Ultraviolet disinfection system
Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.
1. A structure comprising:
an enlongated chamber defined by at least one sidewall substantially parallel to a fluid flow;
a reflective first fluid permeable structure forming a first end wall of the chamber;
a reflective second fluid permeable structure forming an opposing second end wall of the chamber, with the at least one sidewall between the first fluid permeable structure and the second permeable structure; and
an ultraviolet (UV) source comprising a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range, wherein
the semiconductor device is positioned on the sidewall, wherein the semiconductor device is substantially flush with the sidewall or disposed at a lower elevation than the sidewall such that the semiconductor device does not extend into the chamber.
2. The structure of claim 1 wherein the first fluid permeable structure and the second fluid permeable structure comprise porous polytetrafluoroethylene.
3. The structure of claim 1 wherein the at least one sidewall comprises a photocatalytic material.
4. The structure of claim 1 wherein a cross section of the elongated enclosure is one of circular and hexagonal.
5. The structure of claim 1 wherein the first fluid permeable structure and the second fluid permeable structure comprise filters.
6. The structure of claim 1 wherein the first fluid permeable structure and the second fluid permeable structure comprise porous aluminum.
7. A structure comprising:
an elongated chamber defined by at least one sidewall substantially parallel to a fluid flow;
a reflective first fluid permeable structure forming a first end wall of the chamber;
a reflective second fluid permeable structure forming an opposing second end wall of the chamber, with the at least one sidewall between the first fluid permeable structure and the second permeable structure;
an ultraviolet (UV) source comprising a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range, wherein the semiconductor device is positioned on the sidewall and is substantially flush with the sidewall or disposed at a lower elevation than the sidewall such that the semiconductor device does not extend into the chamber; and
a photocatalytic material disposed in the chamber.
8. The structure of claim 7 wherein the first fluid permeable structure and the second fluid permeable structure comprise porous polytetrafluoroethylene.
9. The structure of claim 7 wherein the first fluid permeable structure and the second fluid permeable structure comprise porous aluminum.
10. The structure of claim 7 wherein the photocatalytic material is disposed on the sidewall.
11. The structure of claim 7 wherein a cross section of the chamber is hexagonal.
12. A structure comprising:
an elongated chamber defined by at least one sidewall substantially parallel to a fluid flow;
a reflective first fluid permeable structure forming a first end wall of the chamber;
a reflective second fluid permeable structure forming an opposing second end wall of the chamber, with the at least one sidewall between the first fluid permeable structure and the second permeable structure; and
an ultraviolet (UV) source comprising:
a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range; and
a dome lens disposed over the semiconductor device, wherein
the semiconductor device is positioned on the sidewall such that the dome lens protrudes through the sidewall.
13. The structure of claim 12 wherein the first fluid permeable structure is selected from the group consisting of porous polytetrafluoroethylene and porous aluminum.
14. The structure of claim 12 wherein the at least one sidewall comprises a photocatalytic material.
15. The structure of claim 12 wherein the first fluid permeable structure is a filter.
16. The structure of claim 12 wherein the dome lens is quartz.
17. The structure of claim 12 further comprising a sealing material disposed around the dome lens.
18. The structure of claim 1 further comprising a transparent structure disposed over the semiconductor device, wherein the transparent structure is a portion of the sidewall of the chamber.
19. The structure of claim 18 wherein the transparent structure is quartz.