Pre-read technique for multi-pass programming of flash memory
A flash memory device includes: a flash memory array; and control logic. The control logic is coupled to the flash memory array. The control logic is arranged to: program a plurality of memory cells of the flash memory array according to at least one first page of data in a first programming pass; sense the memory cells that are programmed in the first programming pass to obtain the at least one first page of data and preserve the at least one first page of data in a first register circuit inside the flash memory device before a second programming pass; and program the memory cells according to the at least one first page of data and a second page of data in the second programming pass.
1. A flash memory device, comprising:
a flash memory array;
a control logic, coupled to the flash memory array, and arranged to:
program a plurality of memory cells of the flash memory array according to at least one first page of data in a first programming pass;
sense states of the memory cells that are programmed in the first programming pass to obtain the at least one first page of data and preserve the at least one first page of data in a first register circuit inside the flash memory device before a second programming pass; and
program the memory cells according to the at least one first page of data and a second page of data in the second programming pass.
2. The flash memory device of claim 1 , wherein the control logic is configured to program the memory cells according to a lower page of data, a middle page of data and an upper page of data in the first programming pass.
3. The flash memory device of claim 2 , wherein the control logic is configured to sense the lower page of data, the middle page of data and the upper page of data from the memory cells that are programmed in the first programming pass and preserve the lower page of data, the middle page of data and the upper page of data in the first register circuit before the second programming pass.
4. The flash memory device of claim 3 , wherein in the second programming pass, the control logic is configured to program the memory cells according to the lower page of data, the middle page of data and the upper page of data preserved in the first register circuit and program the memory cells according to an extra page of data sent from a host controller.
5. The flash memory device of claim 3 , wherein the flash memory device has a second register circuit, and before the first programming pass, the flash memory device receives the at least one first page of data from a host controller and stores the at least one first page of data to the second register circuit; and before the second programming pass, the flash memory device obtains the at least one first page of data sensed from the memory cells and directly stores the sensed at least one first page of data to the first register circuit.
6. The flash memory device of claim 3 , wherein the control logic is configured to sense the lower page of data, the middle page of data and the upper page of data from the memory cells that are programmed in the first programming pass in a multi-ramping sense manner.
7. A method for performing a two-pass programming in a flash memory device having a flash memory array and control logic, the method comprising:
programming a plurality of memory cells of the flash memory array according to at least one first page of data in in a first programming pass;
sensing the memory cells that are programmed in the first programming pass to obtain the at least one first page of data and preserving the at least one first page of data in a first register circuit inside the flash memory device before a second programming pass; and
programming the memory cells according to the at least one first page of data and a second page of data in the second programming pass.
8. The method of claim 7 , wherein the step of programming the memory cells according to the at least one first page of data in the first programming pass comprises:
programming the memory cells according to a lower page of data, a middle page of data and an upper page of data in in the first programming pass.
9. The method of claim 8 , wherein the step of sensing the memory cells and preserve the at least one first page of data before the second programming pass comprises:
sensing the lower page of data, the middle page of data and the upper page of data from the memory cells that are programmed in the first programming pass; and
preserving the lower page of data, the middle page of data and the upper page of data in the first register circuit before the second programming pass.
10. The method of claim 9 , wherein the step of programming the memory cells according to the at least one first page of data and the second page of data in the second programming pass comprises:
in the second programming pass, programming the memory cells according to the lower page of data, the middle page of data and the upper page of data preserved in the first register circuit; and
programming the memory cells according to an extra page of data sent from a host controller.
11. The method of claim 9 , wherein the flash memory device has a second register circuit, and the method further comprises:
before the first programming pass, receiving the at least one first page of data from a host controller and storing the at least one first page of data to the second register circuit; and
before the second programming pass, obtaining the at least one first page of data sensed from the memory cells and directly storing the sensed at least one first page of data to the first register circuit.
12. The method of claim 9 , wherein the step of sensing the lower page of data, the middle page of data and the upper page of data comprising:
sensing the lower page of data, the middle page of data and the upper page of data that are programmed in the first programming pass in a multi-ramping sense manner.