IP Library Granted Patent US 10,458,017
Granted Patent B2
US 10,458,017 · App. 14/440,000 · Granted Oct 29, 2019

Film-forming apparatus to form a film on a substrate

Inventors: Takahiro Shirahata (Tokyo, JP); Hiroyuki Orita (Tokyo, JP); Takahiro Hiramatsu (Tokyo, JP)
Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
C23C16/455B05B7/0012B05B7/0483B05B12/18B05B14/00B05B15/55C23C16/4412C23C16/4486C23C16/46B05B1/044B05B7/0075B05B7/0807B05B7/0861
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Quick Facts
Patent No.
US 10,458,017
App. No.
14/440,000
Granted
Oct 29, 2019
Kind
B2
Abstract

A film forming apparatus includes a spray nozzle, a first chamber, a first gas supply port, a second chamber, a through hole, and a mist outlet. A solution transformed into droplets that is to be sprayed from the spray nozzle is housed in the first chamber and transformed into a mist in the first chamber by gas injected from the first gas supply port. The solution in mist form moves from the first chamber through the through hole to the second chamber and is misted onto a substrate from the mist outlet of the second chamber.

Claims (37)

1. A film forming apparatus for forming a film on a substrate, comprising:

a spray nozzle from which a solution in droplet form is to be sprayed;

a first chamber to house said solution in droplet form that is to be sprayed from said spray nozzle;

a first gas supply port from which gas is to be injected and caused to collide with said solution housed in said first chamber, said solution in droplet form being transformed into a mist by colliding with said gas injected from said first gas supply port in said first chamber;

a second chamber provided adjacent to said first chamber;

a through hole that is formed in a wall surface between said first chamber and said second chamber and through which said solution in mist form is led from said first chamber into said second chamber;

a mist outlet that is formed in said second chamber to face said substrate provided outside said second chamber and from which said solution in mist form is misted onto said substrate; and

a second gas supply port formed in said second chamber, from which gas is to be injected to lead said solution in mist form that is housed in said second chamber to said mist outlet,

wherein a cross-sectional area of the second chamber along planes parallel to the substrate is substantially constant from the second gas supply port to the mist outlet.

2. The film forming apparatus according to claim 1 , further comprising:

an exhaust port that is formed facing said substrate and adjacent to one side of said mist outlet and through which a fluid is to be exhausted.

3. The film forming apparatus according to claim 2 , further comprising:

a third gas supply port that is formed facing said substrate and adjacent to another side of said mist outlet and from which gas is to be injected.

4. The film forming apparatus according to claim 1 , wherein

said mist outlet is a rectangular opening.

5. The film forming apparatus according to claim 2 , wherein

said exhaust port is a rectangular opening.

6. The film forming apparatus according to claim 3 , wherein

said third gas supply port is a rectangular opening.

7. The film forming apparatus according to claim 1 , wherein

said spray nozzle is provided through a wall surface of said first chamber, and

said wall surface through which said spray nozzle is provided includes a heat regulator to adjust a temperature.

8. The film forming apparatus according to claim 1 , wherein

said spray nozzle is movable, and

said spray nozzle includes a cleaning liquid supply port from which a cleaning liquid is supplied to a fluid path of said spray nozzle.

9. The film forming apparatus according to claim 1 , further comprising:

a substrate placement device on which said substrate is to be placed and that moves in a horizontal direction relative to said mist outlet.

10. The film forming apparatus according to claim 9 , wherein said substrate placement device is configured to heat the substrate.

11. The film forming apparatus according to claim 3 , wherein

said solution that reacts with oxygen is sprayed from said spray nozzle,

an inert gas is injected from said first gas supply port,

an inert gas is injected from said second gas supply port, and

an oxidizing agent is injected from said third gas supply port.

12. The film forming apparatus according to claim 1 , wherein

said solution that reacts with oxygen is sprayed from said spray nozzle,

an inert gas is injected from said first gas supply port, and

an oxidizing agent is injected from said second gas supply port.

Assignments (2)
CHANGE OF NAME Recorded Apr 26, 2024
From: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
To: TMEIC CORPORATION
Reel/Frame 067244/0359 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2015
From: SHIRAHATA, TAKAHIRO; ORITA, HIROYUKI; HIRAMATSU, TAKAHIRO
To: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
Reel/Frame 035540/0597 →
Continuity (1)
Related Publication 20150299854A1 · Oct 22, 2015