Ultraviolet disinfection system
Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.
1. A structure comprising:
an elongated chamber for holding a fluid, the chamber having a sidewall generally parallel with a flow of the fluid through the chamber;
a ultraviolet light emitting diode (UVLED) disposed along the sidewall of the chamber, the UVLED comprising a semiconductor device comprising an active layer that emits radiation having a peak wavelength in an ultraviolet range disposed between an n-type region and a p-type region; and
an optic disposed over a major surface of the UVLED such that the optic is in contact with the fluid, wherein the optic comprises a lens.
2. The structure of claim 1 further comprising a mount, wherein the UVLED is attached to the mount.
3. The structure of claim 2 wherein the mount comprises one of ceramic, circuit board, metal-core printed circuit board, and silicon.
4. The structure of claim 2 further comprising a sealing material disposed over the mount and forming a seal that protects the UVLED from the fluid.
5. The structure of claim 4 wherein the sealing material is UV-stable and transparent.
6. The structure of claim 4 wherein the sealing material is a different material from the optic.
7. The structure of claim 2 further comprising a space between the mount and the optic.
8. The structure of claim 7 wherein the space is filled with one of oil and an index matching material.
9. The structure of claim 1 wherein the optic is a solid, transparent material.
10. The structure of claim 1 wherein:
the optic comprises a first surface proximate the UVLED and a second surface, the second surface comprising an outlet surface opposite the first surface; and
the outlet surface is matched to a shape of the chamber.
11. The structure of claim 1 wherein the optic is quartz.
12. The structure of claim 1 wherein the optic is one of glass, silicone, and sapphire.
13. The structure of claim 1 wherein the sidewall of the chamber is coated with a reflective coating.
14. The structure of claim 13 wherein the reflective coating comprises a multilayer stack comprising aluminum and SiO 2 .
15. A structure comprising:
an elongated chamber for holding a fluid, the chamber having a sidewall generally parallel with a flow of the fluid through the chamber;
a ultraviolet light emitting diode (UVLED) disposed along the sidewall of the chamber, the UVLED comprising a semiconductor device comprising an active layer that emits radiation having a peak wavelength in an ultraviolet range disposed between an n-type region and a p-type region;
a sealed compartment positioned on the sidewall of the chamber, wherein the UVLED is disposed within the sealed compartment, the sealed compartment comprising first sidewalls and a lens, wherein the lens is in direct contact with the fluid, and wherein the sealed compartment isolates and protects the UVLED from the fluid.
16. The structure of claim 15 wherein the lens is quartz.
17. The structure of claim 15 wherein the UVLED is attached to a mount.