IP Library Granted Patent US 10,367,128
Granted Patent B2
US 10,367,128 · App. 15/525,986 · Granted Jul 30, 2019

Pixel structure and method for the fabrication thereof

Inventors: Dongze Li (Guangdong, CN); Lixuan Chen (Guangdong, CN)
Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
H01L33/62H01L25/0753H01L33/60H01L2933/0058H01L2933/0066
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Quick Facts
Patent No.
US 10,367,128
App. No.
15/525,986
Granted
Jul 30, 2019
Kind
B2
Abstract

The present application discloses a pixel structure and method for the fabrication thereof including: providing a substrate; forming a black photoresist layer having a receiving cavity and an isolation region on the substrate; coating a polyelectrolyte solution on the surface of the black photoresist layer except the isolation region, and air-dried to form a polyelectrolyte layer; coating a metal nanoparticle solution on the surface of the polyelectrolyte layer, and air-dried to form a metal particle layer; and aligning and transferring a micro light emitting diodes to the black photoresist layer. In the above-described manner, the present disclosure can improve the light utilization efficiency of the micro light emitting diode.

Claims (11)

1. A method for fabricating a pixel structure for improving the utilization ratio of micro light emitting diodes, comprising:

providing a substrate;

forming a black photoresist layer having a receiving cavity and an isolation region on the substrate;

coating a polyelectrolyte solution on the surface of the black photoresist layer except the isolation region, and air-drying the polyelectrolyte solution to form a polyelectrolyte layer;

coating a metal nanoparticle solution on the surface of the polyelectrolyte layer, and air-drying the metal nanoparticle solution to form a metal nanoparticle layer; and

aligning and transferring a micro light emitting diodes to the isolation region of the black photoresist layer.

2. The method for fabricating the pixel structure according to claim 1 , wherein the black photoresist layer is formed by adapting photolithography process in one step.

3. The method for fabricating the pixel structure according to claim 1 , wherein the black photoresist layer is formed by adapting photolithography process in two step.

4. The method for fabricating the pixel structure according to claim 1 , wherein the polyelectrolyte layer and the metal nanoparticle layer are electrically opposite to each other.

5. The method for fabricating the pixel structure according to claim 1 , wherein the metal nanoparticle comprising at least one of Au, Ag, Cu, Ni, Co, Pt and/or an alloy formed by at least two of Au, Ag, Cu, Ni, Co and Pt.

6. The method for fabricating the pixel structure according to claim 1 , wherein the polyelectrolyte layer comprising at least one of Poly Dially Ammonium Chloride, Sodium Polyacrylate, Poly Dimethyl Dially Ammonium Chloride, and Acrylic AcidVinylpyridine Copolymer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 11, 2017
From: LI, DONGZE; CHEN, LIXUAN
To: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
Reel/Frame 042444/0662 →
Continuity (1)
Related Publication 20180315909A1 · Nov 1, 2018
Cited By (2)
US 12,336,340 US 12,376,440