Edge chamfering methods
Processes of chamfering and/or beveling an edge of a glass substrate of arbitrary shape using lasers are described herein. Two general methods to produce chamfers on glass substrates are the first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser to create perforations within the glass; followed by an ion exchange.
1. A method of chamfering a material comprising:
focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction;
directing the laser beam focal line into the material at a first angle of incidence to the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material;
translating the material and the laser beam relative to each other, thereby laser drilling a plurality of defect lines along a first plane at the first angle within the material;
directing the laser beam focal line into the material at a second angle of incidence to the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material;
translating the material and the laser beam relative to each other, thereby laser drilling a plurality of defect lines along a second plane at the second angle within the material, the second plane intersecting the first plane, and
separating the material along the first plane and the second plane by applying a strengthening ion-exchange process to the material, wherein during separating of the material along the first plane and the second plane the strengthening ion-exchange process is applied to the material for time t, wherein 10 min≤t≤120 min, further comprising subjecting the material to a second ion-exchange process to strengthen the material and improve the resistance of material to subsequent damage.
2. The method of claim 1 , wherein directing the laser beam focal line into the material at a first angle of incidence to the material is directed to a first surface of the material and directing the laser beam focal line into the material at a second angle of incidence to the material is directed to a second surface of the material.
3. The method of claim 2 , wherein the material separates along the first plane and the second plane to define a chamfered edge.
4. The method of claim 1 , further comprising:
directing the laser beam focal line into the material at a third angle of incidence to the material, the laser beam focal line generating an induced absorption within the material; the induced absorption producing a defect line along the laser beam focal line within the material; and
translating the material and the laser beam relative to each other, thereby laser drilling a plurality of defect lines along a third plane at the third angle within the material;
wherein at least two of the first plane, second plane, and third plane intersect.
5. The method of claim 4 , wherein the material separates along the first plane, the second plane, and the third plane to define a chamfered edge.
6. The method of claim 4 , wherein at least one of the first angle, second angle, and third angle is perpendicular to a surface of the material.
7. The method of claim 1 , wherein the pulse duration is in a range of between greater than about 1 picosecond and less than about 100 picoseconds.
8. The method of claim 7 , wherein the pulse duration is in a range of between greater than about 5 picoseconds and less than about 20 picoseconds.
9. The method of claim 1 , wherein the repetition rate is in a range of between about 1 kHz and 2 MHz.
10. The method of claim 9 , wherein the repetition rate is in a range of between about 10 kHz and 650 kHz.
11. The method of claim 1 , wherein the pulsed laser beam has an average laser power measured at the material greater than 40 μJ per mm thickness of the original material.
12. The method of claim 1 , wherein the pulses are produced in bursts of at least two pulses separated by a duration in a range of between 1 nsec and 50 nsec, and the burst repetition frequency is in a range of between 1 kHz and 650 kHz.
13. The method of claim 12 , wherein the pulses are separated by a duration of 20 nsec.
14. The method of claim 1 , wherein the pulsed laser beam has a wavelength selected such that the material or the work piece is substantially transparent at this wavelength.
15. The method of claim 1 , wherein the laser beam focal line has a length in a range of between about 0.1 mm and about 100 mm.
16. The method of claim 1 , wherein the laser beam focal line has an average spot diameter in a range of between about 0.1 μm and about 5 μm.
17. The method of claim 1 , wherein the material or the work piece comprises non-strengthened glass.
18. The method of claim 1 , wherein during separating of the material along the first plane and the second plane the strengthening ion-exchange process is applied to the material for time t, wherein 20 min≤t≤60 min.
19. The method of claim 1 , wherein during separating of the material along the first plane and the second plane the strengthening ion-exchange process is applied to the material at a temperature of 400° to 500° C.
20. The method of claim 1 , wherein the laser beans focal line has a length extending along the beam propagation direction that is in a range of between about 0.1 mm and about 100 mm and an average spot diameter that is in a range of between about 0.1 μm and about 5 μm.
21. A method of chamfering a material comprising:
focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction; and
laser drilling a plurality of defect lines along each of N planes within the material by, for each of the N planes:
directing the laser beam focal line into the material at a corresponding angle of incidence to the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material; and
translating the material and the laser beam relative to each other, thereby laser drilling the plurality of defect lines along the corresponding plane of the N planes; and
separating the material along at least one of said N planes by applying an ion-exchange process to the material.
22. A method of making a chamfered and strengthened glass article, comprises:
(i) providing a glass article having a select contour and a glass surface, and a perforated edge and/or corner;
(ii) removing a portion of the glass adjacent to the perforated edge and/or corner by subjecting the article to a first ion-exchange process to complete a full-body cut between perforations;
(iii) rinsing the glass article,
(iv) air drying the rinsed glass article; and then
(v) subjecting the glass article to a second ion-exchange process to strengthen the glass article and improve the resistance of the glass article to subsequent damage.
23. The method of making a chamfered and strengthened glass article, according to claim 22 , wherein: (i) the step of removing the portion of the glass adjacent to the perforated edge and/or corner is performed by subjecting the article to the ion-exchange for 20 min-60 min; and (ii) the glass article is subjected to the second ion-exchange process for at least 4 hrs.