrate and a second portion directly on a second surface, the first and second portions having an equipotential, wherein the first capacitor pad is directly opposite the second capacitor pad; and
forming an inductive element on the first surface of the substrate and to be absent from the second surface.
24. The method of claim 23 , wherein an interconnect connects the first and second portions to have the equipotential.
25. A resonator comprising:
a capacitor comprising a first superconducting material directly on a first surface of a substrate and a second superconducting material directly on a second surface, such that the first and second superconducting materials are connected by a superconducting interconnect, the first and second superconducting materials on different surfaces; and
an inductor disposed on one of the different surfaces;
wherein the first superconducting material is directly opposite the second superconducting material; and
wherein the inductor is distinct from the capacitor.