Polishing composition for silicon wafer and polishing method
To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90−D50)/(D50−D10) and the polishing composition is used for final polishing in silicon wafer polishing.
1. A polishing composition comprising:
abrasives;
a water-soluble polymer;
a basic compound;
a chelating agent; and
water,
wherein, when a particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, a particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and a particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is 1.1 or more and less than 1.7,
A =( D 90− D 50)/( D 50− D 10) (Expression 1), and
the polishing composition is used for final polishing in silicon wafer polishing,
wherein a weight ratio of the abrasives, the water-soluble polymer, the basic compound, and the chelating agent is 50 to 95:1 to 20:1 to 30:1 to 10.
2. The polishing composition according to claim 1 , wherein a weight average molecular weight of the water-soluble polymer is 10,000 to 1,000,000.
3. The polishing composition according to claim 1 , wherein the chelating agent contains one or two or more substances selected from ethylenediaminetetrakis (methylenephosphonic acid) (EDTPO), triethylenetetraminehexaacetic acid (TTHA), and diethyltriaminepentaacetic acid (DTPA).
4. The polishing composition according to claim 1 , wherein the abrasives contain colloidal silica produced by a sol-gel method.
5. A polishing method comprising:
performing final polishing in silicon wafer polishing using the polishing composition according to claim 1 .
6. The polishing composition according to claim 1 , wherein a weight average molecular weight of the water-soluble polymer is 10,000 to 1,000,000.
7. The polishing composition according to claim 2 , wherein the chelating agent contains one or two or more substances selected from ethylenediaminetetrakis (methylenephosphonic acid) (EDTPO), triethylenetetraminehexaacetic acid (TTHA), and diethyltriaminepentaacetic acid (DTPA).
8. The polishing composition according to claim 2 , wherein the abrasives contain colloidal silica produced by a sol-gel method.
9. The polishing composition according to claim 3 , wherein the abrasives contain colloidal silica produced by a sol-gel method.
10. A polishing method comprising:
performing final polishing in silicon wafer polishing using the polishing composition according to claim 2 .
11. A polishing method comprising:
performing final polishing in silicon wafer polishing using the polishing composition according to claim 3 .
12. A polishing method comprising:
performing final polishing in silicon wafer polishing using the polishing composition according to claim 4 .