IP Library Granted Patent US 10,312,902
Granted Patent B2
US 10,312,902 · App. 15/337,587 · Granted Jun 4, 2019

Low-area, low-power, power-on reset circuit

Inventors: Amit Kumar Singh (Bangalore, IN); Sriram Ganesan (Bangalore, IN)
Assignee: Analog Devices Global
H03K17/223H03K2217/0036
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,312,902
App. No.
15/337,587
Granted
Jun 4, 2019
Kind
B2
Abstract

This application discusses techniques for providing a power-on reset (POR) circuit. The techniques take advantage of the small size of active devices, consume very little current and can use a native NMOS transistor to provide a stable reference over temperature and voltage variations.

Claims (41)

1. A circuit for providing a power-on reset signal, the circuit comprising:

a first native NMOS transistor configured to generate a reference current indicative of a voltage threshold;

a comparator transistor having a control node coupled to the first native NMOS transistor, the comparator transistor configured to compare a sense current with the reference current, wherein the sense current is indicative of a level of a supply voltage of the circuit;

wherein a first node of the comparator transistor is configured to maintain a first state when the reference current is greater than the sense current;

wherein the first node is configured to maintain a second state when the sense current is greater than the reference current; and

a second transistor coupled in series with the first native NMOS transistor and a ground reference, the second transistor having a control node coupled to the supply voltage, the second transistor configured to control variations of the reference current set by the first native NMOS transistor.

2. The circuit of claim 1 , including a current mirror configured to mirror the reference current to the first node of the comparator transistor.

3. The circuit of claim 2 , wherein the current mirror includes a sense transistor and a mirror transistor; and

wherein the control node of the comparator transistor is coupled to a control node of the sense transistor and to a control node of the mirror transistor.

4. The circuit of claim 1 , wherein the second transistor is a a second native NMOS transistor.

5. The circuit of claim 4 , including a third native NMOS transistor coupled in series with the comparator transistor and the ground reference, the third native NMOS transistor having a control node coupled to the supply voltage.

6. The circuit of claim 5 , wherein the second native NMOS transistor includes a plurality of native NMOS transistors arranged in a stack.

7. The circuit of claim 5 , wherein the third native NMOS transistor includes multiple native NMOS transistors arranged in a stack.

8. The circuit of claim 5 , wherein the circuit occupies an area of less than 0.01 mm 2 .

9. The circuit of claim 5 , wherein the circuit is configured to use 42 nano-amperes (nA) or less on average.

10. The circuit of claim 5 , wherein the threshold voltage associated with the reference current is configured to vary less than 330 millivolts (mV) over a temperature range of −40° C. to 125° C.

11. A power-on reset circuit comprising:

a first native NMOS transistor configured to generate a reference current

a current mirror configured to mirror the reference current,

a comparator transistor configured to receive and compare the reference current with a sense current indicative of a supply voltage; and

second and third native NMOS transistors;

wherein a sense transistor of the current mirror is coupled to ground via the first native NMOS transistor and the second native NMOS transistor;

wherein a mirror transistor of the current mirror is coupled to ground via the comparator transistor and the third native NMOS transistor;

wherein a control node of the comparator transistor is coupled to a control node of the sense transistor and to a control node of the mirror transistor; and

wherein a node coupling the mirror transistor to the comparator transistor provides an output of the power-on reset circuit.

12. The power-on reset circuit of claim 11 , the power-on reset circuit occupies an area of less than 0.01 mm 2 .

13. The power-on reset circuit of claim 11 , including a buffer coupled to a drain of the comparator transistor and configured to provide a second output of the power-on reset circuit.

14. The power-on reset circuit of claim 13 , wherein the buffer includes an inverter.

15. A method for providing a power-on reset signal, the method comprising:

generating a reference current indicative of a voltage threshold using a first native NMOS transistor, wherein the generating the reference current includes setting a level of the reference current using a second transistor coupled between a second node of the first native NMOS transistor and the ground, wherein a control node of the second transistor is coupled to the supply voltage;

comparing the reference current to the sense current, the sense current indicative of a level of the supply voltage of a circuit responsive to the power-on reset signal;

setting an output of a comparison circuit to a first state if the reference current is greater than the sense current;

setting the output of the comparison circuit to a second state if the sense current is greater than the reference current.

16. The method of claim 15 , wherein the generating the reference current includes coupling a control node of the first native NMOS transistor to a ground.

17. The method of claim 15 , wherein the comparing the reference current to a sense current includes:

mirroring the reference current to a first node of a comparator transistor using a mirror transistor of a current mirror, the mirror transistor coupled between the comparator transistor and the supply voltage;

generating a control voltage from a node common to a sense transistor of the current mirror and to the first native NMOS transistor;

receiving the control voltage at a control node of the comparator transistor.

18. The method of claim 17 , wherein the comparing the reference current to a sense current includes generating the sense current at the comparator transistor using the control voltage.

19. The method of claim 15 , wherein the second transistor is a second native NMOS transistor.

20. The method of claim 19 , wherein the second native NMOS transistor includes a plurality of native NMOS transistor coupled in a stack configuration.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2022
From: ANALOG DEVICES GLOBAL UNLIMITED COMPANY
To: ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY
Reel/Frame 059106/0826 →
CHANGE OF NAME Recorded Feb 24, 2022
From: ANALOG DEVICES GLOBAL
To: ANALOG DEVICES GLOBAL UNLIMITED COMPANY
Reel/Frame 059095/0797 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2016
From: SINGH, AMIT KUMAR; GANESAN, SRIRAM
To: ANALOG DEVICES GLOBAL
Reel/Frame 040808/0694 →
Continuity (1)
Related Publication 20180123583A1 · May 3, 2018
Cited By (2)
US 12,278,623 US 12,489,440