Via-based vertical capacitor and resistor structures
Certain aspects of the present disclosure provide an integrated circuit (IC) that includes at least one of a via-based vertical capacitor structure or a via-based vertical resistor structure. The IC includes a substrate oriented in a horizontal plane, electrically conductive layers disposed above the substrate, and electrically insulative layers disposed above the substrate and interposed between the plurality of electrically conductive layers. At least one of the vertical capacitor structure or the vertical resistor structure is disposed in the electrically conductive layers and the electrically insulative layers.
1. An integrated circuit including a vertical capacitor structure, comprising:
a substrate oriented in a horizontal plane;
a plurality of electrically conductive layers disposed above the substrate;
a plurality of electrically insulative layers disposed above the substrate and interposed between the plurality of electrically conductive layers; and
the vertical capacitor structure disposed in the plurality of electrically conductive layers and the plurality of electrically insulative layers, the vertical capacitor structure comprising:
a first interconnection element disposed above the substrate;
a second interconnection element disposed above the first interconnection element;
one or more first fingers coupled to the first interconnection element and extending therefrom through a first set of the plurality of electrically conductive layers and through a first set of the plurality of electrically insulative layers, in a first vertical direction with respect to the horizontal plane of the substrate; and
one or more second fingers coupled to the second interconnection element and extending therefrom through a second set of the plurality of electrically conductive layers and through a second set of the plurality of electrically insulative layers, in a second vertical direction with respect to the horizontal plane of the substrate, the first and second fingers having a capacitance therebetween.
2. The integrated circuit of claim 1 , wherein each of the one or more first fingers comprises one or more vias extending through the first set of the plurality of electrically conductive layers and through the first set of the plurality of electrically insulative layers, in the first vertical direction.
3. The integrated circuit of claim 2 , wherein the one or more vias comprise a plurality of stacked vias.
4. The integrated circuit of claim 2 , wherein the one or more vias are electrically isolated from other electrically conductive elements in each of the plurality of electrically conductive layers.
5. The integrated circuit of claim 1 , wherein each of the one or more second fingers comprises one or more vias extending through the second set of the plurality of electrically conductive layers and through the second set of the plurality of electrically insulative layers, in the second vertical direction.
6. The integrated circuit of claim 5 , wherein the one or more vias are electrically isolated from other electrically conductive elements in each of the plurality of electrically conductive layers.
7. The integrated circuit of claim 1 , wherein each of the plurality of electrically conductive layers comprises a metal, metal alloy, or silicon alloy.
8. The integrated circuit of claim 7 , wherein each of the plurality of electrically insulative layers comprises a dielectric.
9. The integrated circuit of claim 1 , wherein at least one of the first interconnection element or the second interconnection element comprises a metal, metal alloy, or silicon alloy.
10. The integrated circuit of claim 1 , wherein at least one of the first interconnection element or the second interconnection element comprises an electrically conductive trace.
11. The integrated circuit of claim 10 , wherein the electrically conductive trace is coupled to an electrically conductive element in one of the plurality of electrically conductive layers.
12. The integrated circuit of claim 1 , wherein the first interconnection element is disposed in one of the plurality of electrically conductive layers and wherein the second interconnection element is disposed in another one of the plurality of electrically conductive layers, further away from the substrate than the one of the plurality of electrically conductive layers.