Structure and formation method of semiconductor device structure

1. A method comprising:

forming a first fin structure and a second fin structure over a semiconductor substrate;

forming a gate dielectric layer extending over the first fin structure and the second fin structure;

forming a metal containing barrier layer on the gate dielectric layer;

forming an opening in the gate dielectric layer and in the metal containing barrier layer;

forming an isolation element in the opening; and

forming a first gate electrode in contact with a first sidewall of the isolation element and a second gate electrode in contact with a second opposite sidewall of the isolation element, the isolation element electrically isolating the first gate electrode and the second gate electrode.

2. The method of claim 1 , further comprising:

partially etching the isolation element to modify a sidewall profile of the isolation element.

3. The method of claim 2 , wherein after the isolation element is partially etched, the sidewall profile of the isolation element is slanted such that a lower width of the isolation element is greater than an upper width of the isolation element.

4. The method of claim 2 , wherein after the isolation element is partially etched, sidewalls of the isolation element form an angle relative to a bottommost surface of the isolation element of from about 10 degrees to about 85 degrees.

5. The method of claim 2 , wherein partially etching the isolation element comprises:

etching the isolation element in a first etching process, etching conditions of the first etching process being varied during the first etching process.

6. The method of claim 1 , wherein the isolation element comprises one of silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, a polymer, or combinations thereof.

7. The method of claim 1 , wherein forming the first gate electrode and the second gate electrode comprises:

conformally depositing a first work function layer on the first sidewall of the isolation element and a second work function layer on the second opposite sidewall of the isolation element.

8. The method of claim 7 , wherein forming the first gate electrode and the second gate electrode further comprises:

depositing a first blocking layer over the first work function layer and a second blocking layer over the second work function layer, the first gate electrode being formed over the first blocking layer, the second gate electrode being formed over the second blocking layer; and

filling one or more metal layers over the first and second blocking layers.

9. The method of claim 8 , wherein the first work function layer and the second work function layer comprise one of hafnium, zirconium, titanium, tantalum, aluminum, a metal carbide, hafnium carbide, zirconium carbide, titanium carbide, aluminum carbide, aluminides, ruthenium, palladium, platinum, cobalt, nickel conductive metal oxides, or combinations thereof.

10. The method of claim 8 , wherein the metal layers comprise one of tungsten, aluminum, copper, cobalt, or combinations thereof.

11. A method comprising:

forming a first fin structure and a second fin structure over a semiconductor substrate;

depositing a gate dielectric layer over the first fin structure and the second fin structure;

depositing a barrier layer over the gate dielectric layer;

removing portions of the barrier layer and the gate dielectric layer to form an opening between the first fin structure and the second fin structure, a first portion of the gate dielectric layer remaining over the first fin structure, a second portion of the gate dielectric layer remaining over the second fin structure;

forming an isolation element in the opening;

removing a portion of the isolation element to form a modified isolation element; and

forming a first gate electrode over the first portion of the gate dielectric layer and a second gate electrode over the second portion of the gate dielectric layer.

12. The method of claim 11 , wherein the modified isolation element electrically isolates the first gate electrode and the second gate electrode.

13. The method of claim 11 , wherein removing the portion of the isolation element comprises:

etching the isolation element in a first etching process, etching conditions of the first etching process being varied during the first etching process, wherein after the first etching process a lower width of the modified isolation element is greater than an upper width of the modified isolation element.

14. The method of claim 13 , wherein after the modified isolation element is formed, sidewalls of the modified isolation element form an angle relative to a bottommost surface of the modified isolation element of from about 10 degrees to about 85 degrees.

15. The method of claim 11 , wherein the isolation element comprises one of silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, a polymer, or combinations thereof.

16. The method of claim 11 , wherein forming the first gate electrode and the second gate electrode comprises:

forming a work function layer over the barrier layer and the modified isolation element;

depositing a blocking layer over the work function layer;

forming a metal filling layer over the blocking layer; and

planarizing top surfaces of the metal filling layer, the blocking layer, the work function layer, and the modified isolation element, thereby forming the first gate electrode and the second gate electrode, the first gate electrode extending along a first sidewall of the modified isolation element, the second gate electrode extending along a second sidewall of the modified isolation element.

17. The method of claim 11 , further comprising:

forming an isolation feature between the first fin structure and the second fin structure, the opening exposing the isolation feature after the portions of the barrier layer and the gate dielectric layer are removed.

18. A method comprising:

forming a first fin structure and a second fin structure over a semiconductor substrate;

forming an isolation feature between the first fin structure and the second fin structure;

depositing a gate dielectric layer over the first fin structure, the second fin structure, and the isolation feature;

removing portions of the gate dielectric layer to form an opening exposing a portion of the isolation feature between the first fin structure and the second fin structure;

forming an isolation element in the opening;

removing a portion of the isolation element to form a modified isolation element; and

forming a first gate electrode in contact with a first sidewall of the modified isolation element and a second gate electrode in contact with a second sidewall of the modified isolation element, the modified isolation element electrically isolating the first gate electrode and the second gate electrode.

19. The method of claim 18 , wherein forming the first gate electrode and the second gate electrode comprises:

forming a work function layer over the gate dielectric layer and the modified isolation element;

depositing a blocking layer over the work function layer;

forming a metal filling layer over the blocking layer; and

planarizing top surfaces of the metal filling layer, the blocking layer, the work function layer, and the modified isolation element, thereby forming the first gate electrode over the first fin structure and the second gate electrode over the second fin structure.

20. The method of claim 18 , wherein removing the portion of the isolation element comprises:

etching the isolation element in a first etching process, etching conditions of the first etching process being varied during the first etching process, wherein after the first etching process a lower width of the modified isolation element is greater than an upper width of the modified isolation element.