Method of manufacturing semiconductor device and substrate processing apparatus
Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate;
(b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate;
(c) forming a laminated film on the substrate by performing (a) and (b); and
(d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.
2. The method of claim 1 , wherein, in (b), the first source is supplied after supplying the third source and the second source is supplied after supplying the first source.
3. The method of claim 1 , wherein the first source and the second source are alternately supplied X times in (a) where X is a natural number, and
the third source, the first source and the second source are sequentially supplied Y times in (b) where Y is a natural number.
4. The method of claim 1 , wherein (a) and (b) are alternately performed Z times in (c) where Z is a natural number.
5. The method of claim 3 , wherein (a) and (b) are alternately performed Z times in (c) where Z is a natural number.
6. The method of claim 3 , wherein at least one of X and Y is adjusted in (d) such that a work function of the laminated film is within a predetermined range.
7. The method of claim 5 , wherein at least one of X, Y and Z is adjusted in (d) such that a work function of the laminated film is within a predetermined range.
8. The method of claim 5 , wherein X, Y and Z are adjusted in (d) such that a work function of the laminated film is within a predetermined range.
9. The method of claim 5 , wherein a product of X and Y and a product of Y and Z are adjusted in (d) such that a work function of the laminated film is within a predetermined range.
10. The method of claim 7 , wherein X, Y and Z are adjusted in (d) such that the work function of the laminated film is within a range from 4.52 eV to 4.68 eV.
11. The method of claim 7 , wherein (d) is performed such that a ratio of carbon to nitrogen in the laminated film is equal to or less than ¼.
12. The method of claim 7 , wherein (d) is performed such that a ratio of carbon to nitrogen in the laminated film is equal to or less than ⅙.
13. The method of claim 7 , wherein (d) is performed such that a ratio of carbon to nitrogen in the laminated film is equal to or less than 1/10.
14. The method of claim 8 , wherein X is adjusted in (a) such that a thickness of the titanium nitride layer is within a range from 0.03 nm to 20 nm,
Y is adjusted in (b) such that a thickness of the titanium aluminum carbonitride layer is within a range from 0.1 nm to 20 nm, and
Z is adjusted in (c) such that a thickness of the laminated film is within a range from 1.0 nm to 200 nm.