Electrostatic discharge (ESD) protection device and method for operating an ESD protection device
Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and a diode connected in series with the three or more bipolar transistors and one of the first and second nodes. Each of the three or more bipolar transistors includes a collector comprising collector components, an emitter comprising emitter components, and a base structure comprising a substrate region or an active region. The emitter components are alternately located with respect to the collector components. The substrate region or the active region surrounds the collector components and the emitter components. Other embodiments are also described.
1. An electrostatic discharge (ESD) protection device, the ESD protection device comprising:
three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes, wherein each of the three or more bipolar transistors comprises:
a collector comprising a plurality of collector components;
an emitter comprising a plurality of emitter components, wherein the emitter components are alternately located with respect to the collector components; and
a base structure comprising a base ring, wherein the base ring comprises a substrate region, wherein the substrate region of the base ring surrounds the collector components and the emitter components; and
a diode connected in series with the three or more bipolar transistors and one of the first and second nodes.
2. The ESD protection device of claim 1 , wherein the base structure comprises the substrate region, and wherein the base structure further comprises a plurality of base contacts located at corners of the base structure.
3. The ESD protection device of claim 1 , wherein the base structure comprises the substrate region, wherein the base structure further comprises only four base contacts, and wherein each of the four base contacts is located at a different corner of the base structure.
4. The ESD protection device of claim 1 , wherein the base structure comprises the substrate region and an active region, wherein the active region is located vertically with respect to the substrate region, and wherein the base structure comprises no base contact.
5. The ESD protection device of claim 1 , wherein the base structure comprises the substrate region, and wherein the base structure comprises no base contact and no active region.
6. The ESD protection device of claim 1 , wherein the three or more bipolar transistors are connected in series between the first and second nodes.
7. The ESD protection device of claim 1 , wherein the three or more bipolar transistors comprise PNP bipolar transistors.
8. The ESD protection device of claim 4 , further comprising a second active region that physically separates the three or more bipolar transistors and the diode.
9. The ESD protection device of claim 1 , wherein the diode and one of the three or more bipolar transistors operate as a silicon controlled rectifier (SCR).
10. The ESD protection device of claim 8 , wherein the diode and the one of the three or more bipolar transistors share a substrate layer.
11. An electrostatic discharge (ESD) protection device, the ESD protection device comprising:
three or more PNP bipolar transistors connected in series that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes, wherein each of the three or more PNP bipolar transistors comprises:
a collector comprising a plurality of collector components;
an emitter comprising a plurality of emitter components, wherein the emitter components are alternately located with respect to the collector components; and
a base structure comprising a base ring, wherein the base ring comprises a substrate region, wherein the substrate region of the base ring surrounds the collector components and the emitter components; and
a diode connected in series with the three or more bipolar transistors and one of the first and second nodes, wherein the diode and one of the three or more PNP bipolar transistors operate as a silicon controlled rectifier (SCR).
12. The ESD protection device of claim 11 , wherein the base structure comprises the substrate region, and wherein the base structure further comprises a plurality of base contacts located at corners of the base structure.
13. The ESD protection device of claim 11 , wherein the base structure comprises the substrate region, wherein the base structure further comprises only four base contacts, and wherein each of the four base contacts is located at a different corner of the base structure.
14. The ESD protection device of claim 11 , wherein the base structure comprises the substrate region and an active region, wherein the active region is located vertically with respect to the substrate region, and wherein the base structure comprises no base contact.
15. The ESD protection device of claim 11 , wherein the base structure comprises the substrate region, and wherein the base structure comprises no base contact and no active region.
16. The ESD protection device of claim 14 , further comprising a second active region that physically separates the three or more bipolar transistors and the diode.
17. A method for operating an electrostatic discharge (ESD) protection device, wherein the ESD protection device comprises three or more bipolar transistors and a diode connected in series with the three or more bipolar transistors, the method comprising:
receiving an ESD pulse at the ESD protection device;
in response to the ESD pulse, enabling an embedded silicon controlled rectifier (eSCR) component that includes a combination of a particular bipolar transistor from the three or more bipolar transistors and the diode, wherein the particular bipolar transistor comprises a collector comprising a plurality of collector components, an emitter comprising a plurality of emitter components alternately located with respect to the collector components, and a base structure comprising a base ring, wherein the base ring comprises a substrate region, and wherein the substrate region of the base ring surrounds the collector components and the emitter components; and
conducting an ESD current from the ESD pulse through the three or more bipolar transistors and the diode.
18. The method of claim 17 , wherein the base structure comprises the substrate region, and wherein the base structure further comprises a plurality of base contacts located at corners of the base structure.
19. The method of claim 17 , wherein the base structure comprises the substrate region and an active region, wherein the active region is located vertically with respect to the substrate region, and wherein the base structure comprises no base contact.
20. The method of claim 17 , wherein the base structure comprises the substrate region, and wherein the base structure comprises no base contact and no active region.