Nonvolatile memory device
A ferroelectric memory device is disclosed. The ferroelectric memory device includes a substrate, an indium-gallium-zinc oxide layer disposed on the substrate, a ferroelectric material layer disposed on the indium-gallium-zinc oxide layer, a gate electrode layer disposed on the ferroelectric material layer, and a source electrode layer and a drain electrode layer that are disposed the ends of the gate electrode. The indium-gallium-zinc oxide layer is recessed to form a trench at the ends of the gate electrode. The trench is filled with a conductive material to form the source electrode layer and the drain electrode layer.
1. A ferroelectric memory device comprising:
a substrate;
an indium-gallium-zinc oxide layer disposed on the substrate;
a ferroelectric material layer disposed on the indium-gallium-zinc oxide layer;
a gate electrode layer disposed on the ferroelectric material layer; and
a source electrode layer disposed in a first trench recessed in the indium-gallium-zinc oxide at a first end of the gate electrode and a drain electrode layer disposed in a second trench recessed in the indium-gallium-zinc oxide at a second end of the gate electrode.
2. The ferroelectric memory device of claim 1 , wherein the indium-gallium-zinc oxide layer has a C-axis aligned crystal structure.
3. The ferroelectric memory device of claim 1 , further comprising
a gate dielectric layer disposed between the indium-gallium-zinc oxide layer and the ferroelectric material layer.
4. The ferroelectric memory device of claim 3 , wherein the gate dielectric layer comprises at least one of silicon oxide, silicon nitride, and silicon oxynitride.
5. The ferroelectric memory device of claim 1 , wherein the ferroelectric material layer comprises at least one of HfO 2 , ZrO 2 , Hf 0.5 Zr 0.5 O 2 , PbZr x Ti 1-x O 3 (0<x<1, PZT), Ba(Sr, Ti)O 3 (BST), Bi 4-x La x Ti 3 O 12 (0<x<1, BLT), SrBi 2 Ta 2 O 9 (SBT), Pb 5 Ge 5 O 11 (PGO), SrBi 2 Nb 2 O 9 (SBN) and YMnO 3 .
6. The ferroelectric memory device of claim 1 , wherein the ferroelectric material layer comprises at least one of HfO 2 , ZrO 2 , and Hf 0.5 Zr 0.5 O 2 , and at least one dopant selected from carbon (C), silicon (Si), magnesium (Mg), aluminum (Al), yttrium (Y), nitrogen (N), germanium (Ge), tin (Sn), strontium (Sr), lead (Pb), calcium (Ca), barium (Ba), titanium (Ti), gadolinium (Gd), and lanthanum (La).
7. The ferroelectric memory device of claim 1 , wherein the gate electrode layer comprises at least one selected from tungsten, titanium, copper, aluminum, ruthenium, platinum, iridium, iridium oxide, tungsten nitride, titanium nitride, tantalum nitride, tungsten carbide, titanium carbide, tungsten silicide, titanium silicide, tantalum silicide, and ruthenium oxide.
8. The ferroelectric memory device of claim 1 , wherein each of the source electrode layer and the drain electrode layer comprises at least one selected from metal, conductive metal nitride, conductive metal silicide, and conductive metal carbide.
9. The ferroelectric memory device of claim 1 , further comprising
a channel region disposed in the indium-gallium-zinc oxide layer below the gate electrode layer.
10. The ferroelectric memory device of claim 1 , wherein a depth of the trench is between one-tenth and one-half thickness of the indium-gallium-zinc oxide layer.
11. A ferroelectric memory device comprising:
a substrate;
an indium-gallium-zinc oxide layer having a C-axis aligned crystal structure and disposed on the substrate;
an insulation layer disposed on the indium-gallium-zinc oxide layer;
a ferroelectric material layer disposed on the insulation layer;
a gate electrode layer disposed on the ferroelectric material layer; and
a source electrode layer disposed in a first trench recessed in the indium-gallium-zinc oxide at a first end of the gate electrode and a drain electrode layer disposed in a second trench recessed in the indium-gallium-zinc oxide at a second end of the gate electrode,
wherein the ferroelectric material layer comprises at least one of HfO2, ZrO2, and Hf0.5Zr0.5O2, and
wherein the ferroelectric material layer stores one of a plurality of remanent polarization orientation states in a nonvolatile manner, and
wherein the plurality of remanent polarization orientation states correspond to a plurality of program voltages applied to the gate electrode layer.
