Semiconductor device
A semiconductor device comprises: a substrate; a multi-layer semiconductor layer located on the substrate, the multi-layer semiconductor layer being divided into an active area and a passive area outside the active area; a gate electrode, a source electrode and a drain electrode all located on the multi-layer semiconductor layer and within the active area; and a heat dissipation layer covering at least one portion of the active area and containing a heat dissipation material. In embodiments of the present invention, a heat dissipation layer covering at least one portion of the active area is provided in the semiconductor device. The arrangement of the heat dissipation layer adds a heat dissipation approach for the semiconductor device in the planar direction, thus the heat dissipation effect of the semiconductor device is improved.
1. A semiconductor device, comprising:
a substrate;
a multi-layer semiconductor layer located on the substrate, the multi-layer semiconductor layer being divided into an active area and a passive area outside the active area;
a gate electrode, a source electrode and a drain electrode all located on the multi-layer semiconductor layer and within the active area;
a heat dissipation layer covering at least one portion of the active area and containing a first heat dissipation material which comprises three-layer boron nitride;
a first through hole provided at a side away from the heat dissipation layer, wherein the first through hole penetrates through the multi-layer semiconductor layer, and the first through hole, of which a wall is covered by a metal layer, is filled with material containing a second heat dissipation material which comprises boron nitride;
a first dielectric layer located at a side of the multi-layer semiconductor layer facing the heat dissipation layer, the first dielectric layer being formed at least on the multi-layer semiconductor layer between the gate electrode and the source electrode and between the gate electrode and the drain electrode; and
a second dielectric layer which is located between the first dielectric layer and the heat dissipation layer and covers the gate electrode.
2. The semiconductor device according to claim 1 , wherein the heat dissipation layer covers the gate electrode.
3. The semiconductor device according to claim 2 , wherein the heat dissipation layer further covers the source electrode and the drain electrode.
4. The semiconductor device according to claim 1 , wherein the heat dissipation layer covers entirety of the active area.
5. The semiconductor device according to claim 1 , wherein the heat dissipation layer further extends to the passive area.
6. The semiconductor device according to claim 1 , further comprising:
a first dielectric layer located at a side of the multi-layer semiconductor layer facing the heat dissipation layer, the first dielectric layer being formed at least on the multi-layer semiconductor layer between the gate electrode and the source electrode and between the gate electrode and the drain electrode.
7. The semiconductor device according to claim 6 , wherein the first dielectric layer further extends to the passive area.
8. The semiconductor device according to claim 1 , wherein the first through hole is located at a side of the source electrode away from the heat dissipation layer.
9. The semiconductor device according to claim 8 , further comprising:
a back metal layer located at a side of the substrate away from the multi-layer semiconductor layer.
10. The semiconductor device according to claim 9 , wherein the first through hole penetrates through the back metal layer, and the back metal layer covers a wall of the first through hole.
11. The semiconductor device according to claim 1 , further comprising:
a source electrode pad located within the passive area and electrically connected to the source electrode; and
a second through hole which is located at a side of the source electrode pad away from the heat dissipation layer, penetrates through the multi-layer semiconductor layer and the substrate, and is filled with a third heat dissipation material.
12. The semiconductor device according to claim 11 , wherein the third heat dissipation material comprises boron nitride.
13. The semiconductor device according to claim 1 , wherein the multi-layer semiconductor layer comprises:
a buffer layer located on the substrate; and
a barrier layer located on the buffer layer,
wherein the barrier layer and the buffer layer form a heterojunction structure, and the source electrode, the drain electrode and the gate electrode are all located on a surface of the barrier layer.
14. The semiconductor device according to claim 13 , further comprising a nucleation layer located between the substrate and the buffer layer.
15. The semiconductor device according to claim 13 , further comprising a capping layer located at a side of the barrier layer away from the substrate.