IP Library Granted Patent US 10,367,156
Granted Patent B2
US 10,367,156 · App. 16/045,842 · Granted Jul 30, 2019

Organic metal complex, and organic light emitting device and display apparatus using the same

Inventors: Jun Kamatani (Tokyo, JP); Masashi Hashimoto (Tokyo, JP); Satoshi Igawa (Fujisawa, JP); Shinjiro Okada (Kamakura, JP)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L51/0085C07C17/14C07C45/00C07F15/0033C09D11/50C09K11/02C09K11/06H01L51/006H01L51/0034H01L51/0072H05B33/14C09K2211/10C09K2211/1011C09K2211/1029C09K2211/185G09G3/3233H01L51/0058H01L51/5012H01L51/5016H01L51/56
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Quick Facts
Patent No.
US 10,367,156
App. No.
16/045,842
Granted
Jul 30, 2019
Kind
B2
Abstract

Provided is an organic metal complex having a structure represented by the following general formula (1): ML m L′ n   (1) where: M represents a metal atom selected from Ir, Pt, Rh, Os, and Zn; L and L′, which are different from each other, each represent a bidentate ligand; m represents an integer of 1 to 3 and n represents an integer of 0 to 2, provided that m+n is 3; a partial structure ML m represents a structure represented by the following general formula (2): and a partial structure ML′ n represents a structure including a monovalent bidentate ligand.

Claims (29)

1. A method of manufacturing a device, the method comprising:

preparing a substrate provided with one of an anode or a cathode;

forming an organic compound layer;

forming the other of the anode or the cathode;

wherein the organic compound layer comprises a metal complex having a structure represented by the following general formula (1):

ML m L′ n   (1)

wherein L and L′, which are different from each other, each represent a bidentate ligand;

wherein m represents an integer of 1 to 3 and n represents an integer of 0 to 2, provided that m+n is 3;

wherein M represents Ir;

wherein the partial structure ML m has a structure represented by the following general formula (8):

wherein the benzene ring with R 41 -R 44 attached thereto in the formula (8) is further represented by any one of the following formulae:

wherein *1 shows the connection to the Ir;

wherein *2 shows the connection to the benzo[f]isoquinoline ring represented in the formula (8);

wherein R 88 to R 102 , which may be identical to or different from each other, each represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted aralkyl group, an amino group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group;

wherein the partial structure ML′ n has a structure represented by any one of the following general formulae (10) to (12):

wherein R 45 to R 52 , which may be identical to or different from each other, each represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted aralkyl group, an amino group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group, and R 47 and R 48 may be bonded to form a benzene ring that is fused with the benzo[f]isoquinoline ring represented in the formula (8); and

wherein R 65 to R 79 , which may be identical to or different from each other, each represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, an alkoxy group, an aralkyl group, a substituted amino group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group, and adjacent substituents among R 65 to R 68 may be bonded to form a ring that is fused with the benzene ring represented in the formula (10), and adjacent substituents among R 77 to R 79 may be bonded to form a ring that is fused with the backbone represented in the formula (12).

2. The method according to claim 1 , wherein the organic compound layer is formed by a vacuum deposition method, ionization-assisted deposition method, a sputtering method, a plasma method, or a coating method.

3. The method according to claim 2 , wherein the coating method is an inkjet method.

4. The method according to claim 2 , wherein the coating method is performed with binder resin.

5. The method according to claim 1 , further comprising forming a transistor connected to the anode or the cathode.

6. The method according to claim 5 , wherein the formation of the anode includes a patterning process.

7. The method according to claim 6 , further comprising forming a protective layer disposed over the device.

8. The method according to claim 7 , further comprising forming a color filter disposed over the device.

9. The method according to claim 1 , further comprising preparing a substrate; and

forming a moistureproof layer over the substrate.

10. A method of manufacturing a display apparatus, the method comprising:

forming a plurality of devices,

wherein at least one of the devices is formed by the method according to claim 1 .

Assignments (1)
CHANGE OF NAME Recorded Jun 18, 2019
From: CANON KABUSHIKI KAISHA
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 049501/0097 →
Priority Claims (1)
JP 2007-290548 · Nov 8, 2007 · national
Continuity (3)
Continuation 15374364 · Dec 9, 2016
Continuation 12682628
Related Publication 20180342685A1 · Nov 29, 2018