12. The ferroelectric memory device of claim 11 , wherein the ferroelectric material layer comprises at least one dopant selected from carbon (C), silicon (Si), magnesium (Mg), aluminum (Al), yttrium (Y), nitrogen (N), germanium (Ge), tin (Sn), strontium (Sr), lead (Pb), calcium (Ca), barium (Ba), titanium (Ti), gadolinium (Gd), and lanthanum (La).
13. The ferroelectric memory device of claim 11 , wherein the gate electrode layer comprises at least one selected from tungsten, titanium, copper, aluminum, ruthenium, platinum, iridium, iridium oxide, tungsten nitride, titanium nitride, tantalum nitride, tungsten carbide, titanium carbide, tungsten silicide, titanium silicide, tantalum silicide, and ruthenium oxide.
14. The ferroelectric memory device of claim 11 , wherein the insulation layer comprises at least one of silicon oxide, silicon nitride and silicon oxynitride.
15. The ferroelectric memory device of claim 11 , further comprising
a channel region disposed in the indium-gallium-zinc oxide layer below the gate electrode layer.
16. The ferroelectric memory device of claim 11 ,
wherein the indium-gallium-zinc oxide layer comprises a channel region disposed between the source electrode layer and the drain electrode layer, and
wherein the channel region has one of a plurality of channel resistance states corresponding to the one of the plurality of remanent polarization orientation states when a read voltage is applied to the gate electrode layer.
17. The ferroelectric memory device of claim 11 , wherein a depth of the trench is between one-tenth and one-half thickness of the indium-gallium-zinc oxide layer.
18. A ferroelectric memory device comprising:
a substrate;
an indium-gallium-zinc oxide layer having a C-axis aligned crystal structure and disposed on the substrate;
an insulation layer disposed on the indium-gallium-zinc oxide layer;
a ferroelectric material layer disposed on the insulation layer;
a gate electrode layer disposed on the ferroelectric material layer,
a channel region disposed in the indium-gallium-zinc oxide layer below the gate electrode layer; and
a source electrode layer and a drain electrode layer disposed in the indium-gallium-zinc oxide layer opposite to each other with respect to the channel region,
wherein the source electrode layer and the drain electrode layer disposed in a plurality of trenches recessed in the indium-gallium-zinc oxide layer,
wherein the ferroelectric material layer stores one of a plurality of remanent polarization orientation states in a nonvolatile manner, and
wherein the plurality of remanent polarization orientation states correspond to a plurality of program voltages applied to the gate electrode layer, and
wherein the channel region has one of a plurality of channel resistance states corresponding to the one of the plurality of remanent polarization states when a read voltage is applied to the gate electrode layer.
19. The ferroelectric memory device of claim 18 , wherein the ferroelectric material layer comprises at least one of HfO 2 , ZrO 2 , Hf 0.5 Zr 0.5 O 2 , PbZr x Ti 1-x O 3 (0<x<1, PZT), Ba(Sr, Ti)O 3 (BST), Bi 4-x La x Ti 3 O 12 (0<x<1, BLT), SrBi 2 Ta 2 O 9 (SBT), Pb 5 Ge 5 O 11 (PGO), SrBi 2 Nb 2 O 9 (SBN) and YMnO 3 .
20. The ferroelectric memory device of claim 19 , wherein the gate electrode layer comprises at least one selected from tungsten, titanium, copper, aluminum, ruthenium, platinum, iridium, iridium oxide, tungsten nitride, titanium nitride, tantalum nitride, tungsten carbide, titanium carbide, tungsten silicide, titanium silicide, tantalum silicide, and ruthenium oxide.