Display device
A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.
1. A display device, comprising:
a substrate comprising a pixel region and a driving circuit, wherein the pixel region is disposed adjacent to the driving circuit;
a metal oxide semiconductor transistor disposed over the substrate and comprising:
a metal oxide semiconductor layer,
a first gate electrode overlapping with the metal oxide semiconductor layer; and
a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap;
a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the first opening overlap; and
a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.
2. The display device as claimed in claim 1 , wherein the first opening further extends beyond the pixel region.
3. The display device as claimed in claim 2 , wherein the first opening is adjacent to the driving circuit.
4. The display device as claimed in claim 1 , further comprises a third insulating layer over the second insulating layer and in the second opening.
5. The display device as claimed in claim 4 , wherein the third insulating layer is in contact with a sidewall of the second opening.
6. The display device as claimed in claim 4 , wherein the third insulating layer is in contact with the substrate.
7. The display device as claimed in claim 1 , further comprising a thin film transistor adjacent to the first opening.
8. The display device as claimed in claim 7 , wherein the thin film transistor is a polysilicon transistor.
9. The display device as claimed in claim 8 , further comprising a second gate electrode overlapping with a polysilicon layer of the polysilicon transistor.
10. The display device as claimed in claim 9 , wherein the second gate electrode is disposed over the polysilicon layer.
11. The display device as claimed in claim 9 , wherein the polysilicon layer is disposed over the second gate electrode.
12. The display device as claimed in claim 1 , wherein the first gate electrode is disposed over the metal oxide semiconductor layer.
13. The display device as claimed in claim 1 , wherein the metal oxide semiconductor layer is disposed over the first gate electrode.
14. The display device as claimed in claim 1 , further comprising a source electrode and a drain electrode electrically connected to the metal oxide semiconductor layer.
15. The display device as claimed in claim 1 , further comprising a shielding layer, wherein the metal oxide semiconductor layer overlaps the shielding layer.
16. The display device as claimed in claim 1 , further comprising a display medium on the substrate.
17. The display device as claimed in claim 16 , wherein the display medium comprises organic light-emitting diode, micro light-emitting diode, or quantum dot.
18. The display device as claimed in claim 1 , being a flexible device.