Organosilane precursors for ALD/CVD silicon-containing film applications and methods of using the same
Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiH x (RN—(CR) n —NR) y (NRR) z wherein R may each independently be H, a C 1 to C 6 alkyl group, or a C 3 -C 20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x≠3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.
1. A Si-containing film forming composition comprising an organosilane precursor having the formula:
SiH x (RN—(CR) n —NR) y (NRR) z ;
wherein each R is independently selected from the group consisting of H, a C 1 to C 6 alkyl group, and a C 3 -C 20 aryl or heterocycle group; n=1 or 3; x=0, 1, or 2; y=1 or 2; and z=1, 2, or 3; and x+y+z=4, provided that x≠2 when y=2.
2. The Si-containing film forming composition of claim 1 , wherein n=1, x=2, y=1, z=1, and the organosilane precursor has the formula:
3. The Si-containing film forming composition of claim 2 , wherein the organosilane precursor is selected from the group consisting of:
4. The Si-containing film forming composition of claim 3 , wherein the organosilane precursor is SiH 2 (NMe 2 )(iPr-amd) or SiH 2 (NEt 2 )(iPr-amd).
5. The Si-containing film forming composition of claim 1 , wherein n=1, x=1, y=1, z=2, and the organosilane precursor has the formula:
6. The Si-containing film forming composition of claim 5 , wherein the organosilane precursor is selected from the group consisting of:
7. The Si-containing film forming composition of claim 6 , wherein the organosilane precursor is SiH(NMe 2 ) 2 (iPr-amd).
8. The Si-containing film forming composition of claim 1 , wherein n=3, x=2, y=1, z=1, and the organosilane precursor has the formula:
9. The Si-containing film forming composition of claim 8 , wherein the organosilane precursor is selected from the group consisting of:
10. The Si-containing film forming composition of claim 1 , wherein n=3, x=1, y=1, z=2, and the organosilane precursor has the formula:
11. The Si-containing film forming composition of claim 1 , wherein the organosilane precursor is selected from the group consisting of:
12. The Si-containing film forming composition of claim 1 , wherein n=1, x=1, y=2, z=1, and the organosilane precursor has the formula:
13. The Si-containing film forming composition of claim 12 , wherein the organosilane precursor is selected from the group consisting of:
14. A method of depositing a Si-containing layer on a substrate, the method comprising:
introducing a Si-containing film forming composition of claim 1 into a reactor having a substrate disposed therein; and
depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a vapor deposition method.
15. The method of claim 14 , further comprising introducing into the reactor a reactant, wherein the reactant is selected from the group consisting of H 2 , NH 3 , (SiH 3 ) 3 N, hydridosilanes, chlorosilanes, chloropolysilanes, alkysilanes, hydrazines, organic amines, pyrazoline, pyridine, B-containing molecules, alkyl metals, radical species thereof, and mixtures thereof.