Magnetic field sensor to detect direction of angular rotation of a rotating magnetic structure, speed of the rotating magnetic structure or fault
In one aspect, an integrated circuit (IC) includes a magnetic field sensor to detect speed and direction of angular rotation of a rotating magnetic structure. The magnetic field sensor includes at least two magnetic field sensing elements configured to sense changes in a magnetic field caused by rotation of the magnetic structure. The IC also includes an output port configured to provide an output signal of the magnetic field sensor. The output signal indicates the angular direction and one of the speed or a fault.
1. An integrated circuit (IC) comprising:
a magnetic field sensor to detect speed and direction of angular rotation of a rotating magnetic structure, the magnetic field sensor comprising:
at least two magnetic field sensing elements configured to sense changes in a magnetic field caused by rotation of the magnetic structure; and
an output port configured to provide an output signal of the magnetic field sensor, the output signal indicating the angular direction and one of the speed or a fault,
wherein the output signal at a first value or at a second value indicating the magnetic structure rotating in a first direction,
wherein the output signal at a third value or at a fourth value indicating the magnetic structure rotating in a second direction opposite the first direction,
wherein no two values of the first value, the second value, the third value or the fourth value are equal.
2. The IC of claim 1 , wherein a frequency of the output signal indicates the speed or a fault.
3. The IC of claim 2 , wherein the frequency within a frequency range indicates the speed.
4. The IC of claim 3 , wherein the frequency below the frequency range indicates one or more faults.
5. The IC of claim 3 , wherein the frequency above the frequency range indicates one or more faults.
6. The IC of claim 3 , wherein the frequency above and below the frequency range indicates one or more faults.
7. The IC of claim 1 , wherein the magnetic structure is a ring magnet.
8. The IC of claim 1 , wherein at least one of the magnetic sensing elements is a Hall-effect element.
9. The IC of claim 1 , wherein an amplitude of the output signal indicates the angular direction.
10. The IC of claim 1 , wherein the output signal is a current signal.
11. The IC of claim 1 , wherein the fault indicating at least one of: a loose wire, malfunction of the IC, a gap between the magnetic structure and the IC being above or below a distance threshold or a temperature of the IC exceeds a temperature threshold.
12. The IC of claim 1 , wherein at least one of the at least two magnetic field sensing elements comprises at least one of a Hall effect element, a magnetoresistance element, or a magnetotransistor.
13. The IC of claim 12 , wherein the magnetoresistance element comprises at least one of a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, and a magnetic tunnel junction (MTJ).
14. An integrated circuit (IC) comprising:
a magnetic field sensor to detect speed and direction of angular rotation of a rotating magnetic structure, the magnetic field sensor comprising:
at least two magnetic field sensing elements configured to sense changes in a magnetic field caused by rotation of the magnetic structure; and
an output port configured to provide an output signal of the magnetic field sensor, the output signal indicating the angular direction and one of the speed or a fault,
wherein the output signal at a first value or at a second value indicating the magnetic structure rotating in a first direction,
wherein the output signal at a third value or at a fourth value indicating the magnetic structure rotating in a second direction opposite the first direction,
wherein the first value and the third value are equal.
15. The IC of claim 14 , wherein a frequency of the output signal indicates the speed or a fault,
wherein the frequency within a frequency range indicates the speed,
wherein the frequency below the frequency range indicates one or more faults, and
wherein the frequency above the frequency range indicates one or more faults.
16. The IC of claim 14 , wherein the magnetic structure is a ring magnet.
17. The IC of claim 14 , wherein at least one of the magnetic sensing elements is a Hall-effect element.
18. The IC of claim 14 , wherein an amplitude of the output signal indicates the angular direction.
19. The IC of claim 14 , wherein the output signal is a current signal.
20. The IC of claim 14 , wherein the fault indicating at least one of: a loose wire, malfunction of the IC, a gap between the magnetic structure and the IC being above or below a distance threshold or a temperature of the IC exceeds a temperature threshold.
21. The IC of claim 14 , wherein at least one of the at least two magnetic field sensing elements comprises at least one of a Hall effect element, a magnetoresistance element, or a magnetotransistor.
22. The IC of claim 21 , wherein the magnetoresistance element comprises at least one of a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, or a magnetic tunnel junction (MTJ).
23. An integrated circuit (IC) comprising:
a magnetic field sensor to detect speed and direction of angular rotation of a rotating magnetic structure, the magnetic field sensor comprising:
at least two magnetic field sensing elements configured to sense changes in a magnetic field caused by rotation of the magnetic structure; and
an output port configured to provide an output signal of the magnetic field sensor, the output signal indicating the angular direction and one of the speed or a fault, wherein the magnetic field sensor further comprises:
a first converter configured to convert a first signal from a first magnetic field sensing element to a first digital signal;
a second converter configured to convert a second signal from a second magnetic field sensing element to a second digital signal;
direction detection circuitry configured to receive the first digital signal and the second digital signal and to provide a direction signal;
a frequency locked loop configured to receive the first digital signal and to provide a frequency signal;
a decoder to receive the direction signal and the frequency signal; and
a two-wire circuit configured to receive at least three signals from the decoder and to provide the output signal.
