Active matrix substrate and method for manufacturing same, display device using active matrix substrate

1. An active matrix substrate comprising: a substrate, a plurality of pixel regions arranged on the substrate in a matrix pattern in a first direction and in a second direction; a plurality of gate lines extending in the first direction; and a plurality of source lines extending in the second direction, the active matrix substrate having a display area including the plurality of pixel regions and a non-display area located in a periphery of the display area, wherein:

each of the plurality of pixel regions includes:

a thin-film transistor supported on the substrate, the thin-film transistor including a gate electrode, a gate insulating layer covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer, and a source electrode and a drain electrode arranged so as to be in contact with the oxide semiconductor layer; and

a pixel electrode formed integral with the drain electrode;

the gate electrode is connected to one of the plurality of gate lines, and the source electrode is connected to one of the plurality of source lines;

the gate electrode and the plurality of gate lines are made of a first transparent conductive film;

the drain electrode and the pixel electrode are made of a second transparent conductive film; and

the active matrix substrate further includes:

a plurality of gate signal lines provided in the non-display area and made of a metal film; and

a first connecting portion that connects each of the plurality of gate lines to one of the plurality of gate signal lines.

2. The active matrix substrate according to claim 1 , further comprising an interlayer insulating layer covering the plurality of gate lines, wherein:

the plurality of gate signal lines are formed on the interlayer insulating layer; and

at the first connecting portion, the each of the plurality of gate lines is in contact with the one of the gate signal lines through an opening provided in the interlayer insulating layer.

3. The active matrix substrate according to claim 1 , wherein:

the source electrode and the plurarity of source lines are made of the second transparent conductive film; and

the active matrix substrate further comprises:

a plurality of source signal lines provided in the non-display area and made of a metal film; and

a second connecting portion that connects each of the plurality of source lines to one of the plurality of source signal lines.

4. The active matrix substrate according to claim 1 , wherein:

the source electrode is made of the second transparent conductive film; and

the plurality of source lines are made of a metal film.

5. The active matrix substrate according to claim 1 , wherein the source electrode and the plurality of source lines are made of a metal film.

6. The active matrix substrate according to claim 1 , wherein:

the each of the plurality of pixel regions includes a circuit including a further thin film transistor;

the further thin-film transistor includes:

a further gate electrode made of the first transparent conductive film;

the gate insulating layer extended so as to cover the further gate electrode;

a further oxide semiconductor layer formed on the gate insulating layer; and

a further source electrode and a further drain electrode arranged so as to be in contact with the further oxide semiconductor layer; and

at least one of the further source electrode and the further drain electrode is made of the second transparent conductive film.

7. The active matrix substrate according to claim 1 , further comprising a common electrode made of the first transparent conductive film,

wherein the common electrode overlaps with at least a portion of the pixel electrode with the gate insulating layer interposed therebetween.

8. The active matrix substrate according to claim 1 , wherein:

a transparent conductive layer including the drain electrode and the pixel electrode integrally made of the second transparent conductive film is separated for each of the pixel regions, the transparent conductive layer including a depressed portion in an edge thereof extending in the second direction; and

the depressed portion is arranged so as to overlap with the oxide semiconductor layer.

9. The active matrix substrate according to claim 1 , wherein the oxide semiconductor layer includes indium and tin.

10. The active matrix substrate according to claim 9 , wherein the oxide semiconductor layer includes an In—Sn—Zn—O-based semiconductor.

11. The active matrix substrate according to claim 1 , wherein the second transparent conductive film is indium-Zinc oxide.

12. A display device comprising:

the active matrix substrate according to claim 1 ;

a counter substrate arranged so as to oppose the active matrix substrate; and

a display medium layer provided between the active matrix substrate and the counter substrate.

13. The display device according to claim 12 , wherein:

at least one of the active matrix substrate and the counter substrate includes a black matrix;

when viewed in a direction normal to the substrate, the black matrix includes a first light-blocking portion extending in the first direction and a second light-blocking portion located so as to correspond to the source lines and extending in the second direction;

a width of the first light-blocking portion is smaller than a width of the gate lines; and

a width of the second light-blocking portion is greater than a width of the source lines.

14. The display device according to claim 13 , wherein: the first light-blocking portion and the gate line do not overlap with each other when viewed in a direction normal to the substrate.