System and method for performing nano beam diffraction analysis
A system for performing diffraction analysis, includes a mill for removing a surface portion of a sample, and an analyzer for performing diffraction analysis on the milled sample.
1. A system for performing diffraction analysis, comprising:
a broad beam ion mill for removing a surface portion from plural parallel sides of a sample to expose an underlying surface of the sample; and
an analyzer for performing diffraction analysis on the underlying surface of the sample.
2. The system of claim 1 , further comprising:
a focused ion beam (FIB) device for preparing the sample, the mill removing a surface portion of the prepared sample.
3. The system of claim 2 , wherein the diffraction analysis comprises nano beam diffraction (NBD) analysis, the sample comprises a transmission electron microscopy (TEM) sample, the broad beam ion mill removes the surface portion by milling the prepared sample, and the analyzer comprises a strain analyzer.
4. The system of claim 3 , wherein the analyzer performs the NBD analysis on the milled sample to acquire diffraction data.
5. The system of claim 4 , wherein the milling of the TEM sample exposes the underlying surface of the TEM sample, and the strain analyzer uses a TEM camera image resolution of at least 4000 ×4000 pixels to acquire the diffraction data on the underlying surface.
6. The system of claim 4 , wherein the surface portion removed by the broad beam ion mill comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.
7. The system of claim 4 , wherein the TEM sample comprises a parallel-sided sample, and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.
8. The system of claim 4 , wherein the surface portion comprises a thickness in a range from 1 nm to 45 nm.
9. The system of claim 4 , wherein the surface portion comprises at least 10% of a thickness of the TEM sample, and
wherein the diffraction data comprises a sensitivity which is less than 0.1%.
10. The system of claim 4 , wherein the sample comprises a sample from a structure, and the structure comprises one of a fin field effect transistor (finFET) and a vertical field effect transistor (vFET).
11. The system of claim 4 , wherein the broad beam ion mill is operated at a current in a range from 120 μA to 150 μA and a voltage in a range from 500 eV to 900 eV, and utilizes an argon ion beam having a size in a range from 0.5 μm to 1.5 μm.
12. A method of performing diffraction analysis, comprising:
removing a surface portion from plural parallel sides of a sample using a broad beam ion mill to expose an underlying surface of the sample; and
performing diffraction analysis on the underlying surface of the sample.
13. The method of claim 12 , further comprising:
before removing the surface portion of the sample, preparing the sample.
14. The method of claim 13 , wherein the diffraction analysis comprises nano beam diffraction analysis, the sample comprises a transmission electron microscopy (TEM) sample, the removing of the surface portion comprises milling the prepared sample, and the performing of the NBD analysis comprises using a strain analyzer to perform the NBD analysis.
15. The method of claim 14 , wherein the NBD analysis is performed on the milled sample to acquire diffraction data.
16. The method of claim 15 , wherein the milling of the TEM sample exposes the underlying surface of the TEM sample, and the strain analyzer uses a TEM camera image resolution of at least 4000 ×4000 pixels to acquire the diffraction data on the underlying surface.
17. The method of claim 15 , wherein the preparing of the TEM sample is performed by using a focused ion beam (FIB) device, the milling of the TEM sample is performed by using a broad beam ion mill, and the surface portion comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.
18. The method of claim 17 , wherein the milling of the TEM sample is performed by a broad beam ion mill which is operated at a current in a range from 120 μA to 150 μ and a voltage in a range from 500 eV to 900 eV and utilizes an argon ion beam having a size in a range from 0.5 μm to 1.5 μm, and
wherein the TEM sample comprises a parallel-sided sample, and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.