IP Library Granted Patent US 10,403,443
Granted Patent B2
US 10,403,443 · App. 14/871,402 · Granted Sep 3, 2019

Solid electrolytic capacitor with high temperature leakage stability

Inventors: Antony P. Chacko (Simpsonville, SC); Randolph S. Hahn (Simpsonville, SC); Pablo Antonio Ruiz (Simpsonville, SC)
Assignee: KEMET Electronics Corporation
H01G9/0032C25D7/00C25D11/26H01G9/012H01G9/025H01G9/048H01G9/15C25D11/04Y10T29/417
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Quick Facts
Patent No.
US 10,403,443
App. No.
14/871,402
Granted
Sep 3, 2019
Kind
B2
Abstract

A solid electrolytic capacitor and method for forming a solid electrolytic capacitor with high temperature leakage stability is described. The solid electrolytic capacitor has improved leakage current and is especially well suited for high temperature environments such as down-hole applications.

Claims (24)

1. A method for forming a solid electrolytic capacitor comprising:

providing an anode;

forming a dielectric layer on said anode;

applying a cathode layer on said dielectric layer;

applying a transition layer on said cathode layer wherein said transition layer comprises a blocking layer wherein said blocking layer is hydrophobic and insulative;

plating a metal layer on said transition layer; and

electrically connecting a cathode termination to said cathode layer;

wherein said solid electrolytic capacitor has a leakage shift of no more than 50% after 500 hrs at 200° C. relative to the leakage after 500 hours at ambient temperature.

2. The method for forming a solid electrolytic capacitor of claim 1 wherein said solid electrolytic capacitor has a leakage shift of no more than 50% after 500hrs at 220° C. relative to the leakage after 500 hours at ambient temperature.

3. The method for forming a solid electrolytic capacitor of claim 1 wherein the median leakage shift at 200° C. for 500 hrs is less than 20% relative to the leakage after 500 hours at ambient temperature.

4. The method for forming a solid electrolytic capacitor of claim 1 wherein said solid electrolytic capacitor has a leakage of no more than 0.10 CV after 500 hrs at a temperature of at least 200° C.

5. The method for forming a solid electrolytic capacitor of claim 1 wherein said capacitor has a leakage of no more than 0.10 CV after 500 hrs at temperature greater than 220° C.

6. The method for forming a solid electrolytic capacitor of claim 1 wherein said metal layer does not contain silver or sulfur.

7. The method for forming a solid electrolytic capacitor of claim 1 wherein said plating a metal layer comprises plating a layer comprising nickel.

8. The method for forming a solid electrolytic capacitor of claim 7 wherein said plating a metal layer comprises plating a layer consisting essentially of nickel.

9. The method for forming a solid electrolytic capacitor of claim 1 wherein said cathode layer is MnO 2 .

10. The method for forming a solid electrolytic capacitor of claim 1 wherein said cathode layer has a thermal decomposition temperature of greater than 350° C.

11. The method for forming a solid electrolytic capacitor of claim 10 wherein said thermal decomposition temperature is greater than 500° C.

12. The method for forming a solid electrolytic capacitor of claim 1 wherein said capacitor is encapsulated.

13. The method for forming a solid electrolytic capacitor of claim 12 wherein said capacitor is encapsulated in a material selected from polymer, metal and ceramic.

14. The method for forming a solid electrolytic capacitor of claim 12 wherein said capacitor is encapsulated in a hermetic seal.

15. The method for forming a solid electrolytic capacitor of claim 12 wherein said capacitor is encapsulated in a material which does not form a hermetic seal.

16. The method for forming a solid electrolytic capacitor of claim 1 wherein said blocking layer has a thickness of less than 2 microns.

17. The method for forming a capacitor of claim 1 wherein said plating a metal layer is done by electroplating.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2019
From: CHACKO, ANTONY P.; HAHN, RANDOLPH S.; RUIZ, PABLO ANTONIO
To: KEMET ELECTRONICS CORPORATION
Reel/Frame 049102/0165 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: BANK OF AMERICA, N.A.
To: KEMET CORPORATION,; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
Reel/Frame 047450/0926 →
SECURITY AGREEMENT Recorded May 22, 2017
From: KEMET CORPORATION; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 042523/0639 →
Continuity (6)
Division 14063205 · Oct 25, 2013
Continuation In Part 13863451 · Apr 16, 2013
Division 12972917 · Dec 20, 2010
Continuation In Part 12469786 · May 21, 2009
Provisional Application 61718847 · Oct 26, 2012
Related Publication 20160020034A1 · Jan 21, 2016