Photodetection device having a coating comprising trenches with a wide bandgap coating and production method

1. A photodetection device comprising:

a plurality of diodes arranged in an array of diodes, wherein each of said diodes includes:

an absorption region having a first bandgap energy in an absorption layer supported by a substrate,

a collection region which has a first doping type, and

a contact region of an electrically conductive stud with the collection region,

wherein trenches separate adjacent diodes in the array of diodes, each of said trenches comprising flanks and a bottom that result from etching the absorption layer and which delimit an internal face of the trench on the substrate side and which delimit an external face of the trench,

wherein a passivation layer covers the array of diodes except for the trenches and the contact region of each of said diodes,

wherein a stabilization layer is arranged along the internal face of each of said trenches, the stabilization layer resulting from a transformation of the flanks and the bottom of each of said trenches made by incorporating and diffusing an impurity, the stabilization layer having a second doping type opposite to the first doping type and a bandgap energy higher than the first bandgap energy.

2. The photodetection device according to claim 1 , wherein the second doping type is a P type doping.

3. The photodetection device according to claim 1 , wherein each of said trenches that separates adjacent diodes in the array separates the absorption regions of the adjacent diodes and is devoid of contact with the collection regions of the adjacent diodes.

4. The photodetection device according to claim 1 , wherein the absorption regions of each of said diodes rest on an intermediate layer which has a same doping type and a same doping level as the absorption region of each of said diodes and a bandgap energy higher than the first bandgap energy.

5. The photodetection device according to claim 4 , wherein the stabilization layer arranged along the internal face of each of said trenches extends through at least one part of the intermediate layer.

6. The photodetection device according to claim 1 , wherein the stabilization layer extends from the flanks of each of said trenches on a given distance underneath the passivation layer.

7. The photodetection device according to claim 1 , wherein each of said diodes further comprises, on an opposite side to the substrate, a region located above the absorption region which has a same doping type as the absorption region and a bandgap energy higher than that of the absorption region.

8. The photodetection device according to claim 1 , wherein the absorption region of each of said diodes has a doping level lower than 5*10 16 at/cm 3 .

9. The photodetection device according to claim 1 , wherein the external face of each of said trenches is covered with a metallization layer.

10. The photodetection device according to claim 9 , wherein the metallization layer that covers the external face of each of said trenches is in electric contact with a peripheral substrate contact arranged on at least one side of the array of diodes.

11. A method for manufacturing a photodetection device including a plurality of diodes arranged in an array of diodes, wherein each of said diodes includes an absorption region having a first bandgap energy in an absorption layer supported by a substrate, a collection region which has a first doping type, and a contact region of an electrically conductive stud with the collection region, the method comprising:

forming trenches separating adjacent diodes in the array of diodes, each of said trenches including flanks and a bottom which result from etching the absorption layer and which delimit an internal face of the trench on the substrate side and an external face of the trench;

forming a passivation layer which covers the array of diodes except for the trenches and the contact region of each of said diodes;

forming a stabilization layer along the internal face of each of said trenches which comprises transforming the bottom and the flanks of each of said trenches by incorporating and diffusing an impurity, the stabilization layer having a second doping type opposite to the first doping type and a bandgap energy higher than the first bandgap energy.