Detection and/or prediction of plating events in an energy storage device
A system detects and/or predicts metal ion plating events of a metal ion energy storage device. The system includes an optical sensor disposed internally within or externally on a metal ion energy storage device wherein the optical sensor has an optical output that changes in response to strain within a metal ion energy storage device. A current sensor senses current through the metal ion energy storage device. Plating detection circuitry measures a wavelength shift in the optical output of the optical sensor and estimates a state of charge (SOC) of the metal ion energy storage device based on the current. An expected wavelength shift is determined from the estimated SOC. A plating event can be detected and/or predicted based on the difference between the expected wavelength shift and the measured wavelength shift.
1. A method, comprising:
measuring a wavelength shift in an output of an optical sensor disposed internally or externally within a metal ion energy storage device, the wavelength shift responsive to internal strain within the metal ion energy storage device;
estimating a state of charge (SOC) of the metal ion energy storage device;
determining an expected wavelength shift based on the estimated SOC;
determining a difference between the expected wavelength shift and the measured wavelength shift; and
detecting and/or predicting metal ion plating within the energy storage device based on the difference.
2. The method of claim 1 , wherein the wavelength shift is compensated for temperature based on an output of an internal temperature sensor.
3. The method of claim 1 , wherein the wavelength shift is compensated for temperature based on an output of an external temperature sensor and the current.
4. The method of claim 1 , further comprising developing a model relating the SOC of the metal ion energy storage device to the expected wavelength shift.
5. The method of claim 4 , wherein developing the model involves using machine learning mapping the SOC to a wavelength shift over multiple charge and discharge training cycles of the metal ion energy storage device.
6. The method of claim 5 , wherein correlating the SOC to the wavelength shift involves performing a polynomial fit of the SOC and the wavelength shift over the multiple training cycles.
7. The method of claim 1 , wherein detecting the metal ion plating comprises detecting or predicting the metal ion plating based on a function of the difference with respect to time.
8. The method of claim 7 , wherein the function is a moving average of the difference with respect to time.
9. The method of claim 7 , wherein the function is a derivative of the difference with respect to time.
10. The method of claim 1 , further comprising determining one or more state of health indicators of the metal ion energy storage device based on the metal ion plating.
11. The method of claim 10 , wherein the one or more state of health indicators comprises one or more of cycle life of the metal ion energy storage device, capacity of the metal ion energy storage device, and amount of active metal ions in the metal ion energy storage device.
12. The method of claim 1 , further comprising predicting one or more of end of life and remaining useful life of the metal ion energy storage device based on the metal ion plating.
13. A system, comprising:
an optical sensor disposed internally within or externally on a metal ion energy storage device, the optical sensor having an optical output that changes in response to strain within the metal ion energy storage device;
a current sensor configured to detect current through the metal ion energy storage device; and
plating detection circuitry configured to:
measure a wavelength shift in the optical output of the optical sensor;
estimate a state of charge (SOC) of the metal ion energy storage device based on the detected current;
determine an expected wavelength shift from the estimated SOC;
determine a difference between the expected wavelength shift and the measured wavelength shift; and
detect and/or predict metal ion plating within the metal ion energy storage device based on the difference.
14. The system of claim 13 , further comprising an internal temperature sensor disposed within the metal ion energy storage device and configured to measure internal temperature of the metal ion energy storage device, wherein the expected wavelength shift is compensated for the internal temperature.
15. The system of claim 13 , further comprising an external temperature sensor disposed outside the metal ion energy storage device and configured to measure external temperature of the metal ion energy storage device, wherein the expected wavelength shift is compensated for external temperature and current.
16. The system of claim 13 , wherein the current sensor is an electrical current sensor.
17. The system of claim 13 , wherein the current sensor is an optical current sensor.
18. The system of claim 13 , wherein the plating detection circuitry is configured to determine one or more state of health indicators of the metal ion energy storage device based on the metal ion plating.
19. The system of claim 18 , wherein the one or more state of health indicators comprises one or more of cycle life of the metal ion energy storage device, capacity of the metal ion energy storage device, amount of active metal ions in the metal ion energy storage device.
20. The system of claim 13 , wherein the plating detection circuitry is configured to predict one or more of end of life and remaining useful life of the metal ion energy storage device based on the metal ion plating.
21. The system of claim 13 , wherein the metal ion energy storage device is a lithium ion battery cell.
22. The system of claim 13 , wherein the metal ion energy storage device is a supercapacitor.