Topological insulator-based high efficiency switching of magnetic unit, method and applications

1. A magneto-electronic device, comprising:

a spin-orbit torque (SOT) generator layer;

a magnetic memory layer on the SOT generator layer; and

sensing electrodes configured to measure an anomalous Hall effect of the magnetic memory layer;

wherein the SOT generator layer comprises topological insulator material, and

wherein the magnetic memory layer comprises ferromagnetic material with perpendicular magnetic anisotropy.

2. The magneto-electronic device of claim 1 , wherein the SOT generator layer comprises at least one of SmB 6 , YbB 6 , YbB 12 , Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 , or BiSbTeSe 2 .

3. The magneto-electronic device of claim 1 , wherein the SOT generator layer comprises at least one of α-Sn, Bi 1-x Sb x , Sb, Bi 2 Te 2 Se, Bi 2 Te 3 , Sb 2 Te 3 , Bi 2-x Sb x Te 3-y Se y , Bi 2 Te 3-x Se x , Bi 2 Te 3-x S x , Sb 2 Te 2 Se, Bi 2 Te 2 Se, Bi 2 Se 2 Se, Bi 2 Te 2 S, Bi 2 Se 2 S, TlBiSe 2 , TlBiTe 2 , TlBiS 2 , TlBiSe 2 , PbBi 2 Te 4 , PbSb 2 Te 4 , GeBi 2 Te 4 , PbBi 4 Te 7 , GeBi 4-x Sb x Te 7 , Pb 5 (Bi 2 Se 3 ) 6 , Se 5 (Bi 2 Se 3 ) 6 , (Bi 2 )(Bi 2 Se 3-x S x ), (Bi 2 )(Bi 2 Te 3 ) 2 , SnTe, Pb 1-x Sn x Te, Pb 1-x Sn x Se, Ag 2 Te, Bi 14 Rh 3 I 9 , LuBiPt, DyBiPt, GdBiPt, or Nd 2 (Ir 1-x Rh x ) 2 O 7 .

4. The magneto-electronic device of claim 1 , wherein the magnetic memory layer comprises a nonmagnetic metal buffer layer, a magnetic metal layer, and an insulating layer,

wherein the nonmagnetic metal buffer layer comprises at least one of bismuth (Bi), copper (Cu), gold (Au), hafnium (Hf), iridium (Ir), lead (Pb), molybdenum (Mo), niobium (Nb), osmium (Os), palladium (Pd), platinum (Pt), rhenium (Re), ruthenium (Ru), tantalum (Ta), thallium (Tl), tungsten (W), any alloy thereof, or any combination thereof,

wherein the magnetic metal layer comprises at least one of cobalt (Co), iron (Fe), CoFeB, CoPd, CoPt, FePd, FePt, any alloy thereof, or any combination thereof, and

wherein the insulating layer comprises at least one of AlO x , boron nitride (BN), HfO 2 , magnesium oxide (MgO), boron-doped MgO, silicon oxide (SiO, SiO 2 ), tantalum oxide (TaO 2 , Ta 2 O 5 ), stoichiometric or non-stoichiometric titanium oxide (TiO, TiO 2 , Ti 2 O 3 ), or zirconium oxide (ZrO, ZrO 2 ).

5. The magneto-electronic device of claim 1 , wherein the magnetic memory layer comprises at least one of cobalt (Co), iron (Fe), CoFeAl, CoFeB, CoMnSi, CoPd, CoPt, CoTb, FePd, FePt, GdCo, MnGa, MnGe, MnSi, Mn 3 Ga, Mn 3 Ge, Mn 3 Sn, TeFeCo, [Co/Ni]n multilayers, [Co/Pd]n multilayers, [Co/Pt]n multilayers, any alloy thereof, or any combination thereof, and

wherein ‘n’ is greater than or equal to 1 and less than or equal to 10.

6. The magneto-electronic device of claim 1 , further comprising:

a nonmagnetic spacing layer on the magnetic memory layer; and

a magnetic pinning layer on the nonmagnetic spacing layer.

7. The magneto-electronic device of claim 6 , wherein the magnetic pinning layer comprises at least one of chromium (Cr), cobalt (Co), iron (Fe), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt), FeMn, IrMn, PtMn, Mn 3 Ga, Mn 3 Ge, Mn 3 Sn, chromium oxide (CrO, Cr 2 O 3 ), cobalt oxide (CoO, Co 2 O 3 , Co 3 O 4 ), manganese oxide (MnO, Mn 2 O 3 , Mn 3 O 4 ), nickel oxide (NiO, Ni 2 O 3 ), any alloy thereof, or any combination thereof.

