Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layer
Embodiments of the present disclosure generally relate to a spin torque oscillator device (STO) including a high damping field generation layer or a damping enhancing capping layer for use in microwave assisted magnetic recording (MAMR) write heads. In one embodiment, a STO device for a MAMR write head includes a spin polarization layer, a spacer layer over the spin polarization layer, and a field generation layer over the spacer layer. The field generation layer has a damping in a range from about 0.5% to about 20%.
1. A spin torque oscillator (STO) device for a microwave assisted magnetic recording (MAMR) write head, comprising:
a spin polarization layer;
a spacer layer over the spin polarization layer; and
a field generation layer over the spacer layer, the field generation layer having a damping in a range from about 0.5% to about 20%, wherein the field generation layer comprises a heavy metal in an atomic percent content in a range from about 2% to about 10% and a magnetic material.
2. The STO device of claim 1 , wherein the heavy metal is a rare earth metal selected from a group consisting of holmium, dysprosium, terbium, samarium, and combinations thereof.
3. The STO device of claim 1 , wherein the heavy metal is selected from a group consisting of platinum (Pt), palladium (Pd), iridium (Ir), rhodium (Rh), ruthenium (Ru), rhenium (Re), osmium (Os), tantalum (Ta), hafnium (Hf), and combinations thereof.
4. A disk drive comprising the STO device of claim 1 .
5. The STO device of claim 1 , further comprising a damping enhancing capping layer on the field generation layer.
6. The STO device of claim 5 , wherein the damping enhancing capping layer comprises a non-magnetic material.
7. A spin torque oscillator (STO) device for a microwave assisted magnetic recording (MAMR) write head, comprising:
a spin polarization layer over a seed layer;
a spacer layer over the spin polarization layer; and
a field generation layer over the spacer layer, the field generation layer comprising one or more magnetic layers and one or more layers selected from a group consisting of a rare earth metal layer and a heavy metal layer, the field generation layer having a damping in a range from about 0.5% to about 20%, wherein the one or more magnetic layers each comprises Fe, Co, FeCo, NiFe, CoFeAl, CoFeGe, CoMnGe, CoFeSi, CoMnSi, and combinations thereof.
8. The STO device of claim 7 , wherein the one or more layers is one or more rare earth metal layers.
9. The STO device of claim 8 , wherein the one or more rare earth metal layers each comprises a rare earth metal selected from a group consisting of holmium, dysprosium, terbium, samarium, and combinations thereof.
10. The STO device of claim 7 , wherein the one or more layers is one or more heavy metal layers.
11. The STO device of claim 10 , wherein the one or more heavy metal layers each comprises a heavy metal selected from a group consisting of Pt, Pd, Ir, Rh, Ru, Re, Os, Ta, Hf, and combinations thereof.
12. A disk drive comprising the STO device of claim 7 .
13. A spin torque oscillator (STO) device for a microwave assisted magnetic recording (MAMR) write head, comprising:
a spin polarization means for imparting a spin torque;
a field generation means for generating a high-frequency magnetic field, the field generation means having a damping in a range from about 0.5% to about 20%; and
a damping enhancing capping layer on the field generation means.
14. The STO device of claim 13 , wherein the field generation means has a thickness of 5 nm or more at a media facing surface and the STO device has a track width of 30 nm or more at the media facing surface.
15. The STO device of claim 13 , wherein the spin polarization means has a saturation flux density (Bst) of about 2.0 nmT or more at a media facing surface.
16. The STO device of claim 13 , wherein the field generation means has a magnetic moment (Bs) of about 1.7T or greater.
17. A disk drive comprising the STO device of claim 13 .
18. The STO device of claim 7 , wherein the one or more magnetic layers and the one or more layers selected from the group consisting of the rare earth metal layer and the heavy metal layer form a multilayer structure, and wherein the multilayer structure has a total atomic percent content of rare earth metal between about 0.3% and 10%.
19. The STO device of claim 13 , wherein the damping enhancing capping layer comprises a high damping magnetic alloy material.
20. The STO device of claim 13 , wherein the damping enhancing capping layer comprises a magnetic material doped with a rare earth metal or a heavy metal.