Method for forming film and method for forming aluminum nitride film
The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.
1. A method for forming a film, comprising:
placing a substrate on a carrying base;
performing a first pre-sputtering using a target;
performing a second pre-sputtering using the target after the first pre-sputtering, wherein: while performing the first pre-sputtering and the second pre-sputtering, a shielding plate is positioned between the target and the substrate, and the first pre-sputtering and the second pre-sputtering have different process parameters;
moving the shielding plate away after the second pre-sputtering; and
performing a main sputtering on the substrate using the target to form a film on the substrate, wherein no power is applied to the target after the second pre-sputtering and before the main sputtering.
2. The method according to claim 1 , wherein: a gas introduced during the first pre-sputtering is different from a gas introduced during the second pre-sputtering.
3. The method according to claim 1 , wherein: a gas introduced during the second pre-sputtering is the same as a gas introduced during the main sputtering.
4. The method according to claim 1 , wherein: sputtering power applied to the target during the first pre-sputtering is different from sputtering power applied to the target during the second pre-sputtering.
5. The method according to claim 4 , wherein: the sputtering power applied to the target during the second pre-sputtering is smaller than the sputtering power applied to the target during the first pre-sputtering.
6. The method according to claim 4 , wherein: the sputtering power applied to the target during the first pre-sputtering is equal to sputtering power applied to the target during the main sputtering.
7. The method according to claim 1 , wherein: no power is applied to the target after the first pre-sputtering and before the second pre-sputtering.
8. The method according to claim 1 , further comprising:
performing the main sputtering after the substrate is moved to a process position; and
applying power to the target to perform the main sputtering, wherein: no power is applied to the target after the second pre-sputtering is performed and before the substrate is moved to the process position.
9. A method for forming an aluminum nitride film, comprising:
placing a substrate on a carrying base;
performing a first pre-sputtering using a target containing aluminum;
performing a second pre-sputtering using the target containing aluminum after the first pre-sputtering, wherein: while performing the first pre-sputtering and the second pre-sputtering, a shielding plate is positioned between the target containing aluminum and the substrate, and the first pre-sputtering and the second pre-sputtering have different process parameters;
moving the shielding plate away after the second pre-sputtering; and
performing a main sputtering on the substrate using the target containing aluminum to form an aluminum nitride film on the substrate, wherein no power is applied to the target containing aluminum after the second pre-sputtering and before the main sputtering.
10. The method according to claim 9 , wherein: a gas introduced during the first pre-sputtering includes a gas containing nitrogen and an inert gas.
11. The method according to claim 9 , wherein: a gas introduced during the second pre-sputtering includes a gas containing nitrogen, a gas containing oxygen and an inert gas.
12. The method according to claim 9 , wherein: sputtering power applied to the target containing aluminum during the first pre-sputtering is different from sputtering power applied to the target containing aluminum during the second pre-sputtering.
13. The method according to claim 12 , wherein: the sputtering power applied to the target containing aluminum during the second pre-sputtering is smaller than the sputtering power applied to the target containing aluminum during the first pre-sputtering.
14. The method according to claim 12 , wherein: the sputtering power applied to the target containing aluminum during the first pre-sputtering is equal to sputtering power applied to the target containing aluminum during the main sputtering.
15. The method according to claim 12 , wherein: the sputtering power applied to the target containing aluminum during the first pre-sputtering is between 2500 watts and 4000 watts.
16. The method according to claim 12 , wherein: the sputtering power applied to the target containing aluminum during the second pre-sputtering is between 200 watts and 4000 watts.
17. The method according to claim 9 , wherein: no power is applied to the target containing aluminum after the first pre-sputtering and before the second pre-sputtering.
18. The method according to claim 9 , further comprising:
performing the main sputtering after the substrate is moved to a process position; and
applying power to the target containing aluminum to perform the main sputtering, wherein no power is applied to the target containing aluminum after the second pre-sputtering is performed and before the substrate is moved to the process position.