8. A magneto-electronic device, comprising:

a spin-orbit torque (SOT) generator layer;

a first magnetic memory layer on the SOT generator layer;

an insulating layer on the first magnetic memory layer; and

a second magnetic memory layer on the insulating layer;

wherein the SOT generator layer comprises topological insulator material,

wherein the magneto-electronic device is configured to originate spin current in the SOT generator layer using a switching current within the SOT generator layer, and

wherein the first magnetic memory layer and the second magnetic memory layer comprise ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

9. The magneto-electronic device of claim 8 , wherein the SOT generator layer comprises at least one of SmB 6 , YbB 6 , YbB 12 , Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 , or BiSbTeSe 2 .

10. The magneto-electronic device of claim 8 , wherein the SOT generator layer comprises at least one of t-Sn, Bi 1-x Sb x , Sb, Bi 2 Te 2 Se, Bi 2 Te 3 , Sb 2 Te 3 , Bi 2-x Sb x Te 3-y Se y , Bi 2 Te 3-x Se x , Bi 2 Te 3-x S x , Sb 2 Te 2 Se, Bi 2 Te 2 Se, Bi 2 Se 2 Se, Bi 2 Te 2 S, Bi 2 Se 2 S, TlBiSe 2 , TlBiTe 2 , TlBiS 2 , TlBiSe 2 , PbBi 2 Te 4 , PbSb 2 Te 4 , GeBi 2 Te 4 , PbBi 4 Te 7 , GeBi 4-x Sb x Te 7 , Pb 5 (Bi 2 Se 3 ) 6 , Se 5 (Bi 2 Se 3 ) 6 , (Bi 2 )(Bi 2 Se 3-x S x ), (Bi 2 )(Bi 2 Te 3 ) 2 , SnTe, Pb 1-x Sn x Te, Pb 1-x Sn x Se, Ag 2 Te, Bi 14 Rh 3 I 9 , LuBiPt, DyBiPt, GdBiPt, or Nd 2 (Ir 1-x Rh x ) 2 O 7 .

11. The magneto-electronic device of claim 8 , wherein the first magnetic memory layer and the second magnetic memory layer comprise ferromagnetic material with the perpendicular magnetic anisotropy.

12. The magneto-electronic device of claim 11 , wherein the first magnetic memory layer and the second magnetic memory layer comprise at least one of cobalt (Co), iron (Fe), CoFeAl, CoFeB, CoMnSi, CoPd, CoPt, CoTb, FePd, FePt, GdCo, MnGa, MnGe, MnSi, Mn 3 Ga, Mn 3 Ge, Mn 3 Sn, TeFeCo, [Co/Ni]n multilayers, [Co/Pd]n multilayers, [Co/Pt]n multilayers, any alloy thereof, or any combination thereof, and

wherein ‘n’ is greater than or equal to 1 and less than or equal to 10.

13. The magneto-electronic device of claim 8 , wherein the first magnetic memory layer and the second magnetic memory layer comprise ferromagnetic material with the in-plane magnetic anisotropy.

14. The magneto-electronic device of claim 13 , wherein the first magnetic memory layer and the second magnetic memory layer comprise at least one of cobalt (Co), iron (Fe), CoFe, CoFeAl, CoFeB, CoMnSi, NiFe, any alloy thereof, or any combination thereof.

15. The magneto-electronic device of claim 8 , wherein the insulating layer comprises at least one of AlO x , boron nitride (BN), HfO 2 , magnesium oxide (MgO), boron-doped MgO, silicon oxide (SiO, SiO 2 ), tantalum oxide (TaO 2 , Ta 2 O 5 ), stoichiometric or non-stoichiometric titanium oxide (TiO, TiO 2 , Ti 2 O 3 ), or zirconium oxide (ZrO, ZrO 2 ).

16. The magneto-electronic device of claim 8 , further comprising:

a substrate;

wherein the SOT generator layer is on the substrate.

17. The magneto-electronic device of claim 8 , further comprising:

a capping layer on the second magnetic memory layer.

18. A magneto-electronic device, comprising:

a first layer;

a second layer on the first layer;

a third layer on the second layer; and

a fourth layer on the third layer;

wherein the first layer comprises topological insulator material,

wherein the second layer comprises first ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy,

wherein the third layer comprises insulating material,

wherein the fourth layer comprises second ferromagnetic material with either the perpendicular magnetic anisotropy or the in-plane magnetic anisotropy, and

wherein the magneto-electronic device is configured to originate spin current in the topological insulator material using a switching current within the first layer.

19. The magneto-electronic device of claim 18 , further comprising:

a substrate;

wherein the first layer is on the substrate.

20. The magneto-electronic device of claim 18 , further comprising:

a fifth layer on the fourth layer;

wherein the fifth layer comprises a capping layer.