Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
A hole supplier and p-contact structure for a light emitting device or a photodetector includes a p-type group III nitride structure and a hole supplier and p-contact layer made of Al-containing group III nitride formed on the p-type group III nitride structure and being under a biaxial in-plane tensile strain, the hole supplier and p-contact layer has a thickness in the range of 0.6-10 nm, and the p-type group III nitride structure is formed over an active region of the light emitting device or photodetector. A light emitting device and a photodetector with a hole supplier and p-contact structure.
1. A hole supplier and p-contact structure for a light emitting device or a photodetector, comprising:
a p-type group III nitride structure; and
a hole supplier and p-contact layer made of Al-containing group III nitride formed on the p-type group III nitride structure and being under a biaxial in-plane tensile strain,
wherein the hole supplier and p-contact layer has a thickness in the range of 0.6-10 nm, a room-temperature acceptor activation ratio of the hole supplier and p-contact layer is larger than 1%, and the p-type group III nitride structure is formed over an active region of the light emitting device or photodetector.
2. The hole supplier and p-contact structure according to claim 1 , wherein an acceptor activation energy of the hole supplier and p-contact layer is in the range of 0.1 to 0.5 eV, and a polarization induced electric field in the hole supplier and p-contact layer is in the range of 3×10 5 V/cm to 3×10 7 V/cm.
3. The hole supplier and p-contact structure according to claim 1 , wherein the hole supplier and p-contact layer is made of Al x Ga 1-x N with 0.7≤x≤1.
4. The hole supplier and p-contact structure according to claim 1 , wherein the hole supplier and p-contact layer is made of AlN and coherently formed on the p-type group III nitride structure.
5. The hole supplier and p-contact structure according to claim 1 , wherein the hole supplier and p-contact layer has an Al-composition higher than that of the p-type group III nitride structure.
6. The hole supplier and p-contact structure according to claim 1 , wherein the hole supplier and p-contact layer is doped with Mg in a concentration of 1.0×10 20 cm −3 to 1.0×10 21 cm −3 .
7. The hole supplier and p-contact structure according to claim 1 , wherein the hole supplier and p-contact layer can form an ohmic contact with a low-work-function metal.
8. The hole supplier and p-contact structure according to claim 1 , wherein the light emitting device is a light emitting diode, or a laser diode.
9. The hole supplier and p-contact structure according to claim 1 , wherein the hole supplier and p-contact layer is made of AlN and coherently formed on the p-type group III nitride structure.
10. A light emitting diode comprising:
an n-type AlGaN structure;
a p-type AlGaN structure;
a multiple quantum well active-region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure; and
a hole supplier and p-contact layer made of c-plane Al x Ga 1-x N with 0.7≤x≤1 and formed on the p-type AlGaN structure,
wherein the hole supplier and p-contact a layer has a higher Al-composition than that of the p-type AlGaN structure, the multiple quantum well active-region, and the n-type AlGaN structure, and is of a thickness from 0.6 nm to 10 nm.
11. The light emitting diode according to claim 10 , wherein the hole supplier and p-contact layer is doped with Mg in a concentration of 1.0×10 20 cm −3 to 1.0×10 21 cm −3 .
12. The light emitting diode according to claim 10 , wherein the p-type AlGaN structure comprises:
a hole injecting and electron blocking layer in contact with the multiple quantum well active-region;
a first channel layer formed on the hole injecting and electron blocking layer;
a p-type barrier formed on first channel layer; and
a second channel layer formed on p-type barrier,
wherein the hole supplier and p-contact layer is formed on the second channel layer.
13. The light emitting diode according to claim 12 , wherein the first and second channel layers are made of p-type Al y Ga 1-y N with 0≤y≤0.1, respectively, and is of a thickness in the range of 0.5-1.5 nm, respectively.
14. The light emitting diode according to claim 12 , wherein the p-type barrier is made of p-type AlN and is of a thickness in the range of 1-3 nm.
15. The light emitting diode according to claim 12 , wherein the p-type AlGaN structure comprises multiple pairs of the p-type barrier and the first channel layer alternately stacked.
16. The light emitting diode according to claim 12 , wherein the hole injecting and electron blocking layer is a p-type AlGaN layer, or a p-type AlGaN superlattice structure, or a p-type multilayer structure.
