Seam healing of metal interconnects

1. An integrated circuit (IC) die comprising:

a substrate of a semiconductor;

a dielectric material on the substrate; and

an interconnect in a recess of the dielectric material, wherein the interconnect includes a metal and hydrogen in the metal, and wherein the metal has a higher melting point than copper.

2. The IC die of claim 1 , wherein the interconnect includes hydrogen in a concentration of less than 5% by atomic weight.

3. The IC die of claim 2 , wherein the concentration of hydrogen is greater than 8E21 atoms per cubic centimeter.

4. The IC die of claim 1 , wherein the metal includes one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), or cobalt (Co).

5. The IC die of claim 1 , wherein the metal includes one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), cobalt (Co), rhenium (Re), iron (Fe), osmium (Os), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), or technetium (Tc).

6. The IC die of claim 1 , wherein the interconnect is a dual-damascene structure.

7. The IC die of claim 1 , wherein the interconnect is formed by heating of the metal in the presence of a reactive gas that includes hydrogen.

8. A computing device comprising:

a circuit board; and

a die coupled with the circuit board, the die including:

a substrate of a semiconductor,

a dielectric material on the substrate, and

an interconnect in a recess of the dielectric material, wherein the interconnect includes a metal and hydrogen in the metal, and wherein the metal has a higher melting point than copper.

9. The computing device of claim 8 , wherein the interconnect includes hydrogen in a concentration of less than 5% by atomic weight.

10. The computing device of claim 9 , wherein the concentration of hydrogen is greater than 8E21 atoms per cubic centimeter.

11. The computing device of claim 8 , wherein the metal includes one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), or cobalt (Co).

12. The computing device of claim 8 , wherein the interconnect is a dual-damascene structure.

13. The computing device of claim 8 , wherein the interconnect is formed by heating of the metal in the presence of a reactive gas that includes hydrogen.

14. The computing device of claim 8 , wherein:

the die is a processor; and

the computing device further includes one or more of an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, a Geiger counter, an accelerometer, a gyroscope, a speaker, or a camera.

15. A method comprising:

conformally depositing a metal into a recess in a dielectric material to form an interconnect, wherein conformally depositing the metal creates a seam or void in the deposited metal within or adjacent to the recess, wherein conformally depositing the metal comprises depositing at least one of ruthenium (Ru), molybdenum (Mo), tungsten (W), cobalt (Co), rhenium (Re), iron (Fe), osmium (Os), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr) or technetium (Tc); and

heating the metal in the presence of a reactive gas to remove the seam or void, wherein the reactive gas includes hydrogen.

16. The method of claim 15 , wherein heating the metal comprises exposing the metal to a temperature between 300° C. and 800° C.

17. The method of claim 16 , wherein heating the metal is performed at atmospheric pressure or higher.