Integrated electronic components and methods of formation thereof
Provided are integrated electronic components which include a waveguide microstructure formed by a sequential build process and an electronic device, and methods of forming such integrated electronic components. The microstructures have particular applicability to devices for transmitting electromagnetic energy and other electronic signals.
1. A method of forming an integrated electronic component, comprising:
providing an electronic device;
disposing a plurality of layers over a substrate, wherein the layers comprise one or more of dielectric, conductive and sacrificial materials; and
forming from the layers a microstructure comprising: a waveguide section comprising a plurality of waveguides, the waveguides each having a non-solid core volume within an outer conductor surrounding the core volume; and a transition structure coupling the waveguides to the electronic device,
wherein the waveguides each comprise a center conductor disposed in and surrounded by the outer conductor with the non-solid volume disposed between the center conductor and the outer conductor, and wherein the transition structure comprises a post mechanically coupling the substrate to the center conductor.
2. The method according to claim 1 , wherein the transition structure comprises a thermally conductive material and an electrically isolative material.
3. The method according to claim 1 , wherein the transition structure is disposed at an end of the center conductor.
4. The method according to claim 1 , wherein the center conductor primarily comprises copper.
5. The method according to claim 1 , wherein the transition structure comprises a dielectric.
6. The method according to claim 1 , wherein the substrate comprises silicon carbide.
7. The method according to claim 1 , wherein the core volume comprises air.
8. The method according to claim 1 , wherein the core volume comprises a vaporizing and condensing vapor.
9. The method according to claim 1 , wherein the transition structure is mechanically designed to expand and contract dimensionally with a coefficient of thermal expansion more closely resembling the substrate coefficient of thermal expansion than the coefficient of thermal expansion of the waveguide section.
10. The method according to claim 1 , wherein the outer conductor has an opening disposed therein and the electronic device is disposed within the opening.
11. The method according to claim 1 , wherein the electronic device is coupled at a location proximate an upper surface of the outer conductor.
12. The method according to claim 1 , wherein the electronic device is mechanically coupled to the outer conductor.
13. The method according to claim 1 , wherein the transition structure includes a support post electrically coupling the electronic device to the waveguide section.
14. The method according to claim 1 , comprising providing a ground plane structure proximate the electronic device to provide electrical shielding from radiation modes.
15. The method according to claim 1 , wherein the transition structure comprises a lead frame circumscribing the electronic device.
16. The method according to claim 1 , wherein the transition structure comprises a plurality of lead-frame-like fingers configured to provide mechanical flexibility between the microstructure and the electronic device.
17. The method according to claim 1 , wherein the transition structure comprises alumina.
18. The method according to claim 1 , wherein the waveguides include a support structure to support the center conductor within the core volume.
19. The method according to claim 18 , wherein the support structure comprises alumina.
20. The method according to claim 19 , wherein the support structure comprises a pedestal.
21. The method according to claim 18 , wherein the support structure comprises a pedestal.