Semiconductor device, electrical energy measurement instrument, and manufacturing method of semiconductor device
According to one embodiment, a semiconductor device 1 includes an Si substrate 11 , an inductor 12 formed in wiring layers disposed above the Si substrate 11 , and a shield 13 formed so as to surround the inductor 12 , in which the shield 13 includes metals 105 to 109 formed in, among the wiring layers, a layer in which the inductor 12 is formed and a layer above that layer, and a silicide 104 formed between the Si substrate 11 and the wiring layers above the Si substrate 11.
1. A semiconductor device comprising:
a substrate;
an inductor formed in wiring layers disposed above the substrate; and
a shield formed so as to surround the inductor, wherein the shield comprises:
a first metal formed in, among the wiring layers, a layer in which the inductor is formed and a layer above that layer; and
a silicide formed between the substrate and the wiring layers above the substrate;
wherein the shield further comprises a second metal formed in, among the wiring layers, a wiring layer located between the layer in which the inductor is formed and the silicide in addition to the first metal and the silicide,
wherein the silicide comprises a first gap area in a plan view, and the second metal comprises a second gap area and is disposed so as to cover a part or all of the first gap area of the silicide in the plan view,
wherein
the silicide comprises a plurality of partial silicide pieces arranged in a matrix pattern in the plan view, and
the second metal comprises a plurality of partial metal pieces arranged in a matrix pattern and is disposed so as to cover a part of the first gap area of the silicide in the plan view.
2. A semiconductor device comprising:
a substrate;
an inductor formed in wiring layers disposed above the substrate; and
a shield formed so as to surround the inductor, wherein the shield comprises:
a first metal formed in, among the wiring layers, a layer in which the inductor is formed and a layer above that layer; and
a silicide formed between the substrate and the wiring layers above the substrate;
wherein the shield further comprises a second metal formed in, among the wiring layers, a wiring layer located between the layer in which the inductor is formed and the silicide in addition to the first metal and the silicide,
wherein the silicide comprises a first gap area in a plan view, and the second metal comprises a second gap area and is disposed so as to cover a part or all of the first gap area of the silicide in the plan view,
wherein
the silicide is formed in a grid pattern in the plan view, and
the second metal is formed in a grid pattern and is disposed so as to cover a part of the first gap area of the silicide in the plan view.
3. The semiconductor device according to claim 2 , further comprising a polysilicon formed above the substrate, wherein
the silicide is formed on a surface of the polysilicon.
4. The semiconductor device according to claim 3 , further comprising an STI (Shallow Trench Isolation) formed above the substrate, wherein
the polysilicon is formed on a surface of the STI.
5. The semiconductor device according to claim 2 , further comprising an N-type or P-type diffusion layer formed above the substrate, wherein
the silicide is formed on a surface of the diffusion layer.
6. The semiconductor device according to claim 2 , further comprising a plurality of pads, wherein
the inductor is disposed in a spiral pattern along a periphery of the substrate above the substrate, and
the plurality of pads are disposed inside the inductor above the substrate.
7. The semiconductor device according to claim 2 , further comprising a plurality of pads, wherein
the inductor is disposed in a spiral pattern along a periphery of the substrate above the substrate, and
the plurality of pads are disposed outside the inductor above the substrate.
8. An electrical energy measurement instrument comprising:
a semiconductor device according to claim 2 , the semiconductor device comprising the inductor configured to detect a change in strength of a magnetic field, the change in strength of a magnetic field occurring according to a current flowing through a power line;
an amplification circuit configured to amplify a detection result of the inductor;
an AD converter configured to convert an amplification result of the amplification circuit into a digital signal; and
an arithmetic processing unit configured to calculate electrical energy consumed by the current flowing through the power line based on the digital signal.