Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type; a first semiconductor region of a second conductivity type; a second semiconductor region of the second conductivity type, connected with the first semiconductor region; a first electrode forming a Schottky contact with a first semiconductor layer and a first semiconductor region; and a second electrode forming an ohmic contact with the second semiconductor region. A density of the second electrode is lower at a center portion of the silicon carbide semiconductor substrate and increases toward an outer peripheral side.
1. A silicon carbide semiconductor device, comprising:
a first semiconductor layer of a first conductivity type, formed on a front surface of a silicon carbide semiconductor substrate of the first conductivity type;
a first semiconductor region of a second conductivity type, selectively formed in a surface layer of the first semiconductor layer;
a second semiconductor region of the second conductivity type, selectively formed in the surface layer of the first semiconductor layer so as to be connected with the first semiconductor region, bottoms of the first semiconductor region and the second semiconductor region being located at a same depth relative to a surface of the first semiconductor layer and within the first semiconductor layer;
a first electrode forming a Schottky contact with the first semiconductor layer and the first semiconductor region; and
a second electrode forming an ohmic contact with the second semiconductor region,
wherein
a density of the second electrode per unit area of the silicon carbide semiconductor substrate in a plan view is higher at a center portion of the silicon carbide semiconductor substrate and decreases in a direction toward an outer peripheral side of the silicon carbide semiconductor substrate.
2. The silicon carbide semiconductor device according to claim 1 , comprising
an active region through which main current flows, the active region being formed on the silicon carbide semiconductor substrate; and
an edge termination region surrounding a periphery of the active region, wherein
the active region is constituted by the center portion and an outer peripheral portion surrounding the center portion,
the second semiconductor region is formed in the center portion of the active region,
the second electrode is formed on a surface of the second semiconductor region.
3. The silicon carbide semiconductor device according to claim 2 , wherein
the second electrode has one of a contiguous structure, a dot structure, and a stripe structure.
4. The silicon carbide semiconductor device according to claim 2 , wherein the second electrode has a contiguous structure, such that the second electrode comprises a single electrode centered at the center portion of the silicon carbide semiconductor substrate, and the outer peripheral side of the silicon carbide semiconductor substrate has no second electrode thereon.
5. The silicon carbide semiconductor device according to claim 2 , wherein the second electrode has a dot structure, such that the second electrode comprises a plurality of separate second electrodes spaced apart from each other, the plurality of separate second electrodes being spaced more densely toward the center portion of the silicon carbide semiconductor substrate than towards the outer peripheral side of the silicon carbide semiconductor substrate.
6. The silicon carbide semiconductor device according to claim 2 , wherein the second electrode has a stripe structure, such that the second electrode comprises a plurality of second electrode stripes located closer to the center portion of the silicon carbide semiconductor substrate than to the outer peripheral side of the silicon carbide semiconductor substrate.
7. The silicon carbide semiconductor device according to claim 2 , wherein
the second electrode is an electrode to which is connected, a wire electrically connected an external destination.
8. The silicon carbide semiconductor device according to claim 7 , comprising
a passivation film covering the second electrode, wherein
the wire is connected at an opening of the passivation film.
9. The silicon carbide semiconductor device according to claim 2 , wherein element breakdown voltage is 1200V or less.
10. The silicon carbide semiconductor device according to claim 1 , wherein the second electrode includes a plurality of second electrodes, and
each of the second electrodes has a square shape.
11. The silicon carbide semiconductor device according to claim 1 , wherein the second electrode includes a plurality of second electrodes, and
the second semiconductor region includes a plurality of second semiconductor regions, such that each of the plurality of second electrodes forms the ohmic contact with a separate one of the plurality of second semiconductor regions.
12. The silicon carbide semiconductor device according to claim 1 , further comprising a third semiconductor region of the second conductivity type, the third semiconductor region located in the outer peripheral side, the third semiconductor region having a higher impurity concentration than that of the first semiconductor layer,
wherein bottoms of the first to third semiconductor regions are located at a same depth relative to the surface of the first semiconductor layer and within the first semiconductor layer.
13. A silicon carbide semiconductor device, comprising:
a first semiconductor layer of a first conductivity type, formed on a front surface of a silicon carbide semiconductor substrate of the first conductivity type;
a first semiconductor region of a second conductivity type, selectively formed in a surface layer of the first semiconductor layer;
a second semiconductor region of the second conductivity type, selectively formed in the surface layer of the first semiconductor layer so as to be connected with the first semiconductor region;
a first electrode forming a Schottky contact with the first semiconductor layer and the first semiconductor region; and
a second electrode forming an ohmic contact with the second semiconductor region,
wherein a density of the second electrode per unit area of the silicon carbide semiconductor substrate in a plan view is higher at a center portion of the silicon carbide semiconductor substrate and decreases in a direction toward an outer peripheral side of the silicon carbide semiconductor substrate,
wherein the second electrode includes a plurality of second electrodes arranged such that a first group of two or more second electrodes is located at the center portion of the silicon carbide semiconductor device, in the plan view, and a second group of two or more second electrodes is closer to the outer peripheral side than the first group,
wherein the two or more second electrodes in the first group are separated from each other by a distance less than a width of each of the two or more second electrodes in the first group, and
the two or more electrodes in the second group are separated from each other by a distance greater than a width of each of the two or more second electrodes in the second group.
14. A silicon carbide semiconductor device, comprising:
a first semiconductor layer of a first conductivity type, formed on a front surface of a silicon carbide semiconductor substrate of the first conductivity type;
a first semiconductor region of a second conductivity type, selectively formed in a surface layer of the first semiconductor layer;
a second semiconductor region of the second conductivity type, selectively formed in the surface layer of the first semiconductor layer so as to be connected with the first semiconductor region;
a first electrode forming a Schottky contact with the first semiconductor layer and the first semiconductor region; and
a second electrode forming an ohmic contact with the second semiconductor region,
wherein a density of the second electrode per unit area of the silicon carbide semiconductor substrate as viewed from a plan view is higher at a center portion of the silicon carbide semiconductor substrate and decreases in a direction toward an outer peripheral side of the silicon carbide semiconductor substrate, and
wherein the second semiconductor region abuts the first semiconductor region.
15. The silicon carbide semiconductor device according to claim 14 , comprising
an active region through which main current flows, the active region being formed on the silicon carbide semiconductor substrate; and
an edge termination region surrounding a periphery of the active region, wherein
the active region is constituted by the center portion and an outer peripheral portion surrounding the center portion,
the second semiconductor region is formed in the center portion of the active region,
the second electrode is formed on a surface of the second semiconductor region.
16. The silicon carbide semiconductor device according to claim 15 , wherein
the second electrode has one of a contiguous structure, a dot structure, and a stripe structure.
17. The silicon carbide semiconductor device according to claim 15 , wherein the second electrode has a contiguous structure, such that the second electrode comprises a single electrode centered at the center portion of the silicon carbide semiconductor substrate, and the outer peripheral side of the silicon carbide semiconductor substrate has no second electrode thereon.
18. The silicon carbide semiconductor device according to claim 15 , wherein the second electrode has a dot structure, such that the second electrode comprises a plurality of separate second electrodes spaced apart from each other, the plurality of separate second electrodes being spaced more densely toward the center portion of the silicon carbide semiconductor substrate than towards the outer peripheral side of the silicon carbide semiconductor substrate.
19. The silicon carbide semiconductor device according to claim 15 , wherein the second electrode has a stripe structure, such that the second electrode comprises a plurality of second electrode stripes located closer to the center portion of the silicon carbide semiconductor substrate than to the outer peripheral side of the silicon carbide semiconductor substrate.