Two-stage adiabatically coupled photonic systems
In an example, a photonic system includes a Si PIC with a Si substrate, a SiO 2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO 2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO 2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.
1. A coupled system, comprising:
a silicon (Si) photonic integrated circuit (PIC), comprising:
a Si substrate,
a silicon dioxide (SiO 2 ) box formed on the Si substrate;
a first layer formed above the SiO 2 box, the first layer including a first silicon nitride (SiN) waveguide with an untapered end portion and a tapered end that begins where the untapered end portion of the first SiN waveguide ends, the first layer further including a second SiN waveguide with a tapered end;
a second layer formed above the SiO 2 box and below the first layer, the second layer including a Si waveguide with an untapered end portion and a tapered end that begins where the untapered end portion of the Si waveguide ends;
an interposer comprising an interposer waveguide;
wherein:
the untapered end portion of the first SiN waveguide is aligned in two orthogonal directions with the tapered end of the Si waveguide such that the untapered end portion of the first SiN waveguide overlaps in the two orthogonal directions and is parallel to the tapered end of the Si waveguide;
the tapered end of the first SiN waveguide is aligned in the two orthogonal directions with the untapered end portion of the Si waveguide such that the tapered end of the first SiN waveguide overlaps in the two orthogonal directions and is parallel to the untapered end portion of the Si waveguide; and
the tapered end of the second SiN waveguide is adiabatically coupled to a coupler portion of the interposer waveguide.
2. The Si PIC of claim 1 , further comprising an Echelle grating wavelength division demultiplexer (WDM demux) formed in the first layer, wherein:
an output of the Echelle grating WDM demux is optically coupled to the untapered end portion of the first SiN waveguide;
the Si waveguide is configured to accept a multimode optical signal from the first SiN waveguide that is received from the output of the Echelle grating; and
an input of the Echelle grating WDM demux is coupled to the second SiN waveguide to receive an optical signal adiabatically coupled from the interposer waveguide to the second SiN waveguide.
3. A coupled system comprising:
a first waveguide with a silicon (Si) core having a first refractive index n 1 and a tapered end;
a plurality of second waveguides including a second output waveguide and a plurality of second input waveguides, each with a silicon nitride (SiN) core having a second refractive index n 2 that is less than the first refractive index n 1 , wherein the tapered end of the first waveguide is adiabatically coupled to a coupler portion of the second output waveguide;
an interposer comprising a third waveguide with a coupler portion and a core having a third refractive index n 3 that is less than the second refractive index n 2 , wherein a tapered end of one of the plurality of second waveguides is adiabatically coupled to the coupler portion of the third waveguide of the interposer;
a wavelength division multiplexer (WDM mux) with a plurality of inputs each coupled to a corresponding one of the plurality of second input waveguides and an output coupled to the second output waveguide; and
a plurality of semiconductor lasers, wherein each semiconductor laser of the plurality of semiconductor lasers is optically coupled to a different corresponding one of the plurality of second input waveguides.
4. The coupled system of claim 3 , wherein optical signals output by the plurality of semiconductor lasers are received by the WDM mux through the plurality of second input waveguides and multiplexed together by the WDM mux to form a multiplexed optical signal that is output by the WDM mux through the second output waveguide.
5. The coupled system of claim 3 , wherein the coupled system further comprises:
a plurality of third waveguides included in the interposer in addition to the third waveguide, each of the plurality of third waveguides having the third refractive index n 3 and a coupler portion, wherein the coupler portion of each of the plurality of third waveguides is adiabatically coupled to a tapered end of a corresponding one of the plurality of second input waveguides;
a plurality of first lenses, each positioned in a corresponding optical path between a corresponding one of the plurality of semiconductor lasers and an input end of a corresponding one of the plurality of third waveguides;
a plurality of optical isolators, each positioned in the corresponding optical path after the corresponding one of the plurality of first lenses; and
a plurality of second lenses, each positioned in the corresponding optical path after the corresponding one of the plurality of optical isolators such that each of the plurality of semiconductor lasers is optically coupled to a corresponding one of the plurality of second input waveguides through a corresponding one of the plurality of first lenses, a corresponding one of the plurality of optical isolators, and a corresponding one of the plurality of second lenses.