Simple approach for preparing post-treatment-free solution processed non-stoichiometric niox nanoparticles as conductive hole transport materials
High-quality non-stoichiometric NiO x nanoparticles are synthesized by a facile chemical precipitation method. The NiO x film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiO x HTL. Better performance in NiO x based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiO x semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.
1. A method for preparing non-stoichiometric NiO x nanoparticles, with a composition of NiO (Ni 2+ ), NiOOH (Ni 3+ ), and Ni 2 O 3 (Ni 3+ ), wherein the method comprises:
using a base to react with Ni ions in water without added heat to form an electrically insulated and undispersed intermediate;
grinding the intermediate to form it into a uniform grain size;
combusting the intermediate in air at a temperature of 270° C. to cause oxygen to interact with a nickel-deficient lattice and further form non-stoichiometric NiO x nanoparticles.
2. The method of claim 1 , wherein the NiO x nanoparticles have dark-black color or atrous color.
3. The method of claim 1 , wherein the NiO x nanoparticles comprise vacancy-induced Ni 2+ and Ni 3+ composition.
4. The method of claim 1 , wherein the non-stoichiometric NiO x nanoparticles contain nickel oxyhydroxide (NiOOH) which have a plurality of hydroxyl groups.
5. The method of claim 1 , wherein the step of using a base to form undispersed intermediate involves use of a dispersing agent that is water/methanol, water/ethanol, or water/other alcoholic solvents.
6. The method of claim 1 wherein the step of combusting occurs for at least 2 hours.
7. The method of claim 1 wherein nanoparticle size is about 3-5 nm.