17. The light emitting diode according to claim 10 , further comprising a p-ohmic contact formed on the hole supplier and p-contact layer which forms ohmic contact with the hole supplier and p-contact layer.
18. The light emitting diode according to claim 17 , wherein the p-ohmic contact is made of a metal selected from Pd, Pt, Rh, and Os.
19. The light emitting diode according to claim 17 , further comprising a transparent dielectric layer formed on the hole supplier and p-contact layer side-by-side with the p-ohmic contact.
20. A UV photodetector comprising:
an n-type AlGaN structure;
a p-type AlGaN structure;
a light absorbing layer sandwiched between the n-type AlGaN structure and the p-type AlGaN structure; and
a hole supplier and p-contact layer made of Al-containing group III nitride formed on the p-type AlGaN structure,
wherein the hole supplier and p-contact layer is made of Al x Ga 1-x N with 0.7≤x≤1 and has a thickness from 0.6 nm to 10 nm.
21. A hole supplier and p-contact structure for a light emitting device or a photodetector, comprising:
a p-type group III nitride structure; and
a hole supplier and p-contact layer made of Al-containing group III nitride formed on the p-type group III nitride structure and being under a biaxial in-plane tensile strain,
wherein the hole supplier and p-contact layer has a thickness in the range of 0.6-10 nm, an acceptor activation energy of the hole supplier and p-contact layer is in the range of 0.1 to 0.5 eV, and a polarization induced electric field in the hole supplier and p-contact layer is in the range of 3×10 5 V/cm to 3×10 7 V/cm, and the p-type group III nitride structure is formed over an active region of the light emitting device or photodetector.
22. The hole supplier and p-contact structure according to claim 21 , wherein the hole supplier and p-contact layer is made of Al x Ga 1-x N with 0.7≤x≤1.
23. A hole supplier and p-contact structure for a light emitting device or a photodetector, comprising:
a p-type group III nitride structure; and
a hole supplier and p-contact layer made of Al x Ga 1-x N with 0.7≤x≤1 formed on the p-type group III nitride structure and being under a biaxial in-plane tensile strain,
wherein the hole supplier and p-contact layer has a thickness in the range of 0.6-10 nm, and the p-type group III nitride structure is formed over an active region of the light emitting device or photodetector.
24. A light emitting diode comprising:
an n-type AlGaN structure;
a p-type AlGaN structure;
a multiple quantum well active-region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure; and
a hole supplier and p-contact layer made of Al-containing group III nitride and formed on the p-type AlGaN structure,
wherein the hole supplier and p-contact layer has a higher Al-composition than that of the p-type AlGaN structure, the multiple quantum well active-region, and the n-type AlGaN structure, and is of a thickness from 0.6 nm to 10 nm,
wherein the p-type AlGaN structure comprises:
a hole injecting and electron blocking layer in contact with the multiple quantum well active-region;
a first channel layer formed on the hole injecting and electron blocking layer;
a p-type barrier formed on first channel layer; and
a second channel layer formed on p-type barrier, wherein the hole supplier and p-contact layer is formed on the second channel layer.
25. The light emitting diode according to claim 24 , wherein the first and second channel layers are made of p-type Al y Ga 1-y N with 0≤y≤0.1, respectively, and is of a thickness in the range of 0.5-1.5 nm, respectively.
26. The light emitting diode according to claim 24 , wherein the p-type barrier is made of p-type AlN and is of a thickness in the range of 1-3 nm.
27. A light emitting diode comprising:
an n-type AlGaN structure;
a p-type AlGaN structure;
a multiple quantum well active-region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure;
a hole supplier and p-contact layer made of Al-containing group III nitride and formed on the p-type AlGaN structure, wherein the hole supplier and p-contact layer has a higher Al-composition than that of the p-type AlGaN structure, the multiple quantum well active-region, and the n-type AlGaN structure, and is of a thickness from 0.6 nm to 10 nm;
a p-ohmic contact formed on the hole supplier and p-contact layer which forms ohmic contact with the hole supplier and p-contact layer; and
a transparent dielectric layer formed on the hole supplier and p-contact layer side-by-side with the p-ohmic contact.