24. The IC of claim 23 , wherein the two-wire circuit is configured to receive four signals from the decoder.
25. The IC of claim 23 , wherein the two-wire circuit comprises:
a voltage divider; and
an operational amplifier coupled to the voltage divider,
wherein the at least three signals are configured to enable gates in the voltage divider.
26. An integrated circuit (IC) comprising:
a magnetic field sensor means to detect speed and direction of angular rotation of a rotating magnetic structure, the magnetic field sensor means comprising:
a means to sense changes in a magnetic field caused by rotation of the magnetic structure; and
an output port configured to provide an output signal of the magnetic field sensor means, the output signal indicating the angular direction and one of the speed or a fault,
wherein the output signal at a first value or at a second value indicating the magnetic structure rotating in a first direction,
wherein the output signal at a third value or at a fourth value indicating the magnetic structure rotating in a second direction opposite the first direction,
wherein the first value and the third value are equal.
27. The IC of claim 26 , wherein a frequency of the output signal indicates the speed or a fault,
wherein the frequency within a frequency range indicates the speed,
wherein the frequency below the frequency range indicates one or more faults, and
wherein the frequency above the frequency range indicates one or more faults.
28. The IC of claim 26 , wherein the magnetic structure is a ring magnet.
29. The IC of claim 26 , wherein at least one of the magnetic sensing elements is a Hall-effect element.
30. The IC of claim 26 , wherein an amplitude of the output signal indicates the angular direction.
31. The IC of claim 26 , wherein the output signal is a current signal.
32. The IC of claim 26 , wherein the fault indicating at least one of: a loose wire, malfunction of the IC, a gap between the magnetic structure and the IC being above or below a distance threshold or a temperature of the IC exceeds a temperature threshold.
33. The IC of claim 26 , wherein at least one of the at least two magnetic field sensing elements comprises at least one of a Hall effect element, a magnetoresistance element, or a magnetotransistor.
34. The IC of claim 33 , wherein the magnetoresistance element comprises at least one of a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, or a magnetic tunnel junction (MTJ).
35. An integrated circuit (IC) comprising:
a magnetic field sensor to detect speed and direction of angular rotation of a rotating magnetic structure, the magnetic field sensor comprising:
at least two magnetic field sensing elements configured to sense changes in a magnetic field caused by rotation of the magnetic structure; and
an output port configured to provide an output signal of the magnetic field sensor, the output signal indicating the angular direction of the rotating magnetic structure and a fault indicator,
wherein a frequency of the output signal is the fault indicator indicating no faults are detected or a fault is detected,
wherein the frequency within a frequency range indicates no faults are detected and the speed of the rotating magnetic structure,
wherein the frequency below the frequency range indicates one or more faults, and
wherein the frequency above the frequency range indicates one or more faults.
36. The IC of claim 35 , wherein the rotating magnetic structure is a ring magnet.
37. The IC of claim 35 , wherein at least one of the magnetic sensing elements is a Hall-effect element.
38. The IC of claim 35 , wherein an amplitude of the output signal indicates the angular direction.
39. The IC of claim 35 , wherein the output signal is a current signal.
40. The IC of claim 35 , wherein the fault indicating at least one of: a loose wire, malfunction of the IC, a gap between the magnetic structure and the IC being above or below a distance threshold or a temperature of the IC exceeds a temperature threshold.
41. The IC of claim 35 , wherein at least one of the at least two magnetic field sensing elements comprises at least one of a Hall effect element, a magnetoresistance element, or a magnetotransistor.
42. The IC of claim 41 , wherein the magnetoresistance element comprises at least one of a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, or a magnetic tunnel junction (MTJ).
43. An integrated circuit (IC) comprising:
a magnetic field sensor means to detect speed and direction of angular rotation of a rotating magnetic structure, the magnetic field sensor means comprising:
a means to sense changes in a magnetic field caused by rotation of the magnetic structure; and
an output port configured to provide an output signal of the magnetic field sensor means, the output signal indicating the angular direction and one of the speed or a fault,
wherein the output signal at a first value or at a second value indicating the magnetic structure rotating in a first direction,
wherein the output signal at a third value or at a fourth value indicating the magnetic structure rotating in a second direction opposite the first direction,
wherein no two values of the first value, the second value, the third value or the fourth value are equal.
44. The IC of claim 43 , wherein a frequency of the output signal indicates the speed or a fault.
45. The IC of claim 44 , wherein the frequency within a frequency range indicates the speed.
46. The IC of claim 45 , wherein the frequency below the frequency range indicates one or more faults.
47. The IC of claim 45 , wherein the frequency above the frequency range indicates one or more faults.
48. The IC of claim 45 , wherein the frequency above or below the frequency range indicates one or more faults.
49. The IC of claim 45 , wherein the magnetic structure is a ring magnet.
50. The IC of claim 43 , wherein an amplitude of the output signal indicates the angular direction.
51. The IC of claim 43 , wherein the output signal is a current signal.
52. The IC of claim 43 , wherein the fault indicating at least one of: a loose wire, malfunction of the IC, a gap between the magnetic structure and the IC being above or below a distance threshold or a temperature of the IC exceeds a temperature threshold.