Ion implanting method
View Patent ↗An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of N 2 H 4 , CH 3 N 2 H 3 , C 6 H 5 N 2 H 3 , CFCl 3 and C(CH3) 3 F.
1. An ion implanting method, the method comprising:
providing or receiving a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol, wherein the gas comprises NF 3 , NH 3 , N 2 H 4 , CH 3 N 2 H 3 , C 6 H 5 N 2 H 3 , CFCl 3 , C(CH 3 ) 3 F, or combinations thereof;
ionizing the gas to form a plurality of types of ions;
extracting at least one of the types of the ions from the plurality of types of the ions; and
directing said at least one of the types of the ions to implant a substance such that a doped region is formed in the substance, wherein directing said at least one of the types of the ions comprises:
forming a mask layer on the substance;
patterning the mask layer to expose a portion of the substance; and
directing said at least one of the types of the ions to implant the exposed portion of the substance.
2. The ion implanting method of claim 1 , wherein the gas comprises NF 3 .
3. The ion implanting method of claim 2 , wherein the gas further comprises NH 3 .
4. The ion implanting method of claim 1 , wherein the gas comprises NH 3 .
5. The ion implanting method of claim 1 , further comprising annealing the implanted substance after directing said at least one of the types of the ions.
6. The ion implanting method of claim 1 , wherein the bonding energy is ranged from about 230 kJ/mol to about 350 kJ/mol.
7. The ion implanting method of claim 1 , wherein extracting the at least one of the types of the ions comprises accelerating the at least one of the types of the ions.
8. The ion implanting method of claim 1 , wherein extracting the at least one of the types of the ions comprises decelerating the at least one of the types of the ions.
9. The ion implanting method of claim 1 , wherein the gas comprises NH 3 and NF 3 and a molar ratio of NH 3 :NF 3 ranges from about 0.05:1 to about 0.25:1.
10. An ion implanting method, comprising:
providing or receiving a substance;
providing a gas comprising nitrogen atoms, fluorine atoms and hydrogen atoms, wherein the gas includes NH 3 and NF 3 and a molar ratio of NH 3 :NF 3 ranges from about 0.05:1 to about 0.25:1;
ionizing the gas to form nitrogen ions, fluorine ions and hydrogen ions; and
directing at least one of the nitrogen ions and the fluorine ions to implant the substance.
11. The ion implanting method of claim 10 , wherein the gas has a bonding energy ranged from about 220 to about 450 kJ/mol.
12. The ion implanting method of claim 10 , wherein directing said at least one of the types of the ions comprises:
forming a mask layer on the substance;
patterning the mask layer to expose a portion of the substance; and
directing said at least one of the types of the ions to implant the exposed portion of the substance.
13. The ion implanting method of claim 10 , wherein the substance comprises a plurality of active regions and an isolation structure separating two adjacent ones of the active regions, wherein directing said at least one of the types of the ions comprises:
directing said at least one of the types of the ions to the active regions to implant the active regions.
14. The ion implanting method of claim 10 , further comprising annealing the implanted substance after directing said at least one of the types of the ions to implant the substance.
15. The ion implanting method of claim 10 , further comprising extracting the nitrogen ions or the fluorine ions.
16. An ion implanting method, comprising:
providing or receiving a gas having a bonding energy ranged from about 220 to about 450 kJ/mol, wherein the gas comprises NF 3 and NH 3 , and a molar ratio of NH 3 :NF 3 ranges from about 0.05:1 to about 0.25:1;
ionizing the gas to form a plurality of types of ions;
extracting one of the types of the ions to form an ion beam;
accelerating or decelerating the ions of the ion beam; and
directing the ions of the ion beam to implant a substance such that a doped region is formed in the substance.
17. The ion implanting method of claim 16 , wherein directing said at least one of the types of the ions comprises:
forming a mask layer on the substance;
patterning the mask layer to expose a portion of the substance; and
directing said at least one of the types of the ions to implant the exposed portion of the substance.
18. The ion implanting method of claim 16 , wherein the gas comprises nitrogen atoms, hydrogen atoms and carbon atoms.
19. The ion implanting method of claim 16 , wherein the gas further comprises CH 3 N 2 H 3 or C 6 H 5 N 2 H 3 .
20. The ion implanting method of claim 16 , wherein the gas further comprises N 2 H 4 , CH 3 N 2 H 3 , C 6 H 5 N 2 H 3 , CFCl 3 and C(CH 3 ) 3 F.