Display device having double gate transistors
A display device is provided in which each subpixel includes a driving TFT, an organic light-emitting diode, and at least one switching TFT for driving the subpixel. At least one of the driving TFT and the switching TFT is formed as a double-gate TFT having a first gate node and a second gate node, and each subpixel comprises a compensation circuit that senses a threshold voltage of the double-gate TFT and applies the same to the first gate node or the second gate node of the double-gate TFT.
1. A display device in which each subpixel comprises a driving TFT, an organic light-emitting diode, and at least one switching TFT for driving the subpixel,
wherein at least one of the driving TFT and the switching TFT is formed as a double-gate TFT having a first gate node and a second gate node, and each subpixel comprises a compensation circuit that senses a threshold voltage of the double-gate TFT and applies the threshold voltage to the first gate node or the second gate node of the double-gate TFT,
wherein the compensation circuit comprises:
a first capacitor that stores the threshold voltage of the double-gate TFT;
a second capacitor that is connected to the first gate node or second gate node of the double-gate TFT and stores the threshold voltage of the double-gate TFT to apply the threshold voltage stored in the first capacitor to the first gate node or second gate node; and
a second switching TFT that turns on/off according to an external input signal, and that, when compensating the threshold voltage of the double-gate TFT, interconnects the first capacitor and the second capacitor to provide the threshold voltage stored in the first capacitor to the second capacitor.
2. The display device of claim 1 , wherein the second switching TFT disconnects the first capacitor and the second capacitor when the threshold voltage of the double-gate TFT is stored in the first capacitor.
3. The display device of claim 1 , wherein, among the at least one switching TFT for driving the subpixel, the first switching TFT is formed as an N-type oxide double-gate TFT, and the first switching TFT applies a data signal input through a data line to the gate of the driving TFT upon receipt of a first scan signal through the first gate node, and is connected to the second capacitor through the second gate node to receive the threshold voltage.
4. The display device of claim 1 , wherein the driving TFT is formed as an N-type oxide double gate TFT, and the driving TFT adjusts the amount of electrical current applied to the organic light-emitting diode upon receipt of a data signal through the first gate node, and is connected to the second capacitor through the second gate node to receive the threshold voltage.
5. The display device of claim 1 , wherein the double-gate TFT is formed as an oxide TFT.
6. The display device of claim 1 , wherein the double-gate TFT comprises two or more active regions,
wherein the two or more active regions are formed of at least one of oxide and LTPS.
7. The display device of claim 1 , wherein at least one of the driving TFT and the switching TFT is implemented as an N-type oxide TFT, and the at least one switching TFT for driving the subpixel is implemented as an N-type LTPS TFT, an N-type LTPS TFT, or a P-type LTPS TFT.
8. The display device of claim 1 , wherein the compensation circuit further comprises:
a third TFT for connecting an initial line to which a reset voltage is applied and the anode of the organic light-emitting diode in response to a second scan signal.
9. The display device of claim 1 , wherein the double-gate TFT has one of an etch stopper structure, an inverted coplanar structure, and a coplanar structure.
10. The display device of claim 1 , wherein the double-gate TFT comprises:
a bottom gate on a substrate;
an insulating film on the bottom gate and the substrate that insulates the substrate and the bottom gate;
a drain and a source on the insulating film;
an active layer on the insulating film and the drain and source;
a protection layer on the active layer;
another insulating layer on the protection layer and the drain and source; and
a top gate on the insulating film.
11. The display device of claim 1 , wherein the double-gate TFT comprises:
a buffer layer on a substrate;
a first active layer on the buffer layer and formed of LTPS or oxide;
a first insulating film on the buffer layer and the first active layer;
a bottom gate on the first insulating film;
a second insulating film on the first insulating film and the bottom gate;
a second active layer on the second insulating film formed of a different material than the first active layer;
a third insulating film on the second active layer and the second insulating film;
a drain and a source formed to be connected to the first active layer and the second active layer;
another insulating film on the third insulating film and the drain and source; and
a top gate on the another insulating film.
