Method for manufacturing secondary cell
A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to coat a coating liquid so as to form a coating film that includes constituents that will form the charging layer; a drying step to dry the coating liquid coated in the coating step; a UV irradiating step to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step with ultraviolet light; and a burning step to burn a plurality of the UV-irradiated coating films, after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the UV irradiating step.
1. A method for manufacturing a secondary cell having a charging layer that captures electrons as forming an energy level in a band gap by causing photoexcited structural change on an n-type metal oxide semiconductor covered with an insulating material, the method comprising steps of:
coating coating liquid to form a coating film that includes constituents to be the charging layer, the charging layer including the n-type metal oxide semiconductor and the insulating material;
drying to form a dried coating film by heating the coating liquid coated in the coating step;
irradiating to form a UV-irradiated coating film by irradiating the dried coating film with ultraviolet after the drying step in order to harden a surface of the coating film; and
burning to form a plurality of burned coating films by burning a plurality of the UV-irradiated coating films after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the irradiating step.
2. The method for manufacturing a secondary cell according to claim 1 , wherein the charging layer is formed without burning each of the UV-irradiated coating films while the plurality of UV-irradiated coating films is formed.
3. The method for manufacturing a secondary cell according to claim 1 , wherein a burning temperature in the burning step is higher than a drying temperature in the drying step.
4. The method for manufacturing a secondary cell according to claim 1 , wherein the charging layer is formed by irradiating the plurality of burned coating films with ultraviolet.
5. The method for manufacturing a secondary cell according to claim 1 , wherein the coating film includes aliphatic acid, and
wherein molecular binding of the aliphatic acid is disconnected by the burning step.