IP Library › Granted Patent US 10,348,263
Granted Patent B1
US 10,348,263 · App. 16/106,339 · Granted Jul 9, 2019

V-band digital control bandpass amplifier

Inventor: Kenneth Martin (Mississauga, CA)
Assignee: I-Q Analog Corporation
H03G3/3089H03F3/195H03F3/68H03G3/3063H03G3/3078H03F2200/165H03F2200/171H03F2200/267H03F2200/294H03F2200/301H03F2200/451H03H7/06H03M7/165
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Quick Facts
Patent No.
US 10,348,263
App. No.
16/106,339
Granted
Jul 9, 2019
Kind
B1
Abstract

A digitally controlled amplifier (DCA) has a drive (e.g., bipolar junction) transistor with a base to accept an input signal and a collector to supply an output signal. The DCA also includes n switchable gain amplifier networks (SGANs). Each SGAN has a signal input connected to the collector of the drive transistor, an input to accept a logic signal, and a signal output to supply a switchable gain AC output signal to a load in response to the logic signal. The SGAN signal outputs are connected together, typically in parallel, to supply a digitally controlled AC output gain. An auxiliary SGAN may be connected to supply a constant gain AC output signal. Each of the SGANs may have an identical switchable AC gain and accept an independent logic signal to supply (n+1) levels of digitally controlled AC output gain.

Claims (61)

1. A switchable gain amplifier network (SGAN) comprising:

a first transistor having a first terminal to accept an input alternating current (AC) signal, a second terminal to supply an AC output signal to a load, and a control terminal;

a second transistor having a first terminal connected to the first terminal of the first transistor, a second terminal to accept a direct current (DC) supply voltage, and a control terminal;

a first transmission gate having an input to accept a first bias voltage and an output connected to the control terminal of the first transistor, to supply the first bias voltage in response to receiving a logic signal; and,

a second transmission gate having an input to accept the a second bias voltage and an output connected to the control terminal of the second transistor, to supply the second bias voltage in response to receiving a complementary logic signal, opposite in polarity to the logic signal.

2. The SGAN of claim 1 further comprising:

a first bypass capacitor having a first terminal connected to the control terminal of the first transistor and a second terminal connected to a first reference voltage; and,

a second bypass capacitor having a first terminal connected to the control terminal of the second transistor and a second terminal connected to a second reference voltage.

3. The SGAN of claim 1 wherein the first transmission gate comprises:

a first n-channel metal-oxide-semiconductor field effect transistor (NMOS) having a first source/drain (S/D) accepting the first bias voltage, a second S/D connected to the control terminal of the first transistor, and a gate accepting a first binary logic signal;

a first p-channel metal-oxide-semiconductor field effect transistor (PMOS) having a first S/D accepting the first bias voltage, a second S/D connected to the control terminal of the first transistor, and a gate accepting a second binary logic signal, opposite in polarity to the first binary logic signal;

wherein the second transmission gate comprises:

a second NMOS having a first S/D accepting the second bias voltage, a second S/D connected to the control terminal of the second transistor, and a gate accepting the second binary logic signal; and,

a second PMOS having a first S/D accepting the second bias voltage, a second S/D connected to the control terminal of the second transistor, and a gate accepting the first binary logic signal.

4. The SGAN of claim 3 wherein the first NMOS and first PMOS are a first complementary MOS (CMOS) device; and,

wherein the second NMOS and second PMOS are a second CMOS device.

5. The SGAN of claim 1 wherein the first and second transistors are selected from the group consisting of bipolar junction transistors or field effect transistors.

6. A digitally controlled amplifier comprising:

a drive transistor with a control terminal to accept an input alternating current (AC) signal and a first terminal to supply a first stage AC output signal;

a plurality of switchable gain amplifier networks (SGANs), each SGAN having a signal input connected to the first terminal of the drive transistor, an input to accept a logic signal, and a signal output to supply a switchable gain AC output signal to a load in response to the logic signal;

wherein the plurality of SGAN signal outputs are connected together to supply a digitally controlled AC output gain;

wherein each SGAN comprises:

a first transistor having a first terminal to accept the first stage AC output signal, a second terminal to supply the switchable gain AC output signal, and a control terminal;

a second transistor having a first terminal connected to the first terminal of the first transistor, a second terminal to accept a direct current (DC) supply voltage, and a control terminal;

a first transmission gate having an input to accept a first bias voltage and an output connected to the control terminal of the first transistor, to supply the first bias voltage in response to receiving a logic signal; and,

a second transmission gate having an input to accept a second bias voltage and an output connected to the control terminal of the second transistor, to supply the second bias voltage in response to receiving a complementary logic signal, opposite in polarity to the logic signal.

7. The digitally controlled amplifier of claim 6 further comprising:

an auxiliary SGAN having a signal input connected to the first terminal of the drive transistor, an input to accept a non-varying enabling logic signal, and a signal output to supply a constant gain AC output signal, and wherein the auxiliary SGAN signal output is connected to the plurality of SGAN signal outputs.