12. An electroluminescent display with an organic light-emitting diode in which each subpixel comprises:
a driving TFT that applies drive current to the organic light-emitting diode to cause the organic light-emitting diode to emit light;
a first switching TFT that is connected to a gate of the driving TFT and applies a data signal input through a data line to the gate; and
a plurality of switching TFTs that are for turning on/off the driving TFT,
wherein at least one of the driving TFT and the switching TFT is formed as a double-gate TFT having a first gate node and a second gate node, and each subpixel comprises a compensation circuit that senses the threshold voltage of the double-gate TFT and applies the same to the first gate node or second gate node of the double-gate TFT,
wherein the compensation circuit comprises:
a first capacitor that stores the threshold voltage of the double-gate TFT;
a second capacitor that is connected to the first gate node or second gate node of the double-gate TFT and stores the threshold voltage to apply the threshold voltage stored in the first capacitor to the connected gate node; and
a second switching TFT that turns on/off according to an external input signal, that disconnects the first capacitor and the second capacitor when the threshold voltage of the double-gate TFT is stored in the first capacitor, and that, when compensating the threshold voltage of the double-gate TFT, interconnects the first capacitor and the second capacitor to provide the threshold voltage stored in the first capacitor to the second capacitor.
13. The electroluminescent display of claim 12 , wherein the first switching TFT is formed as an N-type oxide double-gate TFT, and the first switching TFT applies a data signal input through a data line to a gate of the driving TFT upon receipt of a first scan signal through the first gate node, and is connected to the second capacitor through the second gate node to receive the threshold voltage.
14. The electroluminescent display of claim 12 , wherein the driving TFT is formed as an N-type oxide double gate TFT, and the driving TFT adjusts the amount of electrical current applied to the organic light-emitting diode upon receipt of a data signal through the first gate node, and is connected to the second capacitor through the second gate node to receive the threshold voltage.
15. The electroluminescent display of claim 12 , wherein the double-gate TFT is formed as an oxide TFT.
16. The electroluminescent display of claim 12 , wherein at least one of the driving TFT and the switching TFT is implemented as an N-type oxide TFT, and
the at least one switching TFT for driving the subpixel is implemented as an N-type LTPS TFT, an N-type LTPS TFT, or a P-type LTPS TFT.
17. The electroluminescent display of claim 12 , wherein the compensation circuit further comprises:
a third TFT for connecting an initial line to which a reset voltage is applied and the anode of the organic light-emitting diode in response to a second scan signal.
18. The electroluminescent display of claim 12 , wherein the double-gate TFT has one of an etch stopper structure, an inverted coplanar structure, and a coplanar structure.
19. The electroluminescent display of claim 12 , wherein the double-gate TFT comprises:
a bottom gate on a substrate;
an insulating film on the bottom gate and the substrate that insulates the substrate and the bottom gate;
a drain and a source on the insulating film;
an active layer on the insulating film and the drain and source;
a protection layer on the active layer;
another insulating layer on the protection layer and the drain and source; and
a top gate on the insulating film that adjusts the channel width of the active layer as the bottom gate.
20. The electroluminescent display of claim 12 , wherein the double-gate TFT comprises:
a buffer layer on a substrate;
a first active layer on the buffer layer formed of LTPS or oxide;
a first insulating film formed on the buffer layer and the first active layer;
a bottom gate on the first insulating film;
a second insulating film on the first insulating film and the bottom gate;
a second active layer on the second insulating film formed of a different material than the first active layer;
a third insulating film on the second active layer and the second insulating film;
a drain and a source formed to be connected to the first active layer and the second active layer;
another insulating film on the third insulating film and the drain and source; and
a top gate on the another insulating film that adjusts the channel width of the second active layer as the bottom gate.