Solar cell
A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.
1. A solar cell, comprising:
a silicon substrate having a first surface and a second surface opposite to each other;
an emitter disposed on the first surface;
a first electrode disposed on the emitter;
a doped region disposed in the second surface;
a passivation layer disposed on the second surface;
a doped polysilicon layer disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface;
a semiconductor layer disposed on the doped polysilicon layer and in the holes, wherein a band gap of the semiconductor layer is greater than a band gap of the silicon substrate, and a material of the semiconductor layer is doped silicon carbide; and
a second electrode disposed on the semiconductor layer.
2. The solar cell of claim 1 , wherein a thickness of the semiconductor layer is between 5 nm and 50 nm.
3. The solar cell of claim 1 , further comprising a transparent conductive layer disposed between the first electrode and the emitter.
4. The solar cell of claim 1 , further comprising a transparent conductive layer disposed between the second electrode and the semiconductor layer.
5. The solar cell of claim 1 , wherein a pore size of the holes does not exceed 200 μm.