8. The digitally controlled amplifier of claim 6 wherein the plurality of SGAN signal outputs are connected in parallel.

9. The digitally controlled amplifier of claim 8 wherein the plurality of SGANs equals n number of SGANs, with each SGAN having an identical switchable AC high-gain, with each SGAN accepting an independent logic signal, and wherein n is an integer greater than 1; and,

wherein the n SGAN signal outputs are summed together to supply (n+1) levels of digitally controlled AC output gain.

10. The digitally controlled amplifier of claim 6 wherein the drive transistor is a common emitter bipolar junction transistor (BJT) with a base control terminal, a collector first terminal, and an emitter connected to a reference voltage.

11. The digitally controlled amplifier of claim 6 wherein each SGAN further comprises:

a first bypass capacitor having a first terminal connected to the control terminal of the first transistor and a second terminal connected to a first reference voltage; and,

a second bypass capacitor having a first terminal connected to the control terminal of the second transistor and a second terminal connected to a second reference voltage.

12. The digitally controlled amplifier of claim 6 wherein the first transmission gate comprises:

a first n-channel metal-oxide-semiconductor field effect transistor (NMOS) having a first source/drain (S/D) accepting the first bias voltage, a second S/D connected to the control terminal of the first transistor, and a gate accepting a first binary logic signal;

a first p-channel metal-oxide-semiconductor field effect transistor (PMOS) having a first S/D accepting the first bias voltage, a second S/D connected to the control terminal of the first transistor, and a gate accepting a second binary logic signal, opposite in polarity to the first binary logic signal;

wherein the second transmission gate comprises:

a second NMOS having a first S/D accepting the second bias voltage, a second S/D connected to the control terminal of the second transistor, and a gate accepting the second binary logic signal; and,

a second PMOS having a first S/D accepting the second bias voltage, a second S/D connected to the control terminal of the second transistor, and a gate accepting the first binary logic signal.

13. The digitally controlled amplifier of claim 12 wherein the first NMOS and first PMOS are a first complementary MOS (CMOS) device; and,

wherein the second NMOS and second PMOS are a second CMOS device.

14. The digitally controlled amplifier of claim 6 wherein the first and second transistors are selected from the group consisting of bipolar junction transistors or field effect transistors.

15. The digitally controlled amplifier of claim 6 further comprising:

a digital-to-thermometer decoder having an input to accept a binary coded digital signal and outputs to supply thermometer coded logic signals for switching the AC gain of each SGAN.

16. A method for digitally controlling the gain of an amplifier network, the method comprising:

providing a switchable gain amplifier network (SGAN) comprising:

first and second transistors having connected first terminals to accept an input alternating current (AC) signal, control terminals to accept bias voltages, a first transistor second terminal to supply an AC output signal to a load, and a second transistor second terminal to accept a direct current (DC) supply voltage;

first and second transmission gates respectively connected to the first and second transistor control terminals;

in response to the first transmission gate accepting a logic signal, connecting an enabling bias voltage to the first transistor control terminal;

in response the second transmission gate accepting a complementary logic signal, connecting a disabling bias voltage to the second transistor control terminal; and,

the first transistor second terminal supplying a high-gain AC output signal.

17. The method of claim 16 further comprising:

in response to the first transmission gate accepting the complementary logic signal, connecting a disabling bias voltage to the first transistor control terminal;

in response to the second transmission gate simultaneously accepting the logic signal, connecting an enabling bias voltage to the second transistor control terminal; and,

the first transistor second terminal supplying a low-gain AC output signal, lower in gain than the high-gain AC output signal.

18. The method of claim 17 wherein providing the SGAN includes providing a plurality of n SGANs, where n is an integer greater than 1, with the n SGANs having their first terminals connected together, and with the n SGANs having their first transistor second terminals connected together;

wherein accepting the logic and complementary logic signals includes accepting an independent logic/complementary logic signal for each SGAN; and,

wherein supplying the high-gain and low-gain AC output signals includes supplying (n+1) levels of selectable AC output signal gain.

19. The method of claim 16 wherein accepting the logic and complementary logic signal includes converting a binary coded digital word to a thermometer code.

Assignments (4)
SECURITY INTEREST Recorded Dec 18, 2025
From: NEXT SEMICONDUCTOR TECHNOLOGIES, INC.
To: LUMINAR TECHNOLOGIES, INC.
Reel/Frame 074003/0870 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2025
From: AMERICAN RESEARCH CAPITAL, LLC
To: NEXT SEMICONDUCTOR TECHNOLOGIES, INC.
Reel/Frame 071501/0923 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2023
From: IQ-ANALOG CORPORATION
To: AMERICAN RESEARCH CAPITAL, LLC
Reel/Frame 065360/0388 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2018
From: MARTIN, KENNETH
To: IQ-ANALOG CORP.
Reel/Frame 046641